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30 Jul 2001

Volume 79, Issue 5, pp. 557-700

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Enhanced thermal stability of silica-encapsulated metal nanoshells

C. Radloff and N. J. Halas

Appl. Phys. Lett. 79, 674 (2001); http://dx.doi.org/10.1063/1.1389322 (3 pages) | Cited 21 times

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A silica-encapsulating layer of a 60–70 nm thickness is fabricated around composite nanoparticles consisting of a silica core and a gold shell (metal nanoshells). The outer silica layer provides greatly enhanced thermal stability to the nanoparticle, effectively raising its melting temperature by 300° relative to uncoated nanoshells. Both spectroscopic and microscopic structural evaluations are used to assess changes in the nanostructure when subjected to potentially destructive heating cycles. This encapsulation method may prove valuable in enhancing the thermal stability of other types of assembled nanostructures and nanoscale photonic materials. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
64.70.D- Solid-liquid transitions

Transport properties of Bi1−xSbx alloy nanowires synthesized by pressure injection

Yu-Ming Lin, S. B. Cronin, O. Rabin, Jackie Y. Ying, and M. S. Dresselhaus

Appl. Phys. Lett. 79, 677 (2001); http://dx.doi.org/10.1063/1.1385800 (3 pages) | Cited 11 times

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Various transport measurements are performed to assess the alloying and size effects in sub-100 nm Bi1−xSbx (0 ⩽ x ⩽ 0.15) nanowires. Temperature-dependent resistance measurements exhibit non-monotonic trends as x increases, and a theoretical model is presented to explain the features which are related to the unusual band structure of Bi1−xSbx systems. Magnetoresistance measurements of these Bi1−xSbx nanowires show interesting size-dependent behaviors similar to those in Bi nanowires. © 2001 American Institute of Physics.
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73.63.Nm Quantum wires
73.21.Hb Quantum wires
81.07.Vb Quantum wires
73.63.Bd Nanocrystalline materials
81.07.Bc Nanocrystalline materials
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Synthesis of large area aligned carbon nanotube arrays from C2H2–H2 mixture by rf plasma-enhanced chemical vapor deposition

Y. H. Wang, J. Lin, C. H. A. Huan, and G. S. Chen

Appl. Phys. Lett. 79, 680 (2001); http://dx.doi.org/10.1063/1.1390314 (3 pages) | Cited 36 times

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Large area aligned carbon nanotube (CNT) arrays have been successfully synthesized from C2H2 and H2 mixture by rf plasma-enhanced chemical vapor deposition (without hot filament) on iron-coated silicon substrates. H2 plasma (not H2 gas) was confirmed to play the role of reducing iron oxide to metallic iron and promoting the formation of evenly separated particles, as well as being the primary factor in synthesizing aligned CNTs. The addition of H2 gas with no plasma during the growth resulted in randomly oriented CNTs. Meanwhile, without the addition of H2, the C2H2 plasma resulted in the growth of very fine worm-like carbon fibers. Using substrates with a thicker catalyst layer (>90 nm) reduced the CNT density significantly. © 2001 American Institute of Physics.
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81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
61.46.-w Structure of nanoscale materials

Electrolytic formation of nanoapertures for scanning near-field optical microscopy

A. Bouhelier, J. Toquant, H. Tamaru, H.-J. Güntherodt, D. W. Pohl, and G. Schider

Appl. Phys. Lett. 79, 683 (2001); http://dx.doi.org/10.1063/1.1389767 (3 pages) | Cited 12 times

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Aperture probes for near-field optical microscopy were produced by controlled all solid state electrolysis. Control of both the ionic current and light transmission provided reproducible probe tips with aperture diameters in the sub-50 nm range and flat end faces. High resolution scanning near-field optical microscopy images were obtained with these probes. As a by-product, the formation of an electrolytic nanometer-sized contact was observed. © 2001 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
82.45.Qr Electrodeposition and electrodissolution
81.16.Be Chemical synthesis methods

Direct signature of strained GaN quantum dots by Raman scattering

J. Gleize, F. Demangeot, J. Frandon, M. A. Renucci, M. Kuball, B. Damilano, N. Grandjean, and J. Massies

Appl. Phys. Lett. 79, 686 (2001); http://dx.doi.org/10.1063/1.1388880 (3 pages) | Cited 10 times

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We report on a Raman study of strained wurtzite GaN quantum dots embedded in AlN spacers. Various laser excitations between 2.33 and 3.81 eV were used, which allows for selective probing of the dots, through resonant enhancement of the Raman signal. A direct signature of the A1 (LO) and E2 phonons of the GaN dots has been obtained. The measured phonon frequencies show that the mean in-plane strain inside the GaN dots approaches the lattice mismatch between GaN and AlN. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Insulator–metal transition in Coulomb blockade nanostructures

M. Aslam, I. S. Mulla, and K. Vijayamohanan

Appl. Phys. Lett. 79, 689 (2001); http://dx.doi.org/10.1063/1.1381040 (3 pages) | Cited 10 times

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The transition from insulating to metallic behavior is observed at low temperatures for the protected nanocluster arrays of Cu, Ag, and Au. The disappearance of the Kubo gap at low temperature in these systems, where the interparticle spacing (0.5–1 nm) is less than the nanocluster dimensions (10–15 nm), is explained to effect the transition due to strongly coupled charge fluctuations and cluster vibrations. For the same interparticle separation of Cu, Ag, and Au clusters the transition temperature is found to vary significantly, possibly due to the difference in localization arising from the lack of precise size distribution. © 2001 American Institute of Physics.
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73.63.Bd Nanocrystalline materials
72.60.+g Mixed conductivity and conductivity transitions
73.23.Hk Coulomb blockade; single-electron tunneling
71.30.+h Metal-insulator transitions and other electronic transitions
73.22.-f Electronic structure of nanoscale materials and related systems

Selective adsorption and patterning of Si nanoparticles fabricated by laser ablation on functionalized self-assembled monolayer

K. Hata, M. Fujita, S. Yoshida, S. Yasuda, T. Makimura, K. Murakami, H. Shigekawa, W. Mizutani, and H. Tokumoto

Appl. Phys. Lett. 79, 692 (2001); http://dx.doi.org/10.1063/1.1388025 (3 pages) | Cited 5 times

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We demonstrate an in situ selective adsorption of Si nanoparticles fabricated by laser ablation on a functionalized self-assembled monolayer (SAM). Si nanoparticles adsorbed on –CH3 terminated a SAM while Si particles did not adsorb on –NH2, –F, –OH, and –COOH, terminated SAMs. The end group of a SAM solely determines the selectivity against Si nanoparticle adsorption. We utilized the screening ability of functionalized SAMs to pattern Si nanoparticles onto desired locations on a Si substrate. © 2001 American Institute of Physics.
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68.43.Mn Adsorption kinetics
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
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