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20 Aug 2001

Volume 79, Issue 8, pp. 1073-1217

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Nanospot welding of carbon nanotubes

H. Hirayama, Y. Kawamoto, Y. Ohshima, and K. Takayanagi

Appl. Phys. Lett. 79, 1169 (2001); http://dx.doi.org/10.1063/1.1395535 (3 pages) | Cited 23 times

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Single wall carbon nanotube (SWNT) bundles protruding from the SWNT layers on self-aligned Sn apexes were brought to a distance of 30 nm by a scanning tunneling microscope inside a transmission electron microscope. A straight bundle on the tip could be observed in situ in contact electrostatically with a looped bundle on the sample by applying tip bias voltages above 2.0 V. The bundles were welded at the nanometer size contact area by local Joule heating. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.De Nanotubes
81.16.Ta Atom manipulation

Reliability and current carrying capacity of carbon nanotubes

B. Q. Wei, R. Vajtai, and P. M. Ajayan

Appl. Phys. Lett. 79, 1172 (2001); http://dx.doi.org/10.1063/1.1396632 (3 pages) | Cited 244 times

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The current-carrying capacity and reliability studies of multiwalled carbon nanotubes under high current densities (>109 A/cm2) show that no observable failure in the nanotube structure and no measurable change in the resistance are detected at temperatures up to 250 °C and for time scales up to 2 weeks. Our results suggest that nanotubes are potential candidates as interconnects in future large-scale integrated nanoelectronic devices. © 2001 American Institute of Physics.
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73.63.Fg Nanotubes
85.40.Ls Metallization, contacts, interconnects; device isolation
85.35.Kt Nanotube devices

Single-electron charging effect in individual Si nanocrystals

T. Baron, P. Gentile, N. Magnea, and P. Mur

Appl. Phys. Lett. 79, 1175 (2001); http://dx.doi.org/10.1063/1.1392302 (3 pages) | Cited 46 times

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We present a detailed study of the electronic properties of individual silicon nanocrystals (nc-Si) elaborated by low-pressure chemical vapor deposition on 1.2 nm thick SiO2 grown on Si (100). The combination of ultrathin oxide layers and highly doped substrates allows the imaging of the hemispherical dots by scanning tunneling microscopy. Spectroscopic studies of single dots are made by recording the I(V) curves on the Si nanocrystal accurately selected by a metallic tip. These I(V) curves exhibit Coulomb blockade and resonant tunneling effects. Coulomb pseudogaps between 0.15 and 0.2 V are measured for different dots. Capacitances between 0.2 and 1 aF and tunnel resistances around 5×109 Ω are deduced from the width and height of the staircases. The charging and confinement energies deduced from the I(V) curves are in good agreement with a modified orthodox model which includes the quantification of electronic levels. © 2001 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.63.Kv Quantum dots
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Shaping carbon nanostructures by controlling the synthesis process

Vladimir I. Merkulov, Michael A. Guillorn, Douglas H. Lowndes, Michael L. Simpson, and Edgar Voelkl

Appl. Phys. Lett. 79, 1178 (2001); http://dx.doi.org/10.1063/1.1395517 (3 pages) | Cited 96 times

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The ability to control the nanoscale shape of nanostructures in a large-scale synthesis process is an essential and elusive goal of nanotechnology research. Here, we report significant progress toward that goal. We have developed a technique that enables controlled synthesis of nanoscale carbon structures with conical and cylinder-on-cone shapes and provides the capability to dynamically change the nanostructure shape during the synthesis process. In addition, we present a phenomenological model that explains the formation of these nanostructures and provides insight into methods for precisely engineering their shape. Since the growth process we report is highly deterministic in allowing large-scale synthesis of precisely engineered nanoscale components at defined locations, our approach provides an important tool for a practical nanotechnology. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Two-dimensional assembly of gold nanoparticles with a DNA network template

Y. Maeda, H. Tabata, and T. Kawai

Appl. Phys. Lett. 79, 1181 (2001); http://dx.doi.org/10.1063/1.1396630 (3 pages) | Cited 34 times

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Gold nanoparticles have been assembled into two-dimensional complexes using a DNA network template. Atomic force microscope images indicate that gold nanoparticles can be artificially arranged using a DNA molecular template with an average separation of 260 nm. Furthermore, the pattern of the complex can be controlled by changing the concentration of the DNA solution. The results suggest that this method is effective in achieving positional control of nanoscale arrangements for a wide range of applications. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition

Tadashi Kawazoe, Yoh Yamamoto, and Motoichi Ohtsu

Appl. Phys. Lett. 79, 1184 (2001); http://dx.doi.org/10.1063/1.1394955 (3 pages) | Cited 23 times

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We demonstrate a technique for the deposition of nanometric Zn dots by photodissociation of gas-phase diethylzinc using an optical near field under nonresonant conditions. The observed deposited Zn dot was less than 50 nm in size. The photodissociation mechanisms are based on the unique properties of optical near fields, i.e., enhanced two-photon absorption, induced near-field transition, and a direct excitation of the vibration-dissociation mode of diethylzinc. © 2001 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.07.Ta Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials

Effect of electric field on the electronic structures of carbon nanotubes

Changwook Kim, Bongsoo Kim, Seung Mi Lee, Chulsu Jo, and Young Hee Lee

Appl. Phys. Lett. 79, 1187 (2001); http://dx.doi.org/10.1063/1.1389515 (3 pages) | Cited 24 times

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We have investigated the electronic structures of a capped single-walled carbon nanotube under the applied electric field using density functional calculations. The capped tube withstands field strengths up to 2 V/Å. When the electric field is applied along the tube axis, charges are transferred from the occupied levels localized at the top pentagon of the cap, and not from the highest occupied level localized at the side pentagon, to the unoccupied levels. We find that the charge densities at the top of the armchair cap show two- or five-lobed patterns depending on the field strength, whereas those of the zigzag cap show a three-lobed pattern. The interpretation for the images of the field emission microscope is also discussed. © 2001 American Institute of Physics.
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73.22.-f Electronic structure of nanoscale materials and related systems
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
68.37.Vj Field emission and field-ion microscopy
61.46.-w Structure of nanoscale materials
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