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11 Mar 2002

Volume 80, Issue 10, pp. 1683-1849

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Effect of interface structure on the optical properties of InAs/GaSb laser active regions

Wayne H. Lau and Michael E. Flatté

Appl. Phys. Lett. 80, 1683 (2002); http://dx.doi.org/10.1063/1.1456238 (3 pages) | Cited 22 times

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We present calculations of the fundamental band gap and intervalence absorption in InAs/GaSb materials incorporating both the intrinsic atomistic symmetry of interface bonding and typical compositional gradients near the interfaces. Including these effects quantitatively explains experimentally observed systematic trends in the band gaps of InAs/GaSb superlattices. Calculations of intervalence absorption indicate that the internal loss in laser active regions based on these materials can not be predicted quantitatively without including these effects. © 2002 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.67.De Quantum wells
73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
42.55.Px Semiconductor lasers; laser diodes
68.65.Fg Quantum wells

Analysis of waves near focus: Method and experimental test

Salvador Bosch and Josep Ferré-Borrull

Appl. Phys. Lett. 80, 1686 (2002); http://dx.doi.org/10.1063/1.1450043 (3 pages) | Cited 3 times

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We present an approach to the analysis of scalar wave focusing. A detailed study is made of an optical system where the basic idea is to define the geometry of the semiperiodic zones within the exit pupil, followed by a numerical integration on these zones. This approach clearly illustrates the nature of the phenomena involved and allows exact computations in focal regions. A practical illustration is presented by considering a meniscus lens system. The method may be readily adapted to a wide range of applications in confocal microscopy, or be used in the analysis of an optical instrument’s resolving power. © 2002 American Institute of Physics.
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42.15.Dp Wave fronts and ray tracing
42.79.Bh Lenses, prisms and mirrors

Experimental and theoretical confirmation of Bloch-mode light propagation in planar photonic crystal waveguides

Marko Lončar, Dušan Nedeljković, Thomas P. Pearsall, Jelena Vučković, Axel Scherer, Sergey Kuchinsky, and Douglas C. Allan

Appl. Phys. Lett. 80, 1689 (2002); http://dx.doi.org/10.1063/1.1452791 (3 pages) | Cited 50 times

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The dispersion diagram of the leaky modes in the planar photonic crystal waveguide is experimentally obtained for the wavelengths from 1440 to 1590 nm. A small stop band, around wavelength 1500 nm, is detected. The experimentally obtained results are in very good agreement with our three-dimensional finite difference time domain calculations. Propagation losses of the leaky modes are estimated and we have found that they decrease as we approach the ministop band. © 2002 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers
02.70.Bf Finite-difference methods

High performance Feussner-type polarizers based on stretched poly(ethylene-terephthalate) films

J. C. Martínez-Antón and E. Bernabeu

Appl. Phys. Lett. 80, 1692 (2002); http://dx.doi.org/10.1063/1.1457529 (3 pages) | Cited 2 times

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Stretched poly(ethylene-terephthalate) films appear to be an interesting optical plastic for use in polarization control devices. By means of stretching ratios its birefringence, in practice, can be tailored from ∼0 to ∼0.17. It has a very wide transmission window (∼0.32–5.70 μm) and good thermal, mechanical, and chemical properties. We propose using it for polarizers based on the Feussner design. By implementing this configuration with a biaxially stretched film, we have obtained a polarizer with an achromatic extinction ratio better than 1 part in 50 000. This is comparable with conventional Glan–Thompson polarizers but with additional advantages. The principal refractive indices of the film (in the 0.43–5.7 μm range) and the operational range of the polarizer presented are also provided. © 2002 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Wc Optical coatings
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
68.60.Bs Mechanical and acoustical properties
78.20.Fm Birefringence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Vertically segregated polymer-blend photovoltaic thin-film structures through surface-mediated solution processing

A. C. Arias, N. Corcoran, M. Banach, R. H. Friend, J. D. MacKenzie, and W. T. S. Huck

Appl. Phys. Lett. 80, 1695 (2002); http://dx.doi.org/10.1063/1.1456550 (3 pages) | Cited 80 times

