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16 Jul 2001

Volume 79, Issue 3, pp. 281-445

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Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

M. L. Ostraat, J. W. De Blauwe, M. L. Green, L. D. Bell, M. L. Brongersma, J. Casperson, R. C. Flagan, and H. A. Atwater

Appl. Phys. Lett. 79, 433 (2001); http://dx.doi.org/10.1063/1.1385190 (3 pages) | Cited 71 times

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This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 μm channel lengths exhibit large threshold voltage shifts (>3 V), submicrosecond program times, millisecond erase times, excellent endurance (>105 program/erase cycles), and long-term nonvolatility (>106 s) despite thin tunnel oxides (55–60 Å). In addition, a simple aerosol fabrication and deposition process makes the aerosol nanocrystal memory device an attractive candidate for low-cost nonvolatile memory applications. © 2001 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
81.07.Bc Nanocrystalline materials
73.63.Bd Nanocrystalline materials
84.30.Sk Pulse and digital circuits
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Low-noise 1 THz superconductor–insulator–superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit

B. D. Jackson, A. M. Baryshev, G. de Lange, J.-R. Gao, S. V. Shitov, N. N. Iosad, and T. M. Klapwijk

Appl. Phys. Lett. 79, 436 (2001); http://dx.doi.org/10.1063/1.1384005 (3 pages) | Cited 18 times

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Low-noise heterodyne mixing at 1 THz is demonstrated in a quasioptical mixer incorporating Nb superconductor–insulator–superconductor tunnel junctions and a NbTiN/SiO2/Al tuning circuit. Receiver noise temperatures as low as 250 K at 850 GHz, 315 K at 980 GHz, and 405 K at 1015 GHz are measured—a factor of 2 improvement in sensitivity versus state-of-the-art 1 THz receivers, which incorporate normal metal tuning circuits. An analysis of the receiver sensitivity at 980 GHz demonstrates that NbTiN is low loss up to ∼1 THz. © 2001 American Institute of Physics.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
95.55.Jz Radio telescopes and instrumentation; heterodyne receivers
85.25.Cp Josephson devices
84.40.Dc Microwave circuits
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