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20 Aug 2001

Volume 79, Issue 8, pp. 1073-1217

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Stabilization of the repetition rate of passively Q-switched diode-pumped solid-state lasers

Ngoc Diep Lai, Marc Brunel, Fabien Bretenaker, and Albert Le Floch

Appl. Phys. Lett. 79, 1073 (2001); http://dx.doi.org/10.1063/1.1396320 (3 pages) | Cited 13 times

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We present a simple technique to stabilize the period of the pulses emitted by passively Q-switched lasers. By slightly modulating the pump diode power, the repetition rate of a Nd3+:YAG laser passively Q switched by Cr4+:YAG is experimentally shown to reach a time stability of 10−6 over 106 pulses. Simulations using a rate-equation model are in close agreement with the experiments. © 2001 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes

Bend loss in surface plasmon polariton band-gap structures

Sergey I. Bozhevolnyi, Valentyn S. Volkov, Kristjan Leosson, and Alexandra Boltasseva

Appl. Phys. Lett. 79, 1076 (2001); http://dx.doi.org/10.1063/1.1389507 (3 pages) | Cited 41 times

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Using near-field optical microscopy, we investigate propagation of surface plasmon polaritons (SPPs) excited in the wavelength range of 720–830 nm at a corrugated gold-film surface with areas of 200-nm-wide and 45-nm-high scatterers arranged in a 410-nm-period triangular lattice containing line defects with double bends. We find that, for ∼2-μm-wide line defects and the wavelength of ∼740 nm, the double bend losses for bend angles of 15° and 30° are below 2 and 10 dB, respectively. Our data indicate that the bend loss increases approximately quadratically with the bend angle. We also demonstrate splitting and combining of two SPP line-defect modes in a 20-μm-long Y junction. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Light-induced self-written three-dimensional optical waveguide

Manabu Kagami, Tatsuya Yamashita, and Hiroshi Ito

Appl. Phys. Lett. 79, 1079 (2001); http://dx.doi.org/10.1063/1.1389516 (3 pages) | Cited 54 times

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Three-dimensional (3D) optical waveguides were fabricated in a photopolymerizing resin mixture solution by using a multimode optical fiber, without any moving parts. The core portion has formed by the selective photopolymerization of a higher refractive index monomer by Ar+ laser irradiation through the optical fiber. A continuous, straight waveguide was grown by the self-trapping of a guided laser beam. We demonstrated automatic 3D optical circuit formation that enables regrowth after passing through thick transparent glass plates. This growth mechanism also enables automation of the optical interconnection and packaging process, and could potentially contribute to future expansion of optical fiber communications networks. © 2001 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.81.Bm Fabrication, cladding, and splicing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
82.35.-x Polymers: properties; reactions; polymerization
82.50.-m Photochemistry
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.Ds Interconnects, including holographic interconnects
42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics

Intense and stable blue-light emission of Pb(ZrxTi1−x)O3

Chang Q Sun, Da Jin, Ji Zhou, S. Li, B. K. Tay, S. P. Lau, X. W. Sun, H. T. Huang, and P. Hing

Appl. Phys. Lett. 79, 1082 (2001); http://dx.doi.org/10.1063/1.1394946 (3 pages) | Cited 8 times

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A single band of photoluminescence (PL) has been detected at room temperature from the Pb(ZrxTi1−x)O3 (x = 0–1.0) surface. The intense and stable PL band covers 475±50 nm (or 2.67±0.25 eV) wavelengths and the corresponding photoexcitation (PE) band is in the range of 305±45 nm. It is found that changing the x value causes a negligible shift of the PL and PE peaks, and the light emission is subject to the Pb presence. The minimal lifetime of the excited photons was found to be 0.03 ms at x = 0.5 and the maximum lifetime of 0.60 ms can be achieved by either decreasing or increasing the x values. © 2001 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
61.66.Bi Elemental solids
61.66.Dk Alloys

Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

J. C. L. Yong, J. M. Rorison, and I. H. White

Appl. Phys. Lett. 79, 1085 (2001); http://dx.doi.org/10.1063/1.1390482 (3 pages) | Cited 8 times

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The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.Fg Quantum wells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
71.55.Eq III-V semiconductors

Wavelength tunable diffractive transmission lens for hard x rays

C. David, B. Nöhammer, and E. Ziegler

Appl. Phys. Lett. 79, 1088 (2001); http://dx.doi.org/10.1063/1.1379364 (3 pages) | Cited 17 times

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We report on the fabrication and testing of linear transmission Fresnel zone plates for hard x rays. The diffractive elements are generated by electron beam lithography and chemical wet etching of 〈110〉 oriented silicon substrates. By tilting the cylindrical lenses with respect to the x-ray beam, the effective path through the phase shifting zones can be varied. This makes it possible to optimize the diffraction efficiency over a wide range of photon energies, and to obtain effective aspect ratios not accessible with untilted optics. The diffraction efficiency of such a lens was measured as a function of the tilt angles for various energies between 8 and 29 keV. Values close to the theoretical limit were obtained for all energies. Because of the coherence preserving properties of diffractive optics, the method opens up opportunities for experiments using coherent hard x rays. © 2001 American Institute of Physics.
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
41.50.+h X-ray beams and x-ray optics
61.05.cp X-ray diffraction
07.85.-m X- and γ-ray instruments

Observation of an anomalously large blueshift of the photoluminescence peak and evidence of band-gap renormalization in InP/InAs/InP quantum wires

Xiaodong Mu, Ioulia B. Zotova, Yujie J. Ding, Haeyeon Yang, and Gregory J. Salamo

Appl. Phys. Lett. 79, 1091 (2001); http://dx.doi.org/10.1063/1.1390483 (3 pages) | Cited 7 times

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We have investigated polarization-dependent photoluminescence in InP/InAs/InP quantum wires directly formed on the top of InP substrates. With excitation laser intensity we have observed an anomalously large blueshift of the photoluminescence peak using a cw laser with extremely low intensities. We have also observed evidence of band-gap renormalization. In addition, we have measured two-photon luminescence spectra and confirmed their dependence on photoluminescence polarization. © 2001 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.Lt Quantum wires
73.21.Hb Quantum wires
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