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Surface treatment and solvent evaporation control are used to promote vertical segregation in polyfluorene-blend thin films. This surface-mediated control of the compositional structure in the direction normal to the plane of the film has important implications for optimizing charge transport in solution-processed conjugated polymer-blend optoelectronics. Here, the surface energy of the hole-collector electrode of photovoltaic devices is modified by deposition of self-assembled monolayers to favor segregation of the hole-accepting component of the blend to the substrate. Devices fabricated with intentionally vertically segregated blends showed external quantum efficiencies of up to 14%, which is ten times higher than that of devices fabricated without surface modification. © 2002 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
73.61.Ph Polymers; organic compounds
78.66.Qn Polymers; organic compounds
81.65.-b Surface treatments
85.60.-q Optoelectronic devices

Wider bandwidth with high transmission through waveguide bends in two-dimensional photonic crystal slabs

Alongkarn Chutinan, Makoto Okano, and Susumu Noda

Appl. Phys. Lett. 80, 1698 (2002); http://dx.doi.org/10.1063/1.1458529 (3 pages) | Cited 72 times

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We demonstrate the use of a defect to improve the transmission property of waveguide bends in two-dimensional photonic crystal slabs. We show that high reflection in the two-dimensional photonic crystal slab previously reported is due to the fact that the waveguide is multimoded at the bend while it is single moded along the straight waveguide. By making the waveguide single moded at the bend, the transmission property can be significantly improved. An extension of more than twice of high-transmission bandwidth is achieved. © 2002 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Acousto-optic diffraction of blue and red light in GaN

D. Ciplys, R. Rimeika, M. S. Shur, R. Gaska, J. Deng, J. W. Yang, and M. A. Khan

Appl. Phys. Lett. 80, 1701 (2002); http://dx.doi.org/10.1063/1.1458690 (3 pages) | Cited 12 times

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The diffraction of guided optical waves on surface acoustic waves in a GaN layer grown by metalorganic chemical-vapor deposition on a (0001) sapphire substrate has been experimentally studied. The measurements have been performed at optical wavelengths 442 and 633 nm for the acoustic wavelength of 16 μm. The acousto-optic diffraction regime was close to the pure Bragg diffraction regime. The advantage of considerably lower acoustic power required at the shorter optical wavelength for diffraction is demonstrated. Our results show the potential of GaN-based structures for the development of blue acousto-optical devices. © 2002 American Institute of Physics.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.66.Fd III-V semiconductors
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
42.79.Jq Acousto-optical devices

Demonstration of high gain amplification of femtosecond ultraviolet laser pulses

K. Osvay, G. Kurdi, J. Klebniczki, M. Csatári, and I. N. Ross

Appl. Phys. Lett. 80, 1704 (2002); http://dx.doi.org/10.1063/1.1458532 (3 pages) | Cited 8 times

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Femtosecond pulses at 400 nm were amplified using a noncollinear optical parametric amplifier pumped by picosecond pulses at 267 nm. A flat spectral gain exceeding 3500 was achieved in single pass within the available 17 nm bandwidth of the signal pulse. The effect of pump depletion, group delay difference, and the geometry of the interacting pulses on the spectral gain are also investigated. © 2002 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Yj Optical parametric oscillators and amplifiers

Timing jitter reduction in modelocked semiconductor lasers with photon seeding

Leaf A. Jiang, Kazi S. Abedin, Matthew E. Grein, and Erich P. Ippen

Appl. Phys. Lett. 80, 1707 (2002); http://dx.doi.org/10.1063/1.1459112 (3 pages) | Cited 5 times

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We demonstrate improvement of the noise performance of a modelocked semiconductor laser using coherent photon seeding. We show that the timing jitter can be reduced without increasing the pulse width. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.60.Fc Modulation, tuning, and mode locking

All-optical Mach–Zehnder modulator using a photochromic dye-doped polymer

Jae-Wook Kang, Jang-Joo Kim, and Eunkyoung Kim

Appl. Phys. Lett. 80, 1710 (2002); http://dx.doi.org/10.1063/1.1459111 (3 pages) | Cited 21 times

