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11 Mar 2002

Volume 80, Issue 10, pp. 1683-1849

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Dispersion, refinement, and manipulation of single silicon nanowires

J. Z. He, J. B. Xu, M. S. Xu, Z. Xie, I. H. Wilson, X. L. Ma, Q. Li, N. Wang, L. S. Hung, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 80, 1812 (2002); http://dx.doi.org/10.1063/1.1456966 (3 pages) | Cited 1 time

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We have successfully dispersed silicon nanowires in liquid by a mild etching treatment. A transmission electron microscopic study reveals that the etching occurs selectively at the defect sites of the wires. This implies that the treated wires have much fewer defects than those of the raw material. We have adopted an electrophoresis method, which is usually used in biosciences, to mount single nanowires onto chosen electrodes of a prototype device. The mounting of the wires was checked using scanning probe microscopes. Compared with the commonly used microactuation method, our method is far more applicable to industrial device fabrication, which may require simultaneous manipulation of a large number of wires. © 2002 American Institute of Physics.
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68.65.La Quantum wires (patterned in quantum wells)
81.15.Pq Electrodeposition, electroplating
81.05.Cy Elemental semiconductors
81.65.Cf Surface cleaning, etching, patterning
61.46.-w Structure of nanoscale materials
68.37.Ps Atomic force microscopy (AFM)
68.37.Lp Transmission electron microscopy (TEM)

Simple method to prepare individual suspended nanofibers

Gyu-Tae Kim, Gang Gu, Ulrike Waizmann, and Siegmar Roth

Appl. Phys. Lett. 80, 1815 (2002); http://dx.doi.org/10.1063/1.1458533 (3 pages) | Cited 26 times

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A simple and general technique for producing a suspended nanofiber has been developed using coordinate markers and a sacrificial layer of poly(methylmethacrylate). The simple procedure does not involve etching processes or chemical vapor deposition and makes it easier to investigate the physical properties of nanofibers in a suspended configuration. As a demonstration, a suspended carbon nanotube rope was fabricated and Young’s modulus was determined to be 0.4 TPa from the force calibration of an atomic force microscope. © 2002 American Institute of Physics.
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81.07.De Nanotubes
81.07.Bc Nanocrystalline materials
62.20.D- Elasticity
61.46.-w Structure of nanoscale materials

Strongly capacitively coupled quantum dots

I. H. Chan, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard

Appl. Phys. Lett. 80, 1818 (2002); http://dx.doi.org/10.1063/1.1456552 (3 pages) | Cited 5 times

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Double quantum dots were formed in a gated GaAs/AlGaAs heterostructure with negligible interdot tunneling; strong capacitive coupling was provided by a floating interdot capacitor. The interdot capacitance was measured to be 0.28CΣ, where CΣ is the single-dot capacitance. Coulomb blockade conductance images for both dots versus side gate voltages at 70 mK show a hexagonal pattern of peaks; the double dot acts as a single-electron current switch. For weak tunneling, the conductance peaks of both dots fit thermally broadened line shapes. Charge fluctuations produced by strong tunneling on one dot are induced on the second, filling in its peak splitting. © 2002 American Institute of Physics.
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73.63.Kv Quantum dots
73.23.Hk Coulomb blockade; single-electron tunneling

Field emission from well-aligned carbon nanotips grown in a gated device structure

C. L. Tsai, C. F. Chen, and C. L. Lin

Appl. Phys. Lett. 80, 1821 (2002); http://dx.doi.org/10.1063/1.1459109 (2 pages) | Cited 13 times

