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23 Jul 2001

Volume 79, Issue 4, pp. 449-553

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Ion-irradiation-induced mixing, interface broadening and period dilation in Pt/C multilayers

S. K. Ghose, D. K. Goswami, B. Rout, B. N. Dev, G. Kuri, and G. Materlik

Appl. Phys. Lett. 79, 467 (2001); http://dx.doi.org/10.1063/1.1384901 (3 pages) | Cited 9 times

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Pt/C multilayers of nanometric dimension have been irradiated with 2-MeV-Au ions to a fluence of 1×1014 ions/cm2 and analyzed by x-ray reflectivity and x-ray standing wave measurements. The multilayer period has expanded by ∼9%, the expansion of the Pt layers being larger than that of the C layers. Ion-induced displacement of atoms across the interfaces led to an increased interface roughness and an increase of 2 at. % Pt in C layers. Monte Carlo simulations for ion-induced atomic displacement have been used to explain the observed effects. © 2001 American Institute of Physics.
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68.65.Ac Multilayers
61.80.Jh Ion radiation effects
64.75.-g Phase equilibria
68.35.Ct Interface structure and roughness
68.49.Uv X-ray standing waves
61.82.Rx Nanocrystalline materials

Single-crystalline rocksalt CdO layers grown on GaAs (001) substrates by metalorganic molecular-beam epitaxy

A. B. M. A. Ashrafi, H. Kumano, I. Suemune, Y.-W. Ok, and T.-Y. Seong

Appl. Phys. Lett. 79, 470 (2001); http://dx.doi.org/10.1063/1.1387258 (3 pages) | Cited 11 times

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In this letter, we report the growth of single-crystalline rocksalt CdO layers on (001) GaAs substrates using ZnS buffer layers. The growth processes of CdO layers were studied by reflection high-energy electron diffraction (RHEED), and the grown CdO layers were evaluated with atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements. After an initial growth delay, the formation of polycrystalline CdO was observed in RHEED measurements during the initial growth of very thin CdO layers. With the increase of the CdO layer thicknesses, streaky RHEED patterns were observed, which indicate the formation of single-crystalline cubic-phase CdO layers. Surface morphology of the CdO layers observed by AFM was atomically flat with root-mean-square roughness of ∼ 1 nm. The crystalline structures were elucidated from XRD measurements by the determination of the lattice constant to be 4.686±0.001 Å, indicating the single-phase rocksalt CdO structure. © 2001 American Institute of Physics.
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81.05.Dz II-VI semiconductors
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.47.Gh Oxide surfaces

Determination of the dispersion of the index of refraction and the elastic moduli for molecular-beam-epitaxy-grown Zn1−xBexSe alloys

F. C. Peiris, U. Bindley, J. K. Furdyna, Hyunjung Kim, A. K. Ramdas, and M. Grimsditch

Appl. Phys. Lett. 79, 473 (2001); http://dx.doi.org/10.1063/1.1379356 (3 pages) | Cited 7 times

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The prism coupler technique, together with reflectivity channeled spectra, were used to determine the dispersion of the indices of refraction for a series of ternary alloys of Zn1−xBexSe grown by molecular-beam epitaxy on GaAs substrates. The measurements covered the wavelength range of 400–1300 nm, and the entire Be concentration range, from x = 0 to 1.00. The availability of accurate values of the index-of-refraction then enabled us to determine the elastic moduli c11 for the Zn1−xBexSe and its dependence on the Be concentration x from frequency shifts in Brillouin scattering spectra observed on the epilayers of these ternary alloys. The c11 results clearly indicate that the bonding in Zn1−xBexSe becomes more robust as the Be concentration increases. © 2001 American Institute of Physics.
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78.66.Hf II-VI semiconductors
62.20.D- Elasticity
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.55.-a Thin film structure and morphology
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates

K. Kawaguchi, S. Koh, Y. Shiraki, and J. Zhang

Appl. Phys. Lett. 79, 476 (2001); http://dx.doi.org/10.1063/1.1385196 (3 pages) | Cited 4 times

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Strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors (DBRs) which were designed to overcome the limitation of the number of pairs originating from the strain accumulation were fabricated. Raman spectra of Si0.73Ge0.27/Si DBRs with 11 and 25 mirror pairs showed that SiGe and Si layers were under compressive and tensile strain on SiGe virtual substrates as designed. A record reflectivity of 80% was achieved at 1.44 μm in SiGe/Si DBRs with 25 pairs. The surface roughness of the 25 pair sample, however, was increased to about 46 nm compared with 6.3 nm of the 11 pair sample. © 2001 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.67.De Quantum wells
68.65.Ac Multilayers
42.79.Wc Optical coatings
42.15.Eq Optical system design
78.30.Hv Other nonmetallic inorganics

Ti3SiC2 and ice

M. W. Barsoum, M. Radovic, P. Finkel, and T. El-Raghy

Appl. Phys. Lett. 79, 479 (2001); http://dx.doi.org/10.1063/1.1384479 (3 pages) | Cited 25 times