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An all-optical Mach–Zehnder modulator is demonstrated which is composed of a polymer waveguide doped with a photochromic dye in the core and a thick light blocking metal layer on it. The metal layer was opened on one arm of the Mach–Zehnder modulator, so that only one arm of the modulator could be irradiated by modulation light, thus allowing a differential phase shift. The optical modulator exhibited an extinction ratio of about −12 dB at a wavelength of 1.55 μm. A simple kinetic model developed to delineate the refractive index change in the dye-doped polymer film was applied to predict the evolution of the modulation characteristics. © 2002 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.70.Jk Polymers and organics
07.60.Ly Interferometers
78.66.Qn Polymers; organic compounds
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.79.Wc Optical coatings

Enhancement of laser-induced optical breakdown using metal/dendrimer nanocomposites

Jing Yong Ye, Lajos Balogh, and Theodore B. Norris

Appl. Phys. Lett. 80, 1713 (2002); http://dx.doi.org/10.1063/1.1459483 (3 pages) | Cited 11 times

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We demonstrate that dendrimer nanocomposites (DNC) can be used to remarkably change the laser-induced optical breakdown (LIOB) threshold of a material, owing to a large enhancement of the local electric field. We have implemented LIOB using femtosecond laser pulses in a gold/dendrimer hybrid nanocomposite as a model system. Third-harmonic generation measurements have been employed as a sensitive way for monitoring the LIOB in situ and in real time. The observed statistical behavior of the breakdown process is attributed to a laser-driven aggregation of individual DNC particles. The breakdown threshold value of the DNC has been found to be up to two orders of magnitude lower than that of pure dendrimers or normal tissues. © 2002 American Institute of Physics.
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77.22.Jp Dielectric breakdown and space-charge effects
61.82.Rx Nanocrystalline materials
78.47.-p Spectroscopy of solid state dynamics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.84.Lf Composite materials
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Correlation between plasma expansion dynamics and gold-thin film structure during pulsed-laser deposition

Eric Irissou, Boris Le Drogoff, Mohamed Chaker, and Daniel Guay

Appl. Phys. Lett. 80, 1716 (2002); http://dx.doi.org/10.1063/1.1458534 (3 pages) | Cited 23 times

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Pulsed-laser deposition of Au thin films has been achieved by ablating a gold target with a KrF excimer Laser in various conditions of ambient Ar gas pressure (from 10−5 to 4 Torr) and target-to-substrate distance (from 1.0 to 11 cm). The dynamics of the plasma plume were measured in the same conditions. Highly oriented Au (111) thin films are obtained for pressure-distance deposition conditions such that the neutral Au species have a typical velocity larger than 2 km s−1, while a polycrystalline powder is obtained when the typical velocity is smaller than 0.8 km s−1. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Application of hollow channel between sustain electrodes to improve discharge characteristics in alternating current plasma display panels

Seung-Hyun Son, Yong-Suk Park, Seong-Chan Bae, and Sie-Young Choi

Appl. Phys. Lett. 80, 1719 (2002); http://dx.doi.org/10.1063/1.1458527 (3 pages) | Cited 9 times

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A front-panel structure with a hollow channel between sustain electrodes for an alternating current plasma display panel is proposed to achieve a low breakdown voltage and short discharge time lag due to the strong electric field in the hollow channel. When compared with a conventional structure, the structure with a hollow channel produced a 15% firing voltage improvement, 8% minimum sustaining voltage improvement at a neon gas pressure of 150 Torr, and 8% discharge time lag improvement at a sustaining voltage of 270 V. © 2002 American Institute of Physics.
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85.60.Pg Display systems
52.75.-d Plasma devices

Radial structure of a low-frequency atmospheric-pressure glow discharge in helium

L. Mangolini, K. Orlov, U. Kortshagen, J. Heberlein, and U. Kogelschatz

Appl. Phys. Lett. 80, 1722 (2002); http://dx.doi.org/10.1063/1.1458684 (3 pages) | Cited 67 times

