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16 Jul 2001

Volume 79, Issue 3, pp. 281-445

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Infrared properties of room-temperature-deposited ZrO2

L. Koltunski and R. A. B. Devine

Appl. Phys. Lett. 79, 320 (2001); http://dx.doi.org/10.1063/1.1384476 (3 pages) | Cited 11 times

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ZrO2 films have been deposited at room temperature using Zr(OC4H9)4 and O2 source gases in a low-pressure electron-cyclotron-resonance-excited plasma reactor. The deposited films were, in general, mixed (amorphous and polycrystalline; monoclinic or tetragonal), the crystallinity depending upon the substrate polarization during deposition and the postdeposition annealing. Infrared vibrational modes of the films have been characterized. In as-deposited films, the dielectric constants were ∼12–18, dependent upon sample bias during deposition, and the refractive indices were ∼1.85–1.92. © 2001 American Institute of Physics.
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78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
77.55.-g Dielectric thin films
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
63.20.-e Phonons in crystal lattices

Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC

P. Jamet and S. Dimitrijev

Appl. Phys. Lett. 79, 323 (2001); http://dx.doi.org/10.1063/1.1385181 (3 pages) | Cited 45 times

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N2O and NO nitridation by either annealing or direct growth of gate oxides on 4H SiC is analyzed in this letter. The analysis is based on x-ray photoelectron spectroscopy binding energies and secondary ion mass spectroscopy depth profiles of nitrogen at the SiO2–SiC interface. A clean SiO2–SiC interface is found in both NO and N2O annealed/grown samples, as opposed to the interface annealed in Ar which exhibits complex suboxides and oxide–carbon compounds. The results demonstrate that nitridation in the industry-preferred N2O ambient could be as effective as nitridation in NO, provided appropriate process optimization is performed. © 2001 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
79.60.Jv Interfaces; heterostructures; nanostructures

Room temperature persistent spectral hole burning in x-ray irradiated Eu3+-doped borate glasses

Woon Jin Chung and Jong Heo

Appl. Phys. Lett. 79, 326 (2001); http://dx.doi.org/10.1063/1.1385346 (3 pages) | Cited 9 times

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Irradiation of x-rays has induced room-temperature persistent spectral hole burning (PSHB) in Eu3+-doped borate glasses melted under an inert atmosphere. Defects were formed by x-ray irradiation and these defects, especially electron trapping centers near rare-earth ions in glasses, were responsible for the PSHB. Electrons were released from these defects upon irradiation of a burning light. Photoreduction of Eu3+ to Eu2+ by trapping these electrons resulted in the formation of persistent spectral holes. © 2001 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
61.43.Fs Glasses
61.80.Cb X-ray effects
61.82.Ms Insulators
82.50.-m Photochemistry

Friction and wear characteristics of ceramic nanocomposite coatings: Titanium carbide/amorphous hydrocarbon

D. M. Cao, B. Feng, W. J. Meng, L. E. Rehn, P. M. Baldo, and M. M. Khonsari

Appl. Phys. Lett. 79, 329 (2001); http://dx.doi.org/10.1063/1.1384477 (3 pages) | Cited 24 times

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Friction and wear characteristics of titanium-containing amorphous hydrocarbon (Ti–C:H) coatings were measured during unlubricated sliding against WC–Co. These Ti–C:H coatings consist of nanocrystalline TiC clusters embedded in an amorphous hydrocarbon (a-C:H) matrix, i.e., they are TiC/a-C:H nanocomposites. The elastic modulus and hardness of the coatings exhibit smooth variations with increasing Ti composition. In contrast, a relatively abrupt transition occurs in the friction coefficient and wear rate of the coatings over a relatively narrow (20–30 at. %) Ti composition range. Our results reveal bimodal friction and wear behaviors for the TiC/a-C:H nanocomposites, a-C:H like at Ti compositions below 20%, and TiC like at Ti compositions above 30%. The two different wear mechanisms that operate as the volume fraction of nanocrystalline TiC clusters changes are discussed. © 2001 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
62.20.Qp Friction, tribology, and hardness
81.40.Pq Friction, lubrication, and wear
61.46.-w Structure of nanoscale materials
62.20.D- Elasticity

Thermal diffusivity in amorphous silicon carbon nitride thin films by the traveling wave technique

S. Chattopadhyay, L. C. Chen, C. T. Wu, K. H. Chen, J. S. Wu, Y. F. Chen, G. Lehmann, and P. Hess

Appl. Phys. Lett. 79, 332 (2001); http://dx.doi.org/10.1063/1.1386619 (3 pages) | Cited 8 times

