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11 Mar 2002

Volume 80, Issue 10, pp. 1683-1849

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Electrical and dielectric behavior of MgO doped Ba0.7Sr0.3TiO3 thin films on Al2O3 substrate

S. Y. Lee and T. Y. Tseng

Appl. Phys. Lett. 80, 1797 (2002); http://dx.doi.org/10.1063/1.1458067 (3 pages) | Cited 41 times

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In this letter, we present the results of the fabrication and characterization of 5 mol % MgO doped Ba0.7Sr0.3TiO3 (BST) films grown on Pt/TiN/SiO2 coated on Al2O3 substrates using the rf magnetron sputtering technique. The dielectric and electrical properties of Ba0.7Sr0.3TiO3 thin film were found to improve obviously by means of MgO doping. The leakage current density of BST thin film decreased about 1 order of magnitude on MgO doping, while BST film with MgO doping had a higher dielectric constant than that without MgO doping. The dielectric constant of the films increased with increasing annealing temperature due to the consistent increase in grain size and crystallinity. The 750 °C annealed, 100 nm thick film indicated a high dielectric constant of 440 at 100 kHz and the lattice constant of 3.986 Å. The improvement of the electrical properties of BST films was associated with the reduced oxygen vacancies due to improved oxygenation of BST films in the presence of MgO. The MgO doped BST films exhibited a high tunability of 25% and dc resistivity of 6×1010 Ω cm at an applied electric field of 200 kV/cm. The time-dependent dielectric breakdown studies indicated that the films had a longer lifetime of over 10 yrs on operation at the electric field of 0.4 MV/cm which is better than undoped BST film. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
81.15.Cd Deposition by sputtering
77.22.Jp Dielectric breakdown and space-charge effects
61.72.J- Point defects and defect clusters

Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric

E. Anulekha Manjari, A. Subrahmanyam, N. DasGupta, and A. DasGupta

Appl. Phys. Lett. 80, 1800 (2002); http://dx.doi.org/10.1063/1.1458065 (3 pages) | Cited 2 times

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Xerogel films have been prepared on p-type silicon (pSi) substrates by the sol–gel process using hexamethyldisilazane for surface modification. The dielectric constants of the films are in the range of 1.9–2.5. Detailed electrical characterization has been carried out using an aluminum–xerogel–pSi metal–insulator–semiconductor structure. Low values of fixed oxide charges, mobile oxide charges, and interface state densities have been obtained. The low leakage current density and high breakdown field strength of these films make them suitable for intermetal isolation. Very little degradation of the film properties was observed even after 40 days without any capping layer. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
77.55.-g Dielectric thin films
81.05.Rm Porous materials; granular materials
82.70.Gg Gels and sols
81.05.Cy Elemental semiconductors
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
85.30.Tv Field effect devices
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects
81.05.Bx Metals, semimetals, and alloys
85.40.Ls Metallization, contacts, interconnects; device isolation
73.20.At Surface states, band structure, electron density of states

Direct observation of atomic disordering at the SrTiO3/Si interface due to oxygen diffusion

V. Shutthanandan, S. Thevuthasan, Y. Liang, E. M. Adams, Z. Yu, and R. Droopad

Appl. Phys. Lett. 80, 1803 (2002); http://dx.doi.org/10.1063/1.1456261 (3 pages) | Cited 11 times

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The stability of epitaxially grown single crystal SrTiO3(001) thin films on Si(100) substrates was studied as a function of temperature under vacuum and oxygen-rich environments using Rutherford backscattering spectrometry in channeling geometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy. During vacuum annealing, it was found that interfacial silica formed due to diffusion of oxygen from the film to Si. This was further accompanied by the atomic disordering of Sr, Ti, and O sublattices in the film due to reduction reactions. Although the interfacial degradation process is similar during heating in oxygen environment, no disordering of the film was observed. © 2002 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.35.Ct Interface structure and roughness
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
79.60.Jv Interfaces; heterostructures; nanostructures
61.72.Cc Kinetics of defect formation and annealing

Scanning probe microscopy of well-defined periodically poled ferroelectric domain structure

M. Shvebelman, P. Urenski, R. Shikler, G. Rosenman, Y. Rosenwaks, and M. Molotskii

Appl. Phys. Lett. 80, 1806 (2002); http://dx.doi.org/10.1063/1.1456967 (3 pages) | Cited 14 times

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We analyze and determine the factors governing the contrast in contact mode atomic force microscopy of domain-structured ferroelectric crystals. The analysis is applied to measurements conducted on KTiOPO4 crystals with artificially created well-defined domain structure. It is found that the amplitude contrast is due to difference in the work functions of the antiparallel domains. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

In situ x-ray scattering study of PbTiO3 chemical-vapor deposition

M. V. Ramana Murty, S. K. Streiffer, G. B. Stephenson, J. A. Eastman, G.-R. Bai, A. Munkholm, O. Auciello, and Carol Thompson

Appl. Phys. Lett. 80, 1809 (2002); http://dx.doi.org/10.1063/1.1458530 (3 pages) | Cited 15 times

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We present in situ surface x-ray scattering measurements of PbTiO3 epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth conditions. At lower PbO overpressures, we observe a transition to step-flow growth and an increased rate of recovery after growth, indicating a higher surface mobility. © 2002 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
61.05.cf X-ray scattering (including small-angle scattering)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.70.Ck X-ray scattering
68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
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