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The spatial structure of a low-frequency atmospheric-pressure glow discharge was studied experimentally. The radial current distribution and discharge light emission were simultaneously measured at different phases during the ac voltage cycle. The glow discharge is formed by a radially propagating ionization wave. We also observed discharge regimes with several current pulses per half cycle corresponding to the successive, spatially separated breakdowns. © 2002 American Institute of Physics.
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52.80.Hc Glow; corona

Heating-mode transition in the capacitive mode of inductively coupled plasmas

ChinWook Chung and Hong-Young Chang

Appl. Phys. Lett. 80, 1725 (2002); http://dx.doi.org/10.1063/1.1456263 (3 pages) | Cited 21 times

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The evolution of the electron energy distribution function (EEDF) against pressure is investigated in the capacitive mode of inductively coupled plasma (ICP). A significant change in the EEDFs is observed: a bi-Maxwellian EEDF at low pressure ( ⩽ 10 mTorr) evolves into a Druyvestein-like EEDF at high pressure ( ≥ 50 mTorr) in the capacitive mode (low-density mode) while the EEDFs in the inductive mode (high-density mode) does not evolve like in the capacitive mode due to high electron–electron collisions. This EEDF transition in the capacitive mode of ICP is similar to that in the capacitive coupled plasma (CCP) reported in literature [V. A. Godyak and R. B. Piejak, Phys. Rev. Lett. 65, 996(1990)] as pressure increases. This observation directly shows that the electron heating mechanism of the capacitive mode in the ICP is the same as that in the CCP, as expected. © 2002 American Institute of Physics.
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52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.20.Fs Electron collisions
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Effect of N2O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition

S. P. Kim, S. K. Choi, Youngsoo Park, and Ilsub Chung

Appl. Phys. Lett. 80, 1728 (2002); http://dx.doi.org/10.1063/1.1458528 (3 pages) | Cited 2 times

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The variation of residual stress with the water absorption was reduced drastically by the N2O plasma treatment for fluorinated silicon-oxide thin films. Fourier transformed infrared spectroscopy analysis showed that the film was oxidized by the plasma treatment. It was also determined that the oxidation occurred on the film surface from the P-etch rate and x-ray photoelectron spectroscopy analysis. The experimental results show that the stabilization results from the oxidation of the surface by the N2O plasma treatment. © 2002 American Institute of Physics.
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81.65.Mq Oxidation
52.77.-j Plasma applications
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.30.Hv Other nonmetallic inorganics
79.60.Dp Adsorbed layers and thin films
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Optical properties of the deep Mn acceptor in GaN:Mn

R. Y. Korotkov, J. M. Gregie, and B. W. Wessels

Appl. Phys. Lett. 80, 1731 (2002); http://dx.doi.org/10.1063/1.1456544 (3 pages) | Cited 81 times

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The optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-temperature optical absorption measurements indicate the presence of a Mn-related band with a well-resolved fine structure. The zero-phonon line is at 1.418±0.002 eV with a full width at half maximum of 20±1 meV. Two pseudolocal vibrational modes associated with manganese were observed with energies of hv1 = 20 and hv2 = 73 meV. Deep-level optical spectroscopy measurements on lightly Mn-doped samples indicate that Mn forms a deep acceptor level at Ev+1.42 eV. Using the vacuum referred binding energy model for transition metals and the measured Mn energy level, the electron affinity of GaN is calculated to be 3.4 eV, which agrees well with experimental values. © 2002 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
71.55.Eq III-V semiconductors
63.20.Pw Localized modes

Photoinduced stress in hydrogenated amorphous silicon films

E. Stratakis, E. Spanakis, P. Tzanetakis, H. Fritzsche, S. Guha, and J. Yang

Appl. Phys. Lett. 80, 1734 (2002); http://dx.doi.org/10.1063/1.1458068 (3 pages) | Cited 10 times