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Thermal diffusivity (α) of amorphous silicon carbon nitride (a-SiCxNy) thin films on crystalline silicon, prepared by ion beam sputtering, has been studied using the traveling wave technique. The variation of thermal diffusivity with carbon content in amorphous silicon carbon nitride samples are reported. Thermal diffusivity decreased from ∼ 0.35 cm2/s for samples with carbon contents of less than 30 at. %, to about 0.15 cm2/s for a-SiCxNy films with a carbon content of ∼ 70 at. %. A similar variation was found for the film density as measured by surface acoustic wave spectroscopy as a function of the carbon content. The results on a-SiCxNy, elucidate the relation between thermal diffusivity and the bonding configuration, density and microstructure of the network. © 2001 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.55.A- Nucleation and growth
61.43.Dq Amorphous semiconductors, metals, and alloys
68.60.Dv Thermal stability; thermal effects

Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface

E. A. Stach and R. Hull

Appl. Phys. Lett. 79, 335 (2001); http://dx.doi.org/10.1063/1.1384904 (3 pages) | Cited 4 times

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Experiments have shown that a native oxide layer on the surface of a strained SiGe epilayer causes an order of magnitude increase in dislocation velocities during annealing over those observed in atomically clean samples and during crystal growth [E. A. Stach, R. Hull, R. M. Tromp, M. C. Reuter, M. Copel, F. K. LeGoues, and J. C. Bean, J. Appl. Phys. 83, 1931 (1998)]. This behavior is explained herein by stress-assisted dislocation kink nucleation at the oxide/epilayer interface. Finite element models are used to estimate the stress local to steps at this interface due to both intrinsic and thermal expansion stresses, and dislocation theory is used to determine the resulting increase in single kink nucleation. © 2001 American Institute of Physics.
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68.35.Ct Interface structure and roughness
65.40.De Thermal expansion; thermomechanical effects
02.70.Dh Finite-element and Galerkin methods
61.72.Cc Kinetics of defect formation and annealing
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Bb Theories and models of crystal defects
61.72.Lk Linear defects: dislocations, disclinations

Local structure of implanted B in amorphous Si

F. Mai, B. Ittermann, M. Füllgrabe, M. Heemeier, F. Kroll, K. Marbach, P. Meier, H. Mell, D. Peters, H. Thieß, H. Ackermann, and H.-J. Stöckmann

Appl. Phys. Lett. 79, 338 (2001); http://dx.doi.org/10.1063/1.1384482 (3 pages) | Cited 1 time

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12B probe nuclei are implanted in amorphous Si and monitored by β-radiation-detected nuclear magnetic resonance (β-NMR). Independently of growth conditions and impurity content, we find the same frequency distribution in a variety of samples. This is interpreted as an intrinsic signature of the amorphous environment while preferential B–H pairing is not observed. Comparing our data with earlier 11B-NMR work, we find the local B configuration to be completely controlled by the incorporation process. In our low-dose implantation experiment, all B is fourfold coordinated and electrically active. This is in contrast to gas-phase doping or high-dose implantation where the threefold coordination prevails. © 2001 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
81.05.Gc Amorphous semiconductors
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)
76.60.-k Nuclear magnetic resonance and relaxation
81.05.Cy Elemental semiconductors

Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu, Takashi Azuhata, Takayuki Sota, and Takashi Mukai

Appl. Phys. Lett. 79, 341 (2001); http://dx.doi.org/10.1063/1.1385583 (3 pages) | Cited 11 times

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An InGaN multiple-quantum-well laser diode wafer that lased at 400 nm was shown to have InN mole fraction x of only 6% and 2% in the wells and barriers, respectively. The Stokes-like shift (SS) and localization depth E0 were estimated to be 49 and 35 meV at 300 K although the compositional fluctuation in the well was as small as 1% or less. Since the well thickness fluctuation is insufficient to reproduce the SS or E0, the quantum-well exciton localization is considered to be an intrinsic phenomenon in InGaN, which is due to the large band-gap bowing and In clustering. The spontaneous emission was thus assigned as being due to the recombination of excitons localized at the exponential tail-type potential minima in the density of states. However, shallow and low-density localized states are leveled by injecting high-density carriers under the lasing conditions. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Fabrication of strain-balanced Si/Si1−xGex multiple quantum wells on Si1−yGey virtual substrates and their optical properties

K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton, and G. Parry

Appl. Phys. Lett. 79, 344 (2001); http://dx.doi.org/10.1063/1.1387263 (3 pages) | Cited 2 times

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Strain-balanced Si/SiGe multiple quantum wells (MQWs), which are designed to overcome the limitation of the number of wells coming from the strain accumulation, were fabricated, and their optical properties were investigated. X-ray diffraction spectra and cross-sectional transmission-electron-microscope images showed a high-crystalline quality of samples and excellent uniformity of the well width. Well-resolved no-phonon and TO-phonon-assisted transitions from strain-balanced MQWs were observed by low-temperature photoluminescence spectroscopy, and both their temperature and excitation power dependence showed blueshifts due to the delocalization of excitons, the band bending, and/or the band-filling effect. © 2001 American Institute of Physics.
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81.07.St Quantum wells
78.67.De Quantum wells
73.21.Fg Quantum wells
68.65.Fg Quantum wells
78.55.Hx Other solid inorganic materials
71.35.Gg Exciton-mediated interactions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition

