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20 Aug 2001

Volume 79, Issue 8, pp. 1073-1217

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Intermartensitic transformation and magnetic-field-induced strain in Ni52Mn24.5Ga23.5 single crystals

W. H. Wang, G. H. Wu, J. L. Chen, S. X. Gao, W. S. Zhan, G. H. Wen, and X. X. Zhang

Appl. Phys. Lett. 79, 1148 (2001); http://dx.doi.org/10.1063/1.1396820 (3 pages) | Cited 37 times

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We have found a complete thermoelastic intermartensitic transformation between modulated and unmodulated martensite in single-crystal Ni52Mn24.5Ga23.5. This intermartensitic transformation provides a much larger strain than that of the martensitic transformation. A giant switching-like strain of ±5.0% can be achieved by a small magnetic field of 0.2 T upon the intermartensitic transformation. In the modulated martensite, a large recoverable magnetic-field-induced strain of up to 1.2% has been obtained. © 2001 American Institute of Physics.
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64.70.K- Solid-solid transitions
81.30.Kf Martensitic transformations
75.50.Cc Other ferromagnetic metals and alloys
75.80.+q Magnetomechanical effects, magnetostriction

Magnetic patterning of chemically-ordered CrPt3 films

Olav Hellwig, Dieter Weller, A. J. Kellock, J. E. E. Baglin, and Eric E. Fullerton

Appl. Phys. Lett. 79, 1151 (2001); http://dx.doi.org/10.1063/1.1394722 (3 pages) | Cited 19 times

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We report magnetic patterning of ferrimagnetic CrPt3 films by locally suppressing the magnetic order using ion-beam irradiation. Chemically-ordered CrPt3 films grown on MgO(110) single-crystal and amorphous SiNx substrates are ferrimagnetic and exhibit strain-induced uniaxial magnetic anisotropy. X-ray diffraction confirms the formation of the L12 phase and magneto-optical Kerr effect spectroscopy reveals the theoretically expected dependence of Kerr rotation and ellipticity on photon energy. Irradiation of the films with 700 keV N+ ions at doses ≳6×1016 ions/cm2 transforms the chemically-ordered CrPt3 ferrimagnetic alloy into the chemically-disordered nonmagnetic fcc phase. As a result, ordered CrPt3 layers can be patterned into magnetic and nonmagnetic regions and are candidate material for ion-beam-patterned magnetic recording media. © 2001 American Institute of Physics.
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75.50.Ss Magnetic recording materials
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Gg Ferrimagnetics
61.80.Jh Ion radiation effects
61.82.Bg Metals and alloys
75.30.Gw Magnetic anisotropy
78.20.Ls Magneto-optical effects
68.55.-a Thin film structure and morphology
78.66.Bz Metals and metallic alloys

High critical current density of MgB2 bulk superconductor doped with Ti and sintered at ambient pressure

Y. Zhao, Y. Feng, C. H. Cheng, L. Zhou, Y. Wu, T. Machi, Y. Fudamoto, N. Koshizuka, and M. Murakami

Appl. Phys. Lett. 79, 1154 (2001); http://dx.doi.org/10.1063/1.1396629 (3 pages) | Cited 100 times

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Ti-doped MgB2 superconductors with different doping levels were prepared by solid-state reaction at ambient pressure. The density, diamagnetic signal, and Jc of the samples change significantly with the doping level, with the best result achieved at x = 0.1. At 5 K, the Jc reaches 2×106 A/cm2 in the self-field and 5×104 A/cm2 in 5 T. At 20 K, the Jc is still as high as 1.3×106 A/cm2 in the self-field and 9.4×104 A/cm2 in 2 T. It is observed that partial melting occurs in the Ti-doped samples, resulting in an excellent grain connection and extremely high density. In addition, some fine particles (with sizes from 10 to 100 nm) of the second phases induced by Ti doping are distributed in the MgB2 matrix, and this may play an important role in flux pinning enhancement. © 2001 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.25.Sv Critical currents
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
64.70.D- Solid-liquid transitions
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
74.25.Ha Magnetic properties including vortex structures and related phenomena

Spin-valve transistor with an Fe/Au/Fe(001) base

R. Sato and K. Mizushima

Appl. Phys. Lett. 79, 1157 (2001); http://dx.doi.org/10.1063/1.1397257 (3 pages) | Cited 47 times