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Photo-induced compressive stress ΔS in hydrogenated amorphous silicon (a-Si:H) has been studied using films deposited by plasma-enhanced or hot-wire chemical vapor deposition on crystalline silicon microcantilevers. The kinetics of ΔS(t) first rises with exposure time as t0.5 and follows a stretched exponential. The saturation values ΔSsat correspond to volume changes of about 10−3, which excludes the possibility that ΔS is a consequence of the light-induced creation of coordination defects. The highest-quality films have large initial stress, small values of the Young’s modulus, and a rapid approach of ΔS(t) towards saturation. © 2002 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
81.05.Cy Elemental semiconductors
68.55.-a Thin film structure and morphology
62.20.D- Elasticity

Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Scott T. Huxtable, Alexis R. Abramson, Chang-Lin Tien, Arun Majumdar, Chris LaBounty, Xiaofeng Fan, Gehong Zeng, John E. Bowers, Ali Shakouri, and Edward T. Croke

Appl. Phys. Lett. 80, 1737 (2002); http://dx.doi.org/10.1063/1.1455693 (3 pages) | Cited 90 times

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The cross-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattices and three Si0.84Ge0.16/Si0.76Ge0.24 superlattices, with periods ranging from 45 to 300 and from 100 to 200 Å, respectively, were measured over a temperature range of 50 to 320 K. For the Si/Si0.7Ge0.3 superlattices, the thermal conductivity was found to decrease with a decrease in period thickness and, at a period thickness of 45 Å, it approached the alloy limit. For the Si0.84Ge0.16/Si0.76Ge0.24 samples, no dependence on period thickness was found and all the data collapsed to the alloy value, indicating the dominance of alloy scattering. This difference in thermal conductivity behavior between the two superlattices was attributed to interfacial acoustic impedance mismatch, which is much larger for Si/Si0.7Ge0.3 than for Si0.84Ge0.16/Si0.76Ge0.24. The thermal conductivity increased slightly up to about 200 K, but was relatively independent of temperature from 200 to 320 K. © 2002 American Institute of Physics.
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68.65.Cd Superlattices
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.35.Ct Interface structure and roughness
68.35.Iv Acoustical properties
81.05.Cy Elemental semiconductors

Radiative recombination mechanism in GaNxP1−x alloys

I. A. Buyanova, G. Yu. Rudko, W. M. Chen, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 80, 1740 (2002); http://dx.doi.org/10.1063/1.1455144 (3 pages) | Cited 34 times

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Based on the results of temperature-dependent photoluminescence (PL) and absorption measurements, the PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures with N composition up to 4% is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition, these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent redshift of the PL maximum position. © 2002 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.67.De Quantum wells
73.25.+i Surface conductivity and carrier phenomena

Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

S. Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald

Appl. Phys. Lett. 80, 1743 (2002); http://dx.doi.org/10.1063/1.1458047 (3 pages) | Cited 22 times

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The diffusion behavior of ion-implanted arsenic and phosphorus in relaxed Si0.8Ge0.2 has been investigated. Under equilibrium, extrinsic conditions, both dopants are observed to diffuse faster in SiGe than in Si. Simulations of the measured profiles suggest that the ratio of the effective diffusivity in Si0.8Ge0.2 compared to that in Si is roughly seven for arsenic, and roughly two for phosphorus. Under transient diffusion conditions, the arsenic diffusivity in SiGe is retarded, and the magnitude of the diffusion is roughly the same as that in Si. This result suggests that it is possible to optimize the diffusion conditions to achieve n+ source/drain junctions that are as shallow in SiGe as in Si. © 2002 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Giant magnetic-field-induced strain in NiMnGa seven-layered martensitic phase

A. Sozinov, A. A. Likhachev, N. Lanska, and K. Ullakko

Appl. Phys. Lett. 80, 1746 (2002); http://dx.doi.org/10.1063/1.1458075 (3 pages) | Cited 529 times