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Vertically well-aligned, high-aspect-ratio carbon nanotips have been directly grown upward on the gated device structure with 4 μm gate aperture. The nanotips rapidly nucleate and grow without any catalyst. In addition, selected area deposition of nanotips is achieved by using a Pt layer as inhibitor in the bias-assisted microwave plasma chemical vapor deposition. The field emission current of nanotips on the gated structure is 154 μA (at a gate-to-cathode voltage of Vgc = 50 V). This results from the following reasons: (i) short gate-tips spacing, (ii) small gate aperture, and (iii) the high-aspect ratio of nanotips. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
85.45.Db Field emitters and arrays, cold electron emitters
81.07.De Nanotubes
85.35.Kt Nanotube devices
61.46.-w Structure of nanoscale materials
73.63.Fg Nanotubes

Growth and properties of Cu3N films and Cu3N/γ′-Fe4N bilayers

D. M. Borsa, S. Grachev, C. Presura, and D. O. Boerma

Appl. Phys. Lett. 80, 1823 (2002); http://dx.doi.org/10.1063/1.1459116 (3 pages) | Cited 34 times

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Copper nitride films were grown by molecular-beam epitaxy of copper in the presence of nitrogen from a radio-frequency atomic source on (001) γ′-Fe4N/(001)MgO or directly on MgO substrates. The structural properties of the Cu3N films were found to be very dependent on the substrate and on the deposition temperature. At optimal growth conditions, the Cu3N films grow epitaxial on both substrates. The Cu3N films grown on MgO were characterized optically to be insulators with an energy gap of 1.65 eV. On γ′-Fe4N, Cu3N films with a thickness of only 6 nm, were grown as closed layers, epitaxial and rather smooth (root-mean-square roughness of 0.7 nm). This material has ideal properties to be used as a barrier in low resistance magnetic tunnel junctions. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
71.20.Ps Other inorganic compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.61.Ng Insulators
78.66.Nk Insulators
68.35.B- Structure of clean surfaces (and surface reconstruction)

Resonant light scattering from individual Ag nanoparticles and particle pairs

Hiroharu Tamaru, Hitoshi Kuwata, Hideki T. Miyazaki, and Kenjiro Miyano

Appl. Phys. Lett. 80, 1826 (2002); http://dx.doi.org/10.1063/1.1461072 (3 pages) | Cited 93 times

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Light scattering by individual Ag nanoparticles and structures have been studied spectroscopically. Individual particles were selected and manipulated with a micromanipulator installed inside a scanning electron microscope (SEM). With typical particle dimensions of some 100 nm, the plasma resonances of particles and the coupled modes of particle pairs were observed in the visible region. The polarization dependence of the resonance frequencies strongly reflects the shape anisotropy; the effect that would be averaged out for experiments on ensembles. With a simple approximation to take the glass substrate into account, the results are in good agreement with the analytical calculations by Mie scattering, and with numerical calculations by the finite-difference time-domain method, both of which are performed with the morphological parameters obtained from the SEM observation for the corresponding particle or particle pair. © 2002 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.35.+c Brillouin and Rayleigh scattering; other light scattering
73.22.Lp Collective excitations
78.40.Kc Metals, semimetals, and alloys
61.46.-w Structure of nanoscale materials

Correlation of surface molecular composition to nanoscale elastic behavior and topography of stretched polyurethane films

E. Amitay-Sadovsky, K. Komvopoulos, Y. Tian, and G. A. Somorjai

Appl. Phys. Lett. 80, 1829 (2002); http://dx.doi.org/10.1063/1.1458526 (3 pages) | Cited 4 times

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Correlation of the surface molecular composition with the nanoscale elastic behavior and topography of stretched polyurethane films was examined by surface-specific techniques, such as sum frequency generation (SFG) vibrational spectroscopy and atomic force microscopy (AFM). Identification of the SFG spectra of the soft and hard copolymer segments elucidated changes in the molecular composition due to stretching. The surface molecular composition is correlated to AFM results for the roughness and elastic modulus. It is shown that, in addition to molecular reorientation, stretching promotes exposure of hard segments at the surface, and that this is a continuous time-dependent process at constant elongation. © 2002 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
68.37.Ps Atomic force microscopy (AFM)
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
63.50.-x Vibrational states in disordered systems
62.20.D- Elasticity
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