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A spin-valve transistor with an epitaxial Fe/Au/Fe(001) base was formed on n-GaAs, the characteristics of which were examined under a magnetic field for emitter voltages up to 3 V. The transfer ratio of the transistor, i.e., the ratio of collector-to-emitter current exceeded 10−3 at 3 V, preserving the magnet current ratio, i.e., the ratio of collector current in the parallel-to-antiparallel magnetic configuration well above 100%. It was suggested that the transfer ratio would be further enhanced by improving the flatness of the tunnel junction for injecting electrons from the emitter into the base, as well as by increasing the electron transmittance at the base/collector interface. © 2001 American Institute of Physics.
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85.75.Hh Spin polarized field effect transistors
75.47.De Giant magnetoresistance
75.75.-c Magnetic properties of nanostructures
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Performance of Co/Al2O3/NiFe magnetic tunnel junctions prepared by a two-step rf plasma oxidation method

K. S. Yoon, J. H. Park, J. H. Choi, J. Y. Yang, C. H. Lee, C. O. Kim, J. P. Hong, and T. W. Kang

Appl. Phys. Lett. 79, 1160 (2001); http://dx.doi.org/10.1063/1.1391407 (3 pages) | Cited 14 times

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A two-step rf plasma oxidation technique of an insulating layer has been performed to enhance electrical and structural properties of magnetic tunnel junction (MTJ) devices. Comparison was made by analyzing properties of the MTJ oxidized by conventional rf and two-step rf plasma oxidation methods. Experimentally observed results give improved surface imaging and sufficient oxygen contents of the insulating layer under the two-step oxidation method. In addition, electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.7 to 1.8 V and from 4.5% to 6.8%, respectively, correlated with improved structural information. © 2001 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
68.65.Ac Multilayers
81.65.Mq Oxidation
75.47.De Giant magnetoresistance
52.77.-j Plasma applications
85.75.Dd Magnetic memory using magnetic tunnel junctions
73.40.Rw Metal-insulator-metal structures
75.45.+j Macroscopic quantum phenomena in magnetic systems

Laser-driven high-current-density pulsed electron emission from lead zirconium titanate ferroelectric ceramic

A. Moorti, S. Sailaja, P. A. Naik, P. D. Gupta, Yu. V. Korobkin, I. V. Romanov, A. A. Rupasov, and A. S. Shikhanov

Appl. Phys. Lett. 79, 1163 (2001); http://dx.doi.org/10.1063/1.1396309 (3 pages) | Cited 3 times

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Laser driven high current density pulsed electron emission is observed from a lead zirconium titanate (PZT, Zr/Ti: 53/47) ferroelectric ceramic disk using second harmonic of neodium: glass laser (wavelength ∼527 nm, pulse duration ∼3 ns, laser fluence ∼5–40 mJ/cm2) in the presence of a dc extraction field. Apart from electron current pulses of ∼100 A/cm2 [full width at half maximum (FWHM) ∼400 ns] obtained from laser irradiation of the surface towards the positive end of the polarization vector, electron current pulses of ∼30 A/cm2 (FWHM ∼1.1 μs) are also emitted from laser irradiation of the opposite surface. Dependencies of various characteristics of the electron pulse on laser fluence in the two configurations are presented. © 2001 American Institute of Physics.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
79.20.Ds Laser-beam impact phenomena

Ferroparaelectric transitions in relaxor materials studied by a photoacoustic technique

J. Luis Pineda Flores, R. Castañeda-Guzmán, M. Villagran-Muniz, and Alfonso Huanosta-Tera

Appl. Phys. Lett. 79, 1166 (2001); http://dx.doi.org/10.1063/1.1394950 (3 pages) | Cited 9 times

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Photoacoustic experiments were carried out in two ceramic compounds to present a promising way to study relaxor materials. This technique has been shown to have some advantages in the investigation of phase transitions in a variety of materials. We use the temperature-dependent data of both dielectric and photoacoustic responses from the ceramic compound Bi4−xRxTi3O12, with Rx = Pr, x = 0 and 1.6, to illustrate this work. We establish definitely that Bi4Ti3O12 is a relaxor. © 2001 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
62.65.+k Acoustical properties of solids
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Nanospot welding of carbon nanotubes

H. Hirayama, Y. Kawamoto, Y. Ohshima, and K. Takayanagi

Appl. Phys. Lett. 79, 1169 (2001); http://dx.doi.org/10.1063/1.1395535 (3 pages) | Cited 23 times

