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6 Aug 2001

Volume 79, Issue 6, pp. 705-888

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Photoinduced optical absorption in Ca3Ga2Ge3O12:Mn garnet

V. V. Eremenko, S. L. Gnatchenko, I. S. Kachur, V. G. Piryatinskaya, M. B. Kosmyna, B. P. Nazarenko, and V. M. Puzikov

Appl. Phys. Lett. 79, 734 (2001); http://dx.doi.org/10.1063/1.1390489 (3 pages) | Cited 5 times

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Persistent photoinduced changes of optical absorption have been found in garnet Ca3Ga2Ge3O12 doped with manganese. Irradiation by a He–Ne laser of 633 nm wavelength results in a noticeable increase in the absorption coefficient of the crystal. The photoinduced changes are observed up to room temperature as distinct from concentrated manganese garnets in which the photoinduced absorption vanishes at much lower temperatures. The wide temperature range of the existence of the photoinduced effect together with a high transparency of the crystal makes it a promising material for optical recording. © 2001 American Institute of Physics.
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75.50.Gg Ferrimagnetics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics

Ellipsometric study of sinusoidally modulated ZnSeTe superlattices

Hosun Lee, S. Lee, and J. K. Furdyna

Appl. Phys. Lett. 79, 737 (2001); http://dx.doi.org/10.1063/1.1391235 (3 pages) | Cited 1 time

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We report an optical study of sinusoidally modulated ZnSeTe superlattices using spectroscopic ellipsometry. The pseudodielectric function 〈ϵ〉 = 〈ϵ1〉+i〈ϵ2〉 was determined for the photon energy range 1.5–6.5 eV and critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈ϵ〉. As the degree of the compositional modulation of the superlattice increased, the energies of E1−R1 and E1+Δ1−R1 either decreased or increased depending on the superlattice period. We explain this behavior in terms of an interlayer coupling and quantum-confinement effect characteristic, respectively, for the two geometries. © 2001 American Institute of Physics.
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68.65.Cd Superlattices
73.21.Cd Superlattices
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Luminescent characteristics of blue-emitting Sr2B5O9Cl: Eu thin-film phosphors

Jianhua Hao and Michael Cocivera

Appl. Phys. Lett. 79, 740 (2001); http://dx.doi.org/10.1063/1.1391410 (3 pages) | Cited 25 times

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Thin films of Sr2B5O9Cl: Eu were deposited on glass plates using spray pyrolysis of aqueous solutions. Films exhibited blue cathodoluminescence and photoluminescence, indicating the films contained Eu2+ rather than Eu3+. A luminance of 76 cd/m2 at 5 kV was obtained for annealed films on glass substrates. The chromaticity coordinates were x = 0.162 and y = 0.035 with a dominant wavelength of 450 nm and a 95% color purity. © 2001 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
78.60.Hk Cathodoluminescence, ionoluminescence
85.45.Fd Field emission displays (FEDs)
81.15.Rs Spray coating techniques

Evidence of eutectic crystallization and transient nucleation in Al89La6Ni5 amorphous alloy

Y. X. Zhuang, J. Z. Jiang, Z. G. Lin, M. Mezouar, W. Crichton, and A. Inoue

Appl. Phys. Lett. 79, 743 (2001); http://dx.doi.org/10.1063/1.1389506 (3 pages) | Cited 14 times

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The phase evolution with the temperature and time in the process of crystallization of Al89La6Ni5 amorphous alloy has been investigated by in situ high-temperature and high-pressure x-ray powder diffraction using synchrotron radiation. Two crystalline phases, fcc-Al and a metastable bcc-(AlNi)11La3-like phase, were identified after the first crystallization reaction, revealing a eutectic reaction instead of a primary reaction suggested in the literature. Time-dependent nucleation in the amorphous alloy is detected and the experimental data can be fitted by both the Zeldovich’s and Kashchiev’s transient nucleation models with transient nucleation times of 220 and 120 min, respectively. © 2001 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
62.50.-p High-pressure effects in solids and liquids

Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth

Takeshi Murata, Hideki Nakazawa, Yoshikazu Tsukidate, and Maki Suemitsu

Appl. Phys. Lett. 79, 746 (2001); http://dx.doi.org/10.1063/1.1389768 (3 pages) | Cited 2 times