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Despite vast differences in their other properties, the responses of Ti3SiC2 and ice to stress are quite similar in that they are quite strain-rate sensitive; if loaded rapidly, both are brittle, but if loaded slowly they are quite plastic. This stems from the fact that both are plastically very anisotropic; deformation occurs overwhelmingly, if not exclusively, by slip along basal planes. In both cases, stress concentrations and the rate at which they are relaxed dictate the nature of the mechanical response. In the brittle regime, microcracks and their linkage play a dominant role in both cases. © 2001 American Institute of Physics.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Mm Grain and twin boundaries

Direct correlation between microstructure and mechanical tensile properties in Pb-free solders and eutectic SnPb solder for flip chip technology

J. W. Jang, A. P. De Silva, T. Y. Lee, J. K. Lin, and D. R. Frear

Appl. Phys. Lett. 79, 482 (2001); http://dx.doi.org/10.1063/1.1388160 (3 pages) | Cited 11 times

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The relationship between the microstructure and the mechanical tensile properties of lead-free solders and eutectic SnPb solders is presented for flip chip scale interconnects. Eutectic Sn–37Pb and Sn–0.7Cu solder (in wt %) exhibited a ductile fracture after tensile testing. Eutectic Sn–3.5Ag solder (in wt %) had greater strength and exhibited a brittle fracture at the interface. The different fracture behavior of the lead-free solders was attributed to the grain size and configuration of the intermetallics. Minor additions of alloying elements to the high Sn lead-free solder dramatically affected the microstructure and mechanical properties. © 2001 American Institute of Physics.
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81.20.Vj Joining; welding
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.72.-y Defects and impurities in crystals; microstructure
81.30.Bx Phase diagrams of metals, alloys, and oxides
62.20.M- Structural failure of materials

Local structure of amorphous Zr70Pd30 alloy studied by electron diffraction

T. Takagi, T. Ohkubo, Y. Hirotsu, B. S. Murty, K. Hono, and D. Shindo

Appl. Phys. Lett. 79, 485 (2001); http://dx.doi.org/10.1063/1.1383055 (3 pages) | Cited 55 times

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The structures of melt-spun, and subsequently annealed, Zr70Pd30 alloys, which form a nanosized icosahedral quasicrystalline phase during the primary crystallization of the amorphous phase, have been investigated by means of electron-diffraction pair-distribution-function (PDF) analysis. The PDF analysis for this alloy was performed by precise measurements of elastic halo-electron-diffraction intensities. Possible structure models for as-quenched and annealed amorphous structures were constructed with the help of reverse Monte Carlo simulations. In order to obtain the local atomic structures, the Voronoi-polyhedra analysis was performed. A considerable number of icosahedral clusters with Zr atoms in the center are present in the simulated structure of the as-quenched state, and the number of the clusters increases by annealing. © 2001 American Institute of Physics.
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61.43.Fs Glasses
61.43.Bn Structural modeling: serial-addition models, computer simulation
61.44.Br Quasicrystals

Visible luminescence from a-SiN films doped with Er and Sm

A. R. Zanatta, C. T. M. Ribeiro, and U. Jahn

Appl. Phys. Lett. 79, 488 (2001); http://dx.doi.org/10.1063/1.1389069 (3 pages) | Cited 18 times

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Relatively strong and narrow red and green light emission has been achieved from amorphous (a-) SiN films independently doped with Er3+ and Sm3+ ions. The films were deposited by cosputtering a Si target partially covered with small pieces of metallic Er (and Sm) in an atmosphere of pure nitrogen. As a consequence of the deposition method and conditions, the films have an amorphous structure, and contents of Er (and Sm) in the low 0.5 at. %. All characterizations were accomplished on as-deposited samples and at room temperature and included: ion-beam analysis (Rutherford backscattering spectrometry and nuclear reaction analysis) and optical techniques (light absorption, Raman scattering, and photoluminescence and cathodoluminescence). A detailed examination of the experimental results allowed the identification of all luminescence features existing in the films. © 2001 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
78.60.Hk Cathodoluminescence, ionoluminescence
61.43.Er Other amorphous solids
68.55.-a Thin film structure and morphology
71.55.Jv Disordered structures; amorphous and glassy solids

Optical constants of ice Ih crystal at terahertz frequencies

Chun Zhang, Kwang-Su Lee, X.-C. Zhang, Xing Wei, and Y. R. Shen

Appl. Phys. Lett. 79, 491 (2001); http://dx.doi.org/10.1063/1.1386401 (3 pages) | Cited 9 times

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Terahertz time-domain spectroscopy was used to measure the refractive indices of Ih crystalline ice in the frequency range of 0.25–1.0 THz. With increasing frequency, the real part, n′, of the refractive index increases from 1.787 to 1.793 at 243 K, and the imaginary part, n″, increases from 0.005 to 0.020. The temperature dependence of n′ is less than 0.01%/K and that of n″ is ∼1%/K. Our results connect smoothly to the data of Matsuoka and co-workers [T. Matsuoka, S. Fujita, and S. Mae, J. Appl. Phys. 80, 5884 (1996)] in the microwave range and the data in the far IR range, and can be well described by the existing theoretical models. © 2001 American Institute of Physics.
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78.70.Gq Microwave and radio-frequency interactions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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