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Single wall carbon nanotube (SWNT) bundles protruding from the SWNT layers on self-aligned Sn apexes were brought to a distance of 30 nm by a scanning tunneling microscope inside a transmission electron microscope. A straight bundle on the tip could be observed in situ in contact electrostatically with a looped bundle on the sample by applying tip bias voltages above 2.0 V. The bundles were welded at the nanometer size contact area by local Joule heating. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.De Nanotubes
81.16.Ta Atom manipulation

Reliability and current carrying capacity of carbon nanotubes

B. Q. Wei, R. Vajtai, and P. M. Ajayan

Appl. Phys. Lett. 79, 1172 (2001); http://dx.doi.org/10.1063/1.1396632 (3 pages) | Cited 244 times

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The current-carrying capacity and reliability studies of multiwalled carbon nanotubes under high current densities (>109 A/cm2) show that no observable failure in the nanotube structure and no measurable change in the resistance are detected at temperatures up to 250 °C and for time scales up to 2 weeks. Our results suggest that nanotubes are potential candidates as interconnects in future large-scale integrated nanoelectronic devices. © 2001 American Institute of Physics.
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73.63.Fg Nanotubes
85.40.Ls Metallization, contacts, interconnects; device isolation
85.35.Kt Nanotube devices

Single-electron charging effect in individual Si nanocrystals

T. Baron, P. Gentile, N. Magnea, and P. Mur

Appl. Phys. Lett. 79, 1175 (2001); http://dx.doi.org/10.1063/1.1392302 (3 pages) | Cited 46 times

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We present a detailed study of the electronic properties of individual silicon nanocrystals (nc-Si) elaborated by low-pressure chemical vapor deposition on 1.2 nm thick SiO2 grown on Si (100). The combination of ultrathin oxide layers and highly doped substrates allows the imaging of the hemispherical dots by scanning tunneling microscopy. Spectroscopic studies of single dots are made by recording the I(V) curves on the Si nanocrystal accurately selected by a metallic tip. These I(V) curves exhibit Coulomb blockade and resonant tunneling effects. Coulomb pseudogaps between 0.15 and 0.2 V are measured for different dots. Capacitances between 0.2 and 1 aF and tunnel resistances around 5×109 Ω are deduced from the width and height of the staircases. The charging and confinement energies deduced from the I(V) curves are in good agreement with a modified orthodox model which includes the quantification of electronic levels. © 2001 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.63.Kv Quantum dots
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Shaping carbon nanostructures by controlling the synthesis process

Vladimir I. Merkulov, Michael A. Guillorn, Douglas H. Lowndes, Michael L. Simpson, and Edgar Voelkl

Appl. Phys. Lett. 79, 1178 (2001); http://dx.doi.org/10.1063/1.1395517 (3 pages) | Cited 96 times

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The ability to control the nanoscale shape of nanostructures in a large-scale synthesis process is an essential and elusive goal of nanotechnology research. Here, we report significant progress toward that goal. We have developed a technique that enables controlled synthesis of nanoscale carbon structures with conical and cylinder-on-cone shapes and provides the capability to dynamically change the nanostructure shape during the synthesis process. In addition, we present a phenomenological model that explains the formation of these nanostructures and provides insight into methods for precisely engineering their shape. Since the growth process we report is highly deterministic in allowing large-scale synthesis of precisely engineered nanoscale components at defined locations, our approach provides an important tool for a practical nanotechnology. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Two-dimensional assembly of gold nanoparticles with a DNA network template

Y. Maeda, H. Tabata, and T. Kawai

Appl. Phys. Lett. 79, 1181 (2001); http://dx.doi.org/10.1063/1.1396630 (3 pages) | Cited 34 times

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Gold nanoparticles have been assembled into two-dimensional complexes using a DNA network template. Atomic force microscope images indicate that gold nanoparticles can be artificially arranged using a DNA molecular template with an average separation of 260 nm. Furthermore, the pattern of the complex can be controlled by changing the concentration of the DNA solution. The results suggest that this method is effective in achieving positional control of nanoscale arrangements for a wide range of applications. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition

Tadashi Kawazoe, Yoh Yamamoto, and Motoichi Ohtsu

Appl. Phys. Lett. 79, 1184 (2001); http://dx.doi.org/10.1063/1.1394955 (3 pages) | Cited 23 times

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We demonstrate a technique for the deposition of nanometric Zn dots by photodissociation of gas-phase diethylzinc using an optical near field under nonresonant conditions. The observed deposited Zn dot was less than 50 nm in size. The photodissociation mechanisms are based on the unique properties of optical near fields, i.e., enhanced two-photon absorption, induced near-field transition, and a direct excitation of the vibration-dissociation mode of diethylzinc. © 2001 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials

