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16 Jul 2001

Volume 79, Issue 3, pp. 281-445

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Structural and ferromagnetic resonance characteristics of BaFe12O19 films with minimal linewidths

L. V. Saraf, S. E. Lofland, Arthur V. Cresce, S. M. Bhagat, and R. Ramesh

Appl. Phys. Lett. 79, 385 (2001); http://dx.doi.org/10.1063/1.1385348 (3 pages) | Cited 7 times

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Hexagonal barium ferrite films with thickness between 0.3 and 8 μm were deposited on (0001) oriented Al2O3 using pulsed laser deposition and optimized growth and annealing conditions. They were characterized by measurements of x-ray diffraction, Rutherford backscattering, magnetization, atomic force microscopy and ferromagnetic resonance (FMR) at 58 GHz. The narrowest FMR lines and largest number of spin wave resonances are obtained when the field is perpendicular to the film plane of 0.3 and 0.46 μm films. To quantitatively account for variations with field angle (θ) we assume (i) a strain-induced anisotropy energy with cos4 θ dependence and (ii) that the film should be pictured as a mosaic whose tiles are tilted out of the film plane. © 2001 American Institute of Physics.
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75.50.Gg Ferrimagnetics
75.70.Ak Magnetic properties of monolayers and thin films
68.55.-a Thin film structure and morphology
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
81.15.Fg Pulsed laser ablation deposition
75.30.Gw Magnetic anisotropy

Chemical-pressure tailoring of low-field, room-temperature magnetoresistance in (Ca, Sr, Ba)Fe0.5Mo0.5O3

Bog-Gi Kim, Yew-San Hor, and S-W. Cheong

Appl. Phys. Lett. 79, 388 (2001); http://dx.doi.org/10.1063/1.1386617 (3 pages) | Cited 25 times

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Low-field intergrain magnetoresistance (IMR) in the polycrystalline materials of double perovskite SrFe0.5Mo0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The room-temperature IMR at optimal doping (Sr0.2Ba0.8Fe0.5Mo0.5O3) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented magnitude of the IMR in this highly spin polarized system provides future grounds for employing magnetic materials for innovative magnetic technology. © 2001 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.47.Gk Colossal magnetoresistance
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order

Atomic-scale characterization of a Co/AlOx/Co magnetic tunnel junction by scanning transmission electron microscopy

M. J. Plisch, J. L. Chang, J. Silcox, and R. A. Buhrman

Appl. Phys. Lett. 79, 391 (2001); http://dx.doi.org/10.1063/1.1383569 (3 pages) | Cited 17 times

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Analytical electron microscopy has been employed to characterize the localized physical and electronic structure of a Co/AlOx/Co magnetic tunnel junction. The tunnel barrier is amorphous alumina with an extensive conduction band tail due to disorder. Both barrier edges are Al terminated and an Al-rich layer exists at the bottom Co/AlOx interface. sp-d hybridization between interfacial Co and Al atoms is observed and it is likely that the interfacial Al is metallic. All of these features are expected to be important to the magnetoresistance behavior of the junction. © 2001 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.20.At Surface states, band structure, electron density of states
73.40.Gk Tunneling
68.35.Fx Diffusion; interface formation
75.50.Cc Other ferromagnetic metals and alloys

Superconducting Mg–B films by pulsed-laser deposition in an in situ two-step process using multicomponent targets

Dave H. A. Blank, Hans Hilgenkamp, Alexander Brinkman, Dragana Mijatovic, Guus Rijnders, and Horst Rogalla

Appl. Phys. Lett. 79, 394 (2001); http://dx.doi.org/10.1063/1.1385345 (3 pages) | Cited 64 times

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Superconducting thin films have been prepared in an insitu two-step process, using the Mg–B plasma generated by pulsed-laser ablation. The target was composed of a mixture of Mg and MgB2 powders to compensate for the volatility of Mg and, therefore, to ensure a high Mg content in the film. The films were deposited at temperatures ranging from room temperature to 300 °C followed by a low-pressure insitu annealing procedure. Various substrates have been used and diverse ways to increase the Mg content into the film were applied. The films show a sharp transition in the resistance and have a zero resistance transition temperature of 22–24 K. © 2001 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.15.Fg Pulsed laser ablation deposition
74.10.+v Occurrence, potential candidates
61.72.Cc Kinetics of defect formation and annealing
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