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The growth rate and surface hydrogen coverage during Si gas-source molecular beam epitaxy using disilane have been obtained as functions of both the growth temperature and the source-gas pressure. The activation energy of the low-temperature (<600 °C) growth rate was found to increase with the source-gas pressure, indicating a contribution by the adsorption process in these low-temperature growth kinetics. Several growth models have been constructed based on the results, among which the two-site/four-site-adsorption model [M. Suemitsu et al., Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showed the best fit to both the growth rate and the hydrogen coverage. © 2001 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.43.Mn Adsorption kinetics

White microbeam diffraction from distorted crystals

R. Barabash, G. E. Ice, B. C. Larson, G. M. Pharr, K.-S. Chung, and W. Yang

Appl. Phys. Lett. 79, 749 (2001); http://dx.doi.org/10.1063/1.1389321 (3 pages) | Cited 45 times

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We present a general description of white-beam (Laue) scattering from grains with dislocations. This approach is applied to examples with equal numbers of positive and negative Burger’s vectors (paired) and with unpaired dislocations of one sign (geometrically necessary). We find that streaking of the Laue reflections is sensitive to both long-range geometrical rotations introduced by unpaired edge dislocations and to local rotation fluctuations introduced by the total number of dislocations (paired and unpaired). We demonstrate the technique by analyzing the dislocation distribution in a nanoindented Cu single crystal. © 2001 American Institute of Physics.
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61.05.cc Theories of x-ray diffraction and scattering
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Effect of hydrogenation on Al-related photoluminescence in 6H–SiC

Yaroslav Koshka and Michael S. Mazzola

Appl. Phys. Lett. 79, 752 (2001); http://dx.doi.org/10.1063/1.1391403 (3 pages) | Cited 9 times

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Interaction of hydrogen with Al acceptors in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Hydrogenation is performed in hydrogen plasma using a standard inductively coupled plasma etching system. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in relative intensity of Al bound exciton (Al–BE) PL. A gradual quenching of the remaining Al–BE photoluminescence is observed in hydrogenated samples under excitation with above band gap light, resulting in a complete disappearance of Al–BE PL emission. High-temperature annealing completely restores the shape of the PL spectrum to its prehydrogenation form. © 2001 American Institute of Physics.
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71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
81.05.Hd Other semiconductors

Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C–SiC/Si(100) heteroepitaxy

Hideki Nakazawa and Maki Suemitsu

Appl. Phys. Lett. 79, 755 (2001); http://dx.doi.org/10.1063/1.1390476 (3 pages) | Cited 16 times

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By using monomethylsilane (MMS:H3Si–CH3), we have formed a Si1−xCx interfacial buffer layer for 3C–SiC/Si(100) heteroepitaxy at substrate temperature Tf of as low as 450–650 °C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C–SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C–SiC films degrade for Tf<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si–H and Si–C bonds within the MMS molecule. © 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Hd Other semiconductors
68.35.Ct Interface structure and roughness

Change in electrical resistivity due to icosahedral phase precipitation in Zr70Pd20Ni10 and Zr65Al7.5Cu7.5Ni10Ag10 glasses

O. Haruyama, T. Miyazawa, J. Saida, and A. Inoue

Appl. Phys. Lett. 79, 758 (2001); http://dx.doi.org/10.1063/1.1394164 (3 pages) | Cited 5 times

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The glass-to-icosahedral phase transformation in Zr70Pd20Ni10 and Zr65Al7.5Cu7.5Ni10Ag10 glasses was examined by the electrical resistivity measurement performed with a heating rate of 0.67 K/s. The resistivity increased with the promotion of icosahedral precipitation in Zr70Pd20Ni10 glass. On the other hand, Zr65Al7.5Cu7.5Ni10Ag10 glass exhibited the decrement of the resistivity according to the evolution of icosahedral phase. The latter was qualitatively explained by the drop of the resistivity of supercooled liquid phase due to the transfer of oxide atoms into the icosahedral phase. Also, the low temperature resistivity experiment showed that the conductivity of glassy and icosahedral phases might obey the weak localization model of conduction electrons. © 2001 American Institute of Physics.
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61.44.Br Quasicrystals
61.43.Fs Glasses
72.15.Cz Electrical and thermal conduction in amorphous and liquid metals and alloys
64.75.-g Phase equilibria
71.55.Jv Disordered structures; amorphous and glassy solids
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