Effect of electric field on the electronic structures of carbon nanotubes

Changwook Kim, Bongsoo Kim, Seung Mi Lee, Chulsu Jo, and Young Hee Lee

Appl. Phys. Lett. 79, 1187 (2001); http://dx.doi.org/10.1063/1.1389515 (3 pages) | Cited 24 times

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We have investigated the electronic structures of a capped single-walled carbon nanotube under the applied electric field using density functional calculations. The capped tube withstands field strengths up to 2 V/Å. When the electric field is applied along the tube axis, charges are transferred from the occupied levels localized at the top pentagon of the cap, and not from the highest occupied level localized at the side pentagon, to the unoccupied levels. We find that the charge densities at the top of the armchair cap show two- or five-lobed patterns depending on the field strength, whereas those of the zigzag cap show a three-lobed pattern. The interpretation for the images of the field emission microscope is also discussed. © 2001 American Institute of Physics.
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73.22.-f Electronic structure of nanoscale materials and related systems
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
68.37.Vj Field emission and field-ion microscopy
61.46.-w Structure of nanoscale materials
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Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode–giant magnetoresistance circuits

A. T. Hanbicki, R. Magno, S.-F. Cheng, Y. D. Park, A. S. Bracker, and B. T. Jonker

Appl. Phys. Lett. 79, 1190 (2001); http://dx.doi.org/10.1063/1.1395523 (3 pages) | Cited 10 times

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We have combined resonant interband tunneling diodes (RITDs) with giant magnetoresistance (GMR) elements so that the GMR element controls the switching current and stable operating voltage points of the hybrid circuit. Parallel and series combinations demonstrate continuous or two-state tunability of the subsequent RITD-like current–voltage characteristic via the magnetic field response of the GMR element. Monostable–bistable transition logic element operation is demonstrated with a GMR/RITD circuit in both the dc limit and clocked operation. The output of such hybrid circuits is nonvolatile, reprogrammable, and multivalued. © 2001 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk Junction diodes
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
84.30.Sk Pulse and digital circuits

Barriers to electron extraction in polymer light-emitting diodes

K. Murata, S. Cinà, and N. C. Greenham

Appl. Phys. Lett. 79, 1193 (2001); http://dx.doi.org/10.1063/1.1396627 (3 pages) | Cited 40 times

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We have studied the performance of single-layer polymer light-emitting diodes based on a polyfluorene derivative. Hole-only devices show low currents; however, double-carrier devices show high currents and high efficiencies, implying that the presence of electrons in the device enhances hole injection. By numerical modeling, we show that this behavior is consistent with the presence of a barrier to electron extraction at the anode which causes an increased field for hole injection due to the buildup of electrons at the barrier. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
78.66.Qn Polymers; organic compounds
73.50.Dn Low-field transport and mobility; piezoresistance

Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa, Kenji Shiojima, and Tetsuya Suemitsu

Appl. Phys. Lett. 79, 1196 (2001); http://dx.doi.org/10.1063/1.1398332 (3 pages) | Cited 17 times

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Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron-mobility transistors is reported. The shape of the EL spectra is completely different from the shape of the photoluminescence spectrum. The wavelength for the peak of the EL spectrum gets shorter when the gate–bias voltage is decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband transition of the channel electrons in the high-field region at the drain edge. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
78.60.Fi Electroluminescence
73.50.Fq High-field and nonlinear effects
78.66.Fd III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Double quantum dots as a high sensitive submillimeter-wave detector

O. Astafiev, S. Komiyama, and T. Kutsuwa

Appl. Phys. Lett. 79, 1199 (2001); http://dx.doi.org/10.1063/1.1396628 (3 pages) | Cited 9 times

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A single-electron transistor (SET) consisting of parallel double quantum dots fabricated in a GaAs/AlxGa1−xAs heterostructure crystal is demonstrated and it serves as an extremely high sensitive detector of submillimeter waves (SMMWs). One of the double dots is ionized by a SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum dot, yielding the photoresponse. The noise equivalent power of the detector for wavelengths of about 0.6 mm is estimated to reach the order of 10−17 W/math at 70 mK. © 2001 American Institute of Physics.
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85.35.Gv Single electron devices
73.21.La Quantum dots
73.63.Kv Quantum dots
78.67.Hc Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors