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Giant magnetic-field-induced strain of about 9.5% was observed at ambient temperature in a magnetic field of less than 1 T in NiMnGa orthorhombic seven-layered martensitic phase. The strain proved to be caused by magnetic-field-controlled twin boundary motion. According to an analysis of x-ray diffraction data, the crystal structure of this phase is nearly orthorhombic, having lattice parameters a = 0.619 nm, b = 0.580 nm, and c = 0.553 nm (in cubic parent phase coordinates) at ambient temperature. Seven-layer shuffling-type modulation along the (110)[1math0]p system was recorded. The results of mechanical tests and magnetic anisotropy property measurements are also reported. © 2002 American Institute of Physics.
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75.80.+q Magnetomechanical effects, magnetostriction
81.05.Bx Metals, semimetals, and alloys
61.66.Dk Alloys
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.72.Mm Grain and twin boundaries
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Cr Saturation moments and magnetic susceptibilities
62.20.F- Deformation and plasticity

Microstructure-controlled magnetic properties of the bulk glass-forming alloy Nd60Fe30Al10

S. Schneider, A. Bracchi, K. Samwer, M. Seibt, and P. Thiyagarajan

Appl. Phys. Lett. 80, 1749 (2002); http://dx.doi.org/10.1063/1.1458070 (3 pages) | Cited 46 times

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We report a combination of analytical transmission electron microscopy, small angle neutron scattering, and studies of magnetic properties of the glass-forming alloy Nd60Fe30Al10. These investigations show the existence of an in situ formed finely dispersed nanocrystalline Nd-rich phase embedded in a Fe-rich glassy matrix of a bulk sample. The crystalline phase forms an extended network over the whole sample but its volume fraction is small compared to that of compact phase. Small angle neutron scattering data exhibit power law behavior with an exponent of −2.5 indicating the formation of a mass fractal. The microstructure observed may be related to phase separation in the undercooled liquid which induces a microstructure that can explain the hard magnetic behavior of such an intrinsic composite. © 2002 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Bb Fe and its alloys
75.50.Tt Fine-particle systems; nanocrystalline materials
61.43.Fs Glasses
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
64.75.-g Phase equilibria
75.50.Ww Permanent magnets
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)

980 nm excited upconversion in an Er-doped ZnO–TeO2 glass

Fiorenzo Vetrone, John-Christopher Boyer, John A. Capobianco, Adolfo Speghini, and Marco Bettinelli

Appl. Phys. Lett. 80, 1752 (2002); http://dx.doi.org/10.1063/1.1458073 (3 pages) | Cited 68 times

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In this letter, we investigate the upconversion properties of 19ZnO–80TeO2–1Er2O3 glass after excitation into the 4I11/2 level using 980 nm radiation. At an excitation power density of 880 W/cm2, green emission [(2H11/2, 4S3/2)→4I15/2] dominates the upconversion spectrum with an efficiency of 0.16%. Temporal studies reveal that the 4I11/2 level is the intermediate state by which the two-step upconversion process occurs. Excited-state absorption and phonon-assisted energy transfer are discussed as possible mechanisms for the upconversion. © 2002 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
42.70.Ce Glasses, quartz
78.40.Ha Other nonmetallic inorganics

Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates

N. Nordell, O. Bowallius, S. Anand, A. Kakanakova-Georgieva, R. Yakimova, L. D. Madsen, S. Karlsson, and A. O. Konstantinov

Appl. Phys. Lett. 80, 1755 (2002); http://dx.doi.org/10.1063/1.1458048 (3 pages) | Cited 3 times

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SiC was grown around stripe mesas, oriented along the 〈11math0〉 and 〈1math00〉 lattice directions on 4H SiC substrates. The grown layers were investigated with respect to polytype homogeneity by using cathodoluminescence. It was found that 3C inclusions rarely occur at normal growth conditions. However, 3C inclusions were prevalent at low growth temperatures and high C:Si ratios at the mesa tops, where the (0001) plane is revealed during growth. The doping distribution was recorded on cleaved mesa cross sections by using scanning capacitance spectroscopy. It was found that the p-type doping (using Al as the dopant) was considerably lower at the mesa walls than on the mesa tops or between the mesas, while the n-type doping (using N as the dopant) was independent of the substrate geometry. © 2002 American Institute of Physics.
Show PACS
61.72.up Other materials
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification
61.72.Qq Microscopic defects (voids, inclusions, etc.)
78.66.Li Other semiconductors
81.05.Hd Other semiconductors
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