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20 Aug 2001

Volume 79, Issue 8, pp. 1073-1217

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Nonvolatile reprogrammable logic elements using hybrid resonant tunneling diode–giant magnetoresistance circuits

A. T. Hanbicki, R. Magno, S.-F. Cheng, Y. D. Park, A. S. Bracker, and B. T. Jonker

Appl. Phys. Lett. 79, 1190 (2001); http://dx.doi.org/10.1063/1.1395523 (3 pages) | Cited 10 times

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We have combined resonant interband tunneling diodes (RITDs) with giant magnetoresistance (GMR) elements so that the GMR element controls the switching current and stable operating voltage points of the hybrid circuit. Parallel and series combinations demonstrate continuous or two-state tunability of the subsequent RITD-like current–voltage characteristic via the magnetic field response of the GMR element. Monostable–bistable transition logic element operation is demonstrated with a GMR/RITD circuit in both the dc limit and clocked operation. The output of such hybrid circuits is nonvolatile, reprogrammable, and multivalued. © 2001 American Institute of Physics.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.Kk Junction diodes
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
84.30.Sk Pulse and digital circuits

Barriers to electron extraction in polymer light-emitting diodes

K. Murata, S. Cinà, and N. C. Greenham

Appl. Phys. Lett. 79, 1193 (2001); http://dx.doi.org/10.1063/1.1396627 (3 pages) | Cited 40 times

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We have studied the performance of single-layer polymer light-emitting diodes based on a polyfluorene derivative. Hole-only devices show low currents; however, double-carrier devices show high currents and high efficiencies, implying that the presence of electrons in the device enhances hole injection. By numerical modeling, we show that this behavior is consistent with the presence of a barrier to electron extraction at the anode which causes an increased field for hole injection due to the buildup of electrons at the barrier. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
78.66.Qn Polymers; organic compounds
73.50.Dn Low-field transport and mobility; piezoresistance

Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa, Kenji Shiojima, and Tetsuya Suemitsu

Appl. Phys. Lett. 79, 1196 (2001); http://dx.doi.org/10.1063/1.1398332 (3 pages) | Cited 17 times

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Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron-mobility transistors is reported. The shape of the EL spectra is completely different from the shape of the photoluminescence spectrum. The wavelength for the peak of the EL spectrum gets shorter when the gate–bias voltage is decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband transition of the channel electrons in the high-field region at the drain edge. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
78.60.Fi Electroluminescence
73.50.Fq High-field and nonlinear effects
78.66.Fd III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Double quantum dots as a high sensitive submillimeter-wave detector

O. Astafiev, S. Komiyama, and T. Kutsuwa

Appl. Phys. Lett. 79, 1199 (2001); http://dx.doi.org/10.1063/1.1396628 (3 pages) | Cited 9 times

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A single-electron transistor (SET) consisting of parallel double quantum dots fabricated in a GaAs/AlxGa1−xAs heterostructure crystal is demonstrated and it serves as an extremely high sensitive detector of submillimeter waves (SMMWs). One of the double dots is ionized by a SMMW via Kohn-mode plasma excitation, which affects the SET conductance through the other quantum dot, yielding the photoresponse. The noise equivalent power of the detector for wavelengths of about 0.6 mm is estimated to reach the order of 10−17 W/math at 70 mK. © 2001 American Institute of Physics.
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85.35.Gv Single electron devices
73.21.La Quantum dots
73.63.Kv Quantum dots
78.67.Hc Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors

Charge-imaging field-effect transistor

L. H. Chen, M. A. Topinka, B. J. LeRoy, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard

Appl. Phys. Lett. 79, 1202 (2001); http://dx.doi.org/10.1063/1.1395516 (3 pages) | Cited 6 times

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Charge-imaging field-effect transistors (FETs) were fabricated from a GaAs/AlGaAs heterostructure containing a near-surface two-dimensional electron gas. These FETs have quantum point contact geometries to minimize the size of the channel and to improve the spatial resolution. The charge noise at T = 4.2 K has a 1/f behavior and reaches values ≪1e/Hz1/2 at 30 kHz. The spatial resolution of the FET was measured at liquid He temperatures using a scanned probe microscope with a charged tip. The charge sensitivity of the FET is confined to a disk with full width at half maximum 340 nm. These FETs are suitable for integration onto a GaAs/AlGaAs scanned probe microscopy cantilever. © 2001 American Institute of Physics.
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85.30.Pq Bipolar transistors
72.70.+m Noise processes and phenomena

Lithium–fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

Furong Zhu, Beeling Low, Keran Zhang, and Soojin Chua

Appl. Phys. Lett. 79, 1205 (2001); http://dx.doi.org/10.1063/1.1396819 (3 pages) | Cited 41 times

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Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm2, the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m2 and 7 cd/A. These values were 1170 cd/m2 and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement. © 2001 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
82.45.Fk Electrodes
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
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