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Appl. Phys. Lett. 80, 52 (2002); http://dx.doi.org/10.1063/1.1430505 (3 pages)
Ab initio modeling and experimental study of C–B interactions in Si
(Received 11 June 2001; accepted 5 November 2001)
We present results of ab initio calculations for the structure and energetics of small boron-carbon-interstitial and carbon-interstitial clusters in silicon and a respective continuum model for the nucleation, growth, and dissolution of these clusters. To test our calculations, we also measure secondary-ion mass spectra of boron and carbon in a SiGeCB system, which our model reproduces well. For the considered concentration regime, we find rapid carbon diffusion, nearly immobile boron, and undersaturation of silicon self-interstitials, resulting mainly from two clusters suggested by our ab initio results, the dicarbon-interstitial cluster and the boron-carbon-interstitial cluster. © 2002 American Institute of Physics.
© 2002 American Institute of Physics
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