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16 Jul 2001

Volume 79, Issue 3, pp. 281-445

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Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication

C. T. Black, K. W. Guarini, K. R. Milkove, S. M. Baker, T. P. Russell, and M. T. Tuominen

Appl. Phys. Lett. 79, 409 (2001); http://dx.doi.org/10.1063/1.1383805 (3 pages) | Cited 130 times

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We combine a self-organizing diblock copolymer system with semiconductor processing to produce silicon capacitors with increased charge storage capacity over planar structures. Our process uses a diblock copolymer thin film as a mask for dry etching to roughen a silicon surface on a 30 nm length scale, which is well below photolithographic resolution limits. Electron microscopy correlates measured capacitance values with silicon etch depth, and the data agree well with a geometric estimate. This block copolymer nanotemplating process is compatible with standard semiconductor processing techniques and is scalable to large wafer dimensions. © 2001 American Institute of Physics.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.16.Dn Self-assembly
84.32.Tt Capacitors
81.65.Cf Surface cleaning, etching, patterning

Direct observation of icosahedral cluster in Zr70Pd30 binary glassy alloy

Junji Saida, Mitsuhide Matsushita, and Akihisa Inoue

Appl. Phys. Lett. 79, 412 (2001); http://dx.doi.org/10.1063/1.1385802 (3 pages) | Cited 47 times

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The medium-range order in the Zr70Pd30 binary glassy alloy, where the nanoicosahedral phase precipitates as a primary phase, was examined using the high-resolution electron microscopic technique. The ordered region in the diameter of ∼ 2 nm was observed in the as-quenched glassy state. This region grows slightly to the diameter of 3–4 nm by annealing for 120 s at 690 K, where the amorphous structure remains. The nanobeam electron diffraction pattern taken from the medium-range order shows the fivefold symmetry, indicating that this region has the icosahedral structure. This result is recognized as a direct evidence for the existence of the icosahedral cluster in the alloy. For further annealing for 600 s at 690 K, the icosahedral quasicrystalline phase in the diameter of 5–8 nm precipitates by assimilating the icosahedral cluster. The formation of the nanoicosahedral phase originates from the existence of the quenched-in icosahedral clusters in the glassy state followed by their easy growth to the icosahedral particle without significant rearrangement of the constitutional elements. © 2001 American Institute of Physics.
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61.44.Br Quasicrystals
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
64.70.Nd Structural transitions in nanoscale materials
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
61.05.J- Electron diffraction and scattering
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation

Unique morphologies of boron nitride nanotubes

D. Golberg and Y. Bando

Appl. Phys. Lett. 79, 415 (2001); http://dx.doi.org/10.1063/1.1385188 (3 pages) | Cited 33 times

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Unusual morphological features of boron nitride nanotubes produced via metal–oxide-promoted high-temperature syntheses from carbon nanotubes, boron oxide, and nitrogen were observed using high-resolution transmission electron microscopy. The tubes normally displayed open ends and preferentially two or four tubular layers as revealed by statistical analysis of 600 nanotubes. In addition, the total amount of tubes with even number of shells (61% occurrence) markedly prevailed over that with odd number of shells (39%). All three characteristics are exceptional for BN compared to other layered materials which may be assembled in tubules. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials

High electric field transport in modulation-doped InAs self-assembled quantum dots for high-frequency applications

Hee Seok Park and Vladimir G. Mokerov

Appl. Phys. Lett. 79, 418 (2001); http://dx.doi.org/10.1063/1.1378799 (3 pages) | Cited 1 time

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Modulation-doped N–AlGaAs (GaAs/InAs/GaAs/InAs)/GaAs-heterostructures with InAs-quantum dots (QDs) have been grown and investigated. Using these structures, modulation-doped field-effect transistors (MODFETs) have been fabricated and analyzed. It has been observed that they have the anomalous two-step shape in the current–voltage curve in contrast to the conventional curve with saturation. The saturation current Idss for the second step practically does not depend on the gate bias UG, showing that the concentration of electrons participating in the current flow becomes independent of UG. It has been demonstrated that the QD-MODFETs present a promising type of the hot electron devices for high frequency applications. © 2001 American Institute of Physics.
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73.63.Kv Quantum dots
73.50.Fq High-field and nonlinear effects
85.30.Tv Field effect devices