Charge-imaging field-effect transistor

L. H. Chen, M. A. Topinka, B. J. LeRoy, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard

Appl. Phys. Lett. 79, 1202 (2001); http://dx.doi.org/10.1063/1.1395516 (3 pages) | Cited 6 times

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Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at T = 4.2 K has a 1/f behavior and reaches values ≪1e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever. © 2001 American Institute of Physics.
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85.30.Pq Bipolar transistors
72.70.+m Noise processes and phenomena

Lithium–fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

Furong Zhu, Beeling Low, Keran Zhang, and Soojin Chua

Appl. Phys. Lett. 79, 1205 (2001); http://dx.doi.org/10.1063/1.1396819 (3 pages) | Cited 41 times

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Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm2, the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m2 and 7 cd/A. These values were 1170 cd/m2 and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
82.45.Fk Electrodes
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
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Generation of calcium waves in living cells by pulsed-laser-induced photodisruption

Nicholas I. Smith, Katsumasa Fujita, Tomoyuki Kaneko, Kentaro Katoh, Osamu Nakamura, Satoshi Kawata, and Tetsuro Takamatsu

Appl. Phys. Lett. 79, 1208 (2001); http://dx.doi.org/10.1063/1.1397255 (3 pages) | Cited 25 times

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Here, we present an optical technique that can induce waves of calcium ion concentration in live biological cells. Ca2+ waves were induced by femtosecond pulsed-laser illumination. Living HeLa cells were exposed to focused 140 fs pulses of 780 nm wavelength at 30 mW average power. Ca2+ waves were imaged by fluorescence and were observed to propagate from the laser focal point inside the cell. Photoinduced generation of Ca2+ waves can be performed at any point inside the cell, an improvement over previous mechanical or biochemical stimulation techniques. © 2001 American Institute of Physics.
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87.50.W- Optical/infrared radiation effects
87.16.Uv Active transport processes
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Quantitative carrier profiling in ion-implanted 6H–SiC

Filippo Giannazzo, Lucia Calcagno, Vito Raineri, Lorenzo Ciampolini, Mauro Ciappa, and Enrico Napolitani

Appl. Phys. Lett. 79, 1211 (2001); http://dx.doi.org/10.1063/1.1394956 (3 pages) | Cited 13 times

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Dopant profiles in n-type 6H–SiC samples implanted with N+ ions have been measured by scanning capacitance microscopy on cross-sectioned samples. The obtained carrier profiles have been accurately quantified by calculating a complete set of capacitance-to-voltage curves by simulation of the measurement setup, followed by the extraction of the system response characteristic as a function of the local carrier concentration. The discrepancy observed to occur between the scanning capacitance microscopy data and the corresponding secondary ions mass spectroscopy profiles is explained by the fact that the scanning capacitance microscopy is sensitive on the local concentration of free carriers, which is on the local concentration of electrically activated dopant ions. © 2001 American Institute of Physics.
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72.80.Jc Other crystalline inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.up Other materials

Near-field infrared microscopy with a transient photoinduced aperture

D. Simanovskii, D. Palanker, K. Cohn, and T. Smith

Appl. Phys. Lett. 79, 1214 (2001); http://dx.doi.org/10.1063/1.1395524 (3 pages) | Cited 4 times

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We report a method of near-field infrared microscopy with a transient optically induced probe. Photoinduced reflectivity in semiconductors is used to generate a relatively large transient mirror with a small aperture (infrared probe) in its center. Properties of this probe have been studied and first images obtained using the technique are presented. Resolution better than λ/5 at 6.25 μm is demonstrated. Among the advantages of this technique are high optical throughput of the probe, ease in simultaneous visible imaging, and a high scanning rate limited primarily by the pulse repetition rate of the laser system. © 2001 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.60.Pb Conventional optical microscopes
42.79.Pw Imaging detectors and sensors
42.79.Bh Lenses, prisms and mirrors
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Erratum: “Epitaxial growth of orientation‐controlled KNbO3 crystal films on MgO using KTaxNb1−xO3 intermediate layer by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 78, 49 (2001)]

Atsushi Onoe, Ayako Yoshida, and Kiyofumi Chikuma

Appl. Phys. Lett. 79, 1217 (2001); http://dx.doi.org/10.1063/1.1396621 (1 page)

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Abstract Unavailable
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.70.Mp Nonlinear optical crystals
68.55.-a Thin film structure and morphology
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.35.B- Structure of clean surfaces (and surface reconstruction)
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