C. R. Stoldt, M. C. Fritz, C. Carraro, and R. Maboudian

Appl. Phys. Lett. 79, 347 (2001); http://dx.doi.org/10.1063/1.1383277 (3 pages) | Cited 17 times

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1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for silicon-carbide films deposited using conventional dual-source chemical-vapor deposition. Additionally, we comment on the feasibility of integrating this process into the fabrication technology for microelectromechanical systems. © 2001 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
68.55.A- Nucleation and growth
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Magnetochromatics of the magnetic fluid film under a dynamic magnetic field

Herng-Er Horng, S. Y. Yang, S. L. Lee, Chin-Yih Hong, and H. C. Yang

Appl. Phys. Lett. 79, 350 (2001); http://dx.doi.org/10.1063/1.1385796 (3 pages) | Cited 33 times

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The structure and the corresponding magnetochromatics of homogeneous magnetic fluid films under dynamic magnetic fields perpendicular to the film surfaces are investigated in this letter. During the application of a magnetic field from 0 up to 200 Oe, the structure in the magnetic fluid film evolves from a monodispersed state to a disordered-column state, and then to an ordered hexagonal structure. The column spacing for the instant hexagonal structure during the dynamic process was measured and found to vary from 2.41 to 1.83 μm when the field strength was raised from 60 to 200 Oe. Within this range, the hexagonal structure diffracts the visible light like an optical grating. Due to the dynamic variation of the column spacing with the increasing field strength, the color of the diffracted light changed unceasingly from red to blue when observed from a fixed point above the film. The results strongly suggest the possibility that optical devices may be developed by utilizing the magnetochromatics of magnetic fluid films under dynamic magnetic fields. © 2001 American Institute of Physics.
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78.20.Ls Magneto-optical effects
75.50.Mm Magnetic liquids
78.66.-w Optical properties of specific thin films
68.15.+e Liquid thin films
75.70.Ak Magnetic properties of monolayers and thin films
61.25.-f Studies of specific liquid structures
42.25.Fx Diffraction and scattering
42.79.Dj Gratings
42.79.Wc Optical coatings

On the mechanism of the cubic phase formation in the boron nitride thin-film systems

Sakhrat Khizroev and Dmitri Litvinov

Appl. Phys. Lett. 79, 353 (2001); http://dx.doi.org/10.1063/1.1386403 (3 pages) | Cited 5 times

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This work addresses the issue of cubic phase formation in boron nitride thin-film systems. The presented data suggest strain-induced formation of cubic phase. The compliant nature of the turbostratic boron nitride buffer layer is shown to be an essential factor for cubic phase nucleation. Two distinct regimes of cubic phase formation are observed. First, a cubic boron nitride seed layer is formed on top of the turbostratic boron nitride buffer layer under nitrogen ion irradiation of the growth surface. This is followed by the growth mode of the cubic phase, which requires a different set of growth conditions. The role of nitrogen ion irradiation in two deposition regimes is discussed. © 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
81.05.Ea III-V semiconductors
81.15.Cd Deposition by sputtering

Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si

W. Barvosa-Carter and M. J. Aziz

Appl. Phys. Lett. 79, 356 (2001); http://dx.doi.org/10.1063/1.1386399 (3 pages) | Cited 15 times

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The effect of externally applied in-phase stresses on the solid-phase epitaxial growth rate of both intrinsic and B-doped Si has been measured using time-resolved reflectivity. The data are described phenomenologically by a product of a function of concentration, an Arrhenius function of temperature, and a Boltzmann factor in the product of the stress and the activation strain V∗, with V11∗ = (+0.14±0.04) and (+0.17±0.02) times the atomic volume, in intrinsic and B-doped material, respectively. © 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
68.60.Bs Mechanical and acoustical properties
78.66.Db Elemental semiconductors and insulators
81.15.Np Solid phase epitaxy; growth from solid phases
81.05.Cy Elemental semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Mechanism of electron trapping in Ge-doped SiO2 glass

T. Uchino, M. Takahashi, and T. Yoko

Appl. Phys. Lett. 79, 359 (2001); http://dx.doi.org/10.1063/1.1383273 (3 pages) | Cited 7 times

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We present a possible mechanism of electron trapping in Ge-doped SiO2 glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called “Ge(1) and Ge(2)” centers are distinctly different electron centers rather than GeO4− variants and that an electron trapped at an oxygen vacancy site is a promising candidate for Ge(2). © 2001 American Institute of Physics.
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71.55.Jv Disordered structures; amorphous and glassy solids
61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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