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30 Jul 2001

Volume 79, Issue 5, pp. 557-700

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Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon

Lahir Shaik Adam, Mark E. Law, Stanislaw Szpala, P. J. Simpson, Derek Lawther, Omer Dokumaci, and Suri Hegde

Appl. Phys. Lett. 79, 623 (2001); http://dx.doi.org/10.1063/1.1388882 (3 pages) | Cited 9 times

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Nitrogen implantation is commonly used in multigate oxide thickness processing for mixed signal complementary metal-oxide-semiconductor and System on a Chip technologies. Current experiments and diffusion models indicate that upon annealing, implanted nitrogen diffuses towards the surface. The mechanism proposed for nitrogen diffusion is the formation of nitrogen-vacancy complexes in silicon, as indicated by ab initio studies by J. S. Nelson, P. A. Schultz, and A. F. Wright [Appl. Phys. Lett. 73, 247 (1998)]. However, to date, there does not exist any experimental evidence of nitrogen-vacancy formation in silicon. This letter provides experimental evidence through positron annihilation spectroscopy that nitrogen-vacancy complexes indeed form in nitrogen implanted silicon, and compares the experimental results to the ab initio studies, providing qualitative support for the same. © 2001 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
78.70.Bj Positron annihilation
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Carrier diffusion in microcrystalline silicon studied by the picosecond laser induced grating technique

J. Kudrna, F. Trojánek, P. Malý, and I. Pelant

Appl. Phys. Lett. 79, 626 (2001); http://dx.doi.org/10.1063/1.1381418 (3 pages) | Cited 5 times

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We report on the picosecond laser induced grating technique applied to hydrogenated microcrystalline silicon (μc-Si:H) and aimed at studying the photocarrier diffusion coefficient D. We have studied a series of three samples having a distinctly different content of the crystalline phase, and the microstructure and morphology of which are known in detail. Our results show that the coefficient D scales with the degree of crystallinity of the samples, reaching values up to D = 9 cm2 s−1 close to crystalline silicon. The obtained carrier lifetime (≈1 ns) is constant in all measured samples. The extracted diffusion lengths are much greater than the dimensions of the microcrystalline grains in the samples. We conclude that small grain boundaries do not limit substantially the carrier diffusion length in microcrystalline silicon. © 2001 American Institute of Physics.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy

L. Schrottke, R. Hey, and H. T. Grahn

Appl. Phys. Lett. 79, 629 (2001); http://dx.doi.org/10.1063/1.1388873 (3 pages) | Cited 6 times

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We have analyzed the electric-field-dependent subband population as well as the carrier dynamics in a double-quantum-well GaAs/(Al,Ga)As superlattice using time-resolved photoluminescence (PL) spectroscopy. Applying a rate equation model, the steady-state subband population of the majority carriers in the two quantum wells and the transfer coefficients for the minority carriers can be directly determined from measured time-dependent PL spectra. A comparison with results derived from steady-state PL investigations demonstrates that the dynamics of the minority carriers are essential in order to determine the population of the majority carriers. In the experiments, we used an n–i–n structure, in which electrons are the majority and holes are the minority carriers. © 2001 American Institute of Physics.
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73.21.Cd Superlattices
73.21.Fg Quantum wells
73.63.Hs Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy

M. J. Lukitsch, Y. V. Danylyuk, V. M. Naik, C. Huang, G. W. Auner, L. Rimai, and R. Naik

Appl. Phys. Lett. 79, 632 (2001); http://dx.doi.org/10.1063/1.1388883 (3 pages) | Cited 34 times

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Epitaxial Al1−xInxN thin films with 0 ⩽ x ⩽ 1 have been grown by plasma source molecular beam epitaxy on sapphire (0001) substrates at a low temperature of 375 °C. Both reflection high-energy electron diffraction and x-ray diffraction measurements confirm the c-plane growth with the following epitaxial relations: nitride [0001] ∥ sapphire [0001] and nitride 〈01math0〉 ∥ sapphire 〈2mathmath0〉. However, the degree of crystalline mosaicity and the compositional fluctuation increase with increasing x. The observed direct energy band gap, determined using optical transmission and reflection measurements show relatively less bowing compared to some earlier studies. Electrical resistivity and Hall effect measurements show n-type electrical conductivity in these alloys with carrier concentrations n ≥ 1019 cm−3 for In-rich alloys and n ⩽ 1010 cm−3 for Al-rich alloys. © 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors

Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors

Kuan-Lin Yeh, Horng-Chih Lin, Rou-Gu Huang, Ren-Wei Tsai, and Tiao-Yuan Huang

Appl. Phys. Lett. 79, 635 (2001); http://dx.doi.org/10.1063/1.1390325 (3 pages) | Cited 2 times

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Conduction mechanisms for the off-state leakage in Schottky barrier thin-film transistor were explored. It was found that the field-emission process dominates the leakage conduction of the device with the conventional structure as the field strength in the drain junction becomes high, and results in the strong gate-induced drain leakage (GIDL) like phenomenon. In contrast, for the device with a field-induced-drain structure, the high-field region is pulled away from the silicided drain. As a result, the field-emission conduction is eliminated, so the GIDL-like leakage current is effectively suppressed. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Electrical characterization of nanocrystalline carbon–silicon heterojunctions

N. A. Hastas, C. A. Dimitriadis, D. H. Tassis, and S. Logothetidis

Appl. Phys. Lett. 79, 638 (2001); http://dx.doi.org/10.1063/1.1390488 (3 pages) | Cited 14 times

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Nanocrystalline carbon (nc-C) films were grown by magnetron sputtering on n-type Si substrates at room temperature and at substrate bias voltage −200 V. The electrical transport properties of nc-C/n-Si heterojunctions are investigated by current–voltage measurements at various temperatures and capacitance–voltage measurements at room temperature. The results indicate that the forward conduction is determined by thermionic emission over a potential barrier of height 0.3 eV at temperatures above 180 K. At lower temperatures and low currents, multistep tunneling current dominates. At low reverse voltages, the reverse conduction is dominated by current generated within the depletion region, while at higher voltages the current is due to Poole–Frenkel emission. © 2001 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.63.Bd Nanocrystalline materials
73.50.Fq High-field and nonlinear effects
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