High-detectivity, normal-incidence, mid-infrared (λ ∼ 4 μm)InAs/GaAs quantum-dot detector operating at 150 K

A. D. Stiff, S. Krishna, P. Bhattacharya, and S. Kennerly

Appl. Phys. Lett. 79, 421 (2001); http://dx.doi.org/10.1063/1.1385584 (3 pages) | Cited 53 times

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Normal-incidence InAs/GaAs quantum-dot detectors have been grown, fabricated, and characterized for mid-infrared detection in the temperature range from 78 to 150 K. Due to the presence of an Al0.3Ga0.7As current blocking layer in the heterostructure, the dark current is very low, and at T = 100 K, Idark = 1.7 pA for Vbias = 0.1 V. The peak of the spectral response curve is at λ ∼ 4 μm, with Δλ/λ = 0.3 and Vbias = 0.1 V. At T = 100 K, for Vbias = 0.3 V, the peak detectivity, D∗, is 3×109 cm Hz1/2/W, and the peak responsivity, Rp, is 2 mA/W with a photoconductive gain of g = 18. © 2001 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Ey III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Nano-oxidation of silicon surfaces: Comparison of noncontact and contact atomic-force microscopy methods

Marta Tello and Ricardo García

Appl. Phys. Lett. 79, 424 (2001); http://dx.doi.org/10.1063/1.1385582 (3 pages) | Cited 47 times

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Local oxidation lithography by atomic-force microscopy is emerging as a powerful method for nanometer-scale patterning of surfaces. Here, we perform a comparative study of contact and noncontact atomic-force microscopy (AFM) oxidation experiments. The comparison of height and width dependencies on voltage and pulse duration allows establishing noncontact AFM as the optimum local oxidation method. For the same electrical conditions, noncontact AFM oxides exhibit higher aspect ratios (0.04 vs 0.02). The smallness of the liquid meniscus in noncontact AFM oxidation produces smaller oxide widths. We also report a slower oxidation rate in contact AFM oxidation. We explain this result by introducing an effective energy barrier (∼0.14 eV) that includes the mechanical work done by the growing oxide against the cantilever (∼0.01 eV). © 2001 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.16.Pr Micro- and nano-oxidation
81.65.Mq Oxidation
81.16.Nd Micro- and nanolithography

Transport characteristics of electrons in weak short-period two-dimensional potential arrays

A. Kawaharazuka, T. Saku, Y. Tokura, Y. Horikoshi, and Y. Hirayama

Appl. Phys. Lett. 79, 427 (2001); http://dx.doi.org/10.1063/1.1386621 (3 pages)

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We study the transport characteristics of electrons in weak short-period two-dimensional potential arrays formed on a back-gated undoped GaAs/AlGaAs heterostructure with a shallow channel. The period of the potential is as short as 50 nm. We achieve the condition where the unit cell is filled by less than one electron. In addition to the conventional magnetoresistance characteristics, we have found a feature that is determined solely by electron density. This feature reflects the strong Coulomb interaction between the electrons confined in the potential arrays. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures

O. Y. Raisky, W. B. Wang, R. R. Alfano, and C. L. Reynolds

Appl. Phys. Lett. 79, 430 (2001); http://dx.doi.org/10.1063/1.1386402 (3 pages) | Cited 5 times

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Room temperature photoluminescence of p–i–n InGaAsP/InP multiple quantum well heterostructures was investigated under different excitation intensities. Photoluminescence spectra show the effect of phase space filling in quantum wells with increasing excitation density. Bias dependence of photoluminescence clearly demonstrates field screening that occurs inside the undoped layer. Device simulation is used to explain the observed phenomena. © 2001 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.De Quantum wells
85.60.Dw Photodiodes; phototransistors; photoresistors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Hs Quantum wells
73.50.Pz Photoconduction and photovoltaic effects
85.30.De Semiconductor-device characterization, design, and modeling
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