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16 Jul 2001

Volume 79, Issue 3, pp. 281-445

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Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi3Ti3O12−δ thin films

Kazumi Kato, Kazuyuki Suzuki, Kaori Nishizawa, and Takeshi Miki

Appl. Phys. Lett. 79, 397 (2001); http://dx.doi.org/10.1063/1.1385195 (3 pages) | Cited 3 times

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Thin films of a bismuth-based layer-structured perovskite compound with a number of oxygen octahedron along the c axis between Bi–O layers of three, CaBi3Ti3O12−δ, were prepared using a mixture solution of complex alkoxides. The films crystallized below 550 °C. The crystal structure and surface morphology of these films changed between 600 and 650 °C. The 650 °C-annealed thin film consisted of well-developed grains and exhibited polarization–electric hysteresis loops. The remanent polarization and coercive electric field were 8.5 μC/cm2 and 124 kV/cm, respectively, at 7 V. The dielectric constant and loss factor were about 250 and 0.048, respectively, at 100 kHz. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
61.66.Fn Inorganic compounds
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
68.55.-a Thin film structure and morphology

Universal phase diagram for high-piezoelectric perovskite systems

D. E. Cox, B. Noheda, G. Shirane, Y. Uesu, K. Fujishiro, and Y. Yamada

Appl. Phys. Lett. 79, 400 (2001); http://dx.doi.org/10.1063/1.1384475 (3 pages) | Cited 125 times

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Strong piezoelectricity in perovskite-type PbZn1−xTixO3 (PZT) and Pb(Zn1/3Nb2/3)O3–PbTiO3 (PZN–PT) systems is generally associated with the existence of a morphotropic phase boundary (MPB) separating regions with rhombohedral and tetragonal symmetry. An x-ray study of PZN–9% PT has revealed the presence of an orthorhombic phase at the MPB, and a near-vertical boundary between the rhombohedral and orthorhombic phases, similar to that found for PZT between the rhombohedral and monoclinic phases. We discuss the results in the light of a recent theoretical paper by Vanderbilt and Cohen [Phys. Rev. B 63, 94108 (2001)], which attributes these low-symmetry phases to the high anharmonicity in these oxide systems. © 2001 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
81.30.Dz Phase diagrams of other materials
77.80.B- Phase transitions and Curie point
63.20.Ry Anharmonic lattice modes
64.70.K- Solid-solid transitions

Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

E. Rokuta, Y. Hotta, T. Kubota, H. Tabata, H. Kobayashi, and T. Kawai

Appl. Phys. Lett. 79, 403 (2001); http://dx.doi.org/10.1063/1.1385799 (3 pages) | Cited 7 times

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Electrical properties of ferroelectric Bi4Ti3O12 (BiT) films on Si(100) using a 1 nm thick silicon oxynitride (SiON) buffer were investigated. The capacitance–voltage (C–V) characteristics of Au/BiT/SiON/Si(100) exhibited hysteresis loops with a memory window of 2 V due to the ferroelectricity, and did not show large carrier injections. The effects of the SiON buffer were demonstrated in current–voltage characteristics. In the reverse bias region, a leakage current density of the specimen without the SiON buffer was much larger than that of the specimen with the buffer. Apart from these electrical measurements, anomalous features appeared in C–V characteristics of the illuminated specimen, which were likely to be due to the ac response of the optically generated electrons in some trap states at the interface. © 2001 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
73.61.Ng Insulators
77.80.Dj Domain structure; hysteresis
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Size distribution of a metallic polydispersion through capacitive measurements in a sedimentation experiment

E. Salazar-Neumann, Y. Nahmad-Molinari, J. C. Ruiz-Suárez, P.-L. Ardisson, C. A. Arancibia-Bulnes, and R. Rechtman

Appl. Phys. Lett. 79, 406 (2001); http://dx.doi.org/10.1063/1.1386404 (3 pages) | Cited 1 time

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We present a simple experimental technique to determine size distributions of metallic polydispersions. The particles are first suspended in a viscous fluid-like glycerol and then their sedimentation is followed by measuring the effective dielectric constant in a cylindrical cell at a fixed frequency. Thereafter, an inversion procedure of the data, based on the Maxwell–Garnett effective medium theory and Stokes law, is used to directly obtain the size distribution. The technique is applied to three different stainless steel dispersions and compares very well with a traditional sizing method based in microphotography. © 2001 American Institute of Physics.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
82.70.Kj Emulsions and suspensions
77.22.Ch Permittivity (dielectric function)
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