• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Appl. Phys. Lett. 80, 52 (2002); http://dx.doi.org/10.1063/1.1430505 (3 pages)

Ab initio modeling and experimental study of C–B interactions in Si

Chun-Li Liu1,2, Wolfgang Windl1,2, Len Borucki1,2, Shifeng Lu1,2, and Xiang-Yang Liu3

1Digital DNA™ Laboratories, Motorola, Incorporated, Mesa, Arizona 85202
2Austin, Texas 78721
3Physical Sciences Research Laboratory, Motorola, Incorporated Los Alamos, New Mexico 87544

(Received 11 June 2001; accepted 5 November 2001)

We present results of ab initio calculations for the structure and energetics of small boron-carbon-interstitial and carbon-interstitial clusters in silicon and a respective continuum model for the nucleation, growth, and dissolution of these clusters. To test our calculations, we also measure secondary-ion mass spectra of boron and carbon in a SiGeCB system, which our model reproduces well. For the considered concentration regime, we find rapid carbon diffusion, nearly immobile boron, and undersaturation of silicon self-interstitials, resulting mainly from two clusters suggested by our ab initio results, the dicarbon-interstitial cluster and the boron-carbon-interstitial cluster. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

  • 61.72.Yx

    Interaction between different crystal defects; gettering effect

  • 61.72.J-

    Point defects and defect clusters

  • 66.30.J-

    Diffusion of impurities

  • 79.20.Rf

    Atomic, molecular, and ion beam impact and interactions with surfaces

  • 31.15.A-

    Ab initio calculations

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    P. A. Stolk, D. J. Eaglesham, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 66, 1370 (1995)APPLAB000066000011001370000001.

    R. Scholz, U. Gsele, J. Y. Y. Huh, and T. Y. Tan, Appl. Phys. Lett. 72, 200 (1998)APPLAB000072000002000200000001.

    R. Stumpf, C.-L. Liu, and C. Tracy, Appl. Phys. Lett. 75, 1389 (1999)APPLAB000075000010001389000001.

    W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. Masquelier, Phys. Rev. Lett. 83, 4345 (1999).

    C.-L. Liu, L. J. Borucki, T. Merchant, M. Stoker, and A. Korkin, Appl. Phys. Lett. 76, 885 (2000)APPLAB000076000007000885000001.

    R. B. Capaz, A. Dal Pino, Jr., and J. D. Joannopoulos, Phys. Rev. B 50, 7439 (1994).

    P. Werner, H.-J. Gossmann, D. C. Jacobsen, and U. Gsele, Appl. Phys. Lett. 73, 2465 (1998)APPLAB000073000017002465000001.

    X.-Y. Liu, W. Windl, and M. Masquelier, Appl. Phys. Lett. 77, 2018 (2000)APPLAB000077000013002018000001.

    W. Windl, O. F. Sankey, and J. Menndez, Phys. Rev. B 57, 2431 (1998).

    R. B. Capaz, A. Dal Pino, Jr., and J. D. Joannopulous, Phys. Rev. B 58, 9845 (1998).

    H. Rücker, B. Heinemann, W. Ropke, R. Kurps, D. Kruger, G. Lippert, and H. J. Osten, Appl. Phys. Lett. 73, 1682 (1998)APPLAB000073000012001682000001.


For access to citing articles, you need to log in.



Close
Google Calendar
ADVERTISEMENT

close