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11 Mar 2002

Volume 80, Issue 10, pp. 1683-1849

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Characteristics of surface acoustic wave convolver in the monolithic metal–zinc oxide–silicon nitride–silicon dioxide–silicon structure

B. S. Panwar

Appl. Phys. Lett. 80, 1832 (2002); http://dx.doi.org/10.1063/1.1456264 (3 pages) | Cited 2 times

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The nonlinear analysis of the metal–insulator semiconductor shows that the ac currents charging the interface traps lead to large dc operating voltage and an inefficient operation of the monolithic convolvers. These interface traps are annihilated during a low temperature anneal, which utilizes hydrogen atoms implanted underneath the SiO2–Si interface. The overlay piezoelectric ZnO film in the metal–ZnO–Si3N4–SiO2–Sistructure is protected from the influx of hydrogen atoms by an interposed silicon nitride layer. Hydrogen implantation and rapid thermal annealing steps are integrated in the process sequence of realizing an efficient metal–ZnO–Si3N4–SiO2–Si monolithic surface acoustic wave convolver. © 2002 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Cd Deposition by sputtering
81.40.Gh Other heat and thermomechanical treatments
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.05.Dz II-VI semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Mark shapes in hybrid recording

P. Herget, T. Rausch, A. C. Shiela, D. D. Stancil, T. E. Schlesinger, J.-G. Zhu, and J. A. Bain

Appl. Phys. Lett. 80, 1835 (2002); http://dx.doi.org/10.1063/1.1454230 (3 pages) | Cited 2 times

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We describe the theoretical and experimental investigation of mark shapes in thermally assisted or hybrid recording. The effect of alignment was studied by recording marks on perpendicular TbFeCo media using a commercial recording head and 840 nm laser. We found that mark shapes are primarily controlled through laser/head alignment, and that maximally straight transitions are obtained by placing the laser spot on the leading pole tip near the gap. Simulations of the recording process confirm the experimental findings and are used in conjunction with static write contours to show how transitions form. © 2002 American Institute of Physics.
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85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.70.Sq Magnetooptical devices
75.50.Ss Magnetic recording materials

Evaluation of thermal parameters of bolometer devices

P. Neuzil and T. Mei

Appl. Phys. Lett. 80, 1838 (2002); http://dx.doi.org/10.1063/1.1458686 (3 pages) | Cited 6 times

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Thermal conductance G, thermal capacitance H, and the time constant τ are major parameters to be determined in the design of bolometer devices and, therefore, it is an important task to evaluate these thermal parameters experimentally for design verification. In this work, a technique has been developed to determine these parameters with high accuracy by convenient electrical measurement where a high-voltage short-duration pulse was used. The method also incorporates operation conditions in the measurement and thus reveals the bias dependency of the thermal parameters. The approach was experimentally confirmed by using metal–film microbolometer devices with different values of both G and H. Test results were in a good agreement with the theoretical analysis of the measurement technique. © 2002 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

L.-E. Wernersson, M. Borgström, B. Gustafson, A. Gustafsson, I. Pietzonka, M.-E. Pistol, T. Sass, W. Seifert, and L. Samuelson

Appl. Phys. Lett. 80, 1841 (2002); http://dx.doi.org/10.1063/1.1459113 (3 pages) | Cited 5 times

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We have studied GaP/GaAs/GaP and GaAsxP1−x/GaAs/GaAsxP1−x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1−x/GaAs/GaAsxP1−x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5. © 2002 American Institute of Physics.
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85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.05.Ea III-V semiconductors
73.23.-b Electronic transport in mesoscopic systems
73.61.Ey III-V semiconductors
68.55.-a Thin film structure and morphology

Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature

M. Fujiwara, M. Sasaki, and M. Akiba

Appl. Phys. Lett. 80, 1844 (2002); http://dx.doi.org/10.1063/1.1461421 (3 pages) | Cited 13 times

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A GaAs junction field-effect transistor (JFET) is a promising candidate for low-frequency, low-noise, and low-power cryogenic electronics to read out high-impedance photodetectors. We report on the spectral noise characteristics of a SONY n-type GaAs JFET, operating at the depression mode, at a cryogenic temperature of 4.2 K. If the GaAs JFET is turned on at 4.2 K, a random telegraph signal (RTS) is found to be the dominant noise source at low frequencies. However, the switching rate of RTS can be drastically reduced if the GaAs JFET is heated up to 55 K and cooled down again to 4.2 K while keeping the same drain current flow. We refer to this phenomenon as the thermal cure (TC). With TC, low-frequency noise can be reduced to below 1 μV/Hz1/2 at 1 Hz. The critical temperature for TC is found to be ∼35 K for our GaAs JFET. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices

Electro-optical characteristics and switching behavior of a twisted nematic liquid crystal device based upon in-plane switching

Shinichirou Oka, Munehiro Kimura, and Tadashi Akahane

Appl. Phys. Lett. 80, 1847 (2002); http://dx.doi.org/10.1063/1.1459764 (3 pages) | Cited 12 times

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A driving mechanism for a twisted nematic liquid crystal device that could possibly improve the viewing-angle characteristics and the cell gap error margin is proposed. It is important that the surface azimuthal anchoring strength of the liquid crystal cell differs at the upper and lower substrates, unlike a conventional twisted nematic (TN) mode. Electro-optical characteristics were investigated with an electric field applied in the plane of the substrates. It is numerically demonstrated and predicted that the proposed driving mechanism can have both the desirable features of in-plane switching mode (such as an excellent viewing angle) and those of a conventional TN type device (such as a small color shift and wide cell gap margin). © 2002 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
42.70.Df Liquid crystals
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