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11 Mar 2002

Volume 80, Issue 10, pp. 1683-1849

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Effect of N2O plasma treatment on the stabilization of water absorption in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition

S. P. Kim, S. K. Choi, Youngsoo Park, and Ilsub Chung

Appl. Phys. Lett. 80, 1728 (2002); http://dx.doi.org/10.1063/1.1458528 (3 pages) | Cited 2 times

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The variation of residual stress with the water absorption was reduced drastically by the N2O plasma treatment for fluorinated silicon-oxide thin films. Fourier transformed infrared spectroscopy analysis showed that the film was oxidized by the plasma treatment. It was also determined that the oxidation occurred on the film surface from the P-etch rate and x-ray photoelectron spectroscopy analysis. The experimental results show that the stabilization results from the oxidation of the surface by the N2O plasma treatment. © 2002 American Institute of Physics.
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81.65.Mq Oxidation
52.77.-j Plasma applications
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
78.30.Hv Other nonmetallic inorganics
79.60.Dp Adsorbed layers and thin films
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Optical properties of the deep Mn acceptor in GaN:Mn

R. Y. Korotkov, J. M. Gregie, and B. W. Wessels

Appl. Phys. Lett. 80, 1731 (2002); http://dx.doi.org/10.1063/1.1456544 (3 pages) | Cited 81 times

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The optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-temperature optical absorption measurements indicate the presence of a Mn-related band with a well-resolved fine structure. The zero-phonon line is at 1.418±0.002 eV with a full width at half maximum of 20±1 meV. Two pseudolocal vibrational modes associated with manganese were observed with energies of hv1 = 20 and hv2 = 73 meV. Deep-level optical spectroscopy measurements on lightly Mn-doped samples indicate that Mn forms a deep acceptor level at Ev+1.42 eV. Using the vacuum referred binding energy model for transition metals and the measured Mn energy level, the electron affinity of GaN is calculated to be 3.4 eV, which agrees well with experimental values. © 2002 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
71.55.Eq III-V semiconductors
63.20.Pw Localized modes

Photoinduced stress in hydrogenated amorphous silicon films

E. Stratakis, E. Spanakis, P. Tzanetakis, H. Fritzsche, S. Guha, and J. Yang

Appl. Phys. Lett. 80, 1734 (2002); http://dx.doi.org/10.1063/1.1458068 (3 pages) | Cited 10 times

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Photo-induced compressive stress ΔS in hydrogenated amorphous silicon (a-Si:H) has been studied using films deposited by plasma-enhanced or hot-wire chemical vapor deposition on crystalline silicon microcantilevers. The kinetics of ΔS(t) first rises with exposure time as t0.5 and follows a stretched exponential. The saturation values ΔSsat correspond to volume changes of about 10−3, which excludes the possibility that ΔS is a consequence of the light-induced creation of coordination defects. The highest-quality films have large initial stress, small values of the Young’s modulus, and a rapid approach of ΔS(t) towards saturation. © 2002 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
81.05.Cy Elemental semiconductors
68.55.-a Thin film structure and morphology
62.20.D- Elasticity

Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Scott T. Huxtable, Alexis R. Abramson, Chang-Lin Tien, Arun Majumdar, Chris LaBounty, Xiaofeng Fan, Gehong Zeng, John E. Bowers, Ali Shakouri, and Edward T. Croke

Appl. Phys. Lett. 80, 1737 (2002); http://dx.doi.org/10.1063/1.1455693 (3 pages) | Cited 91 times

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The cross-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattices and three Si0.84Ge0.16/Si0.76Ge0.24 superlattices, with periods ranging from 45 to 300 and from 100 to 200 Å, respectively, were measured over a temperature range of 50 to 320 K. For the Si/Si0.7Ge0.3 superlattices, the thermal conductivity was found to decrease with a decrease in period thickness and, at a period thickness of 45 Å, it approached the alloy limit. For the Si0.84Ge0.16/Si0.76Ge0.24 samples, no dependence on period thickness was found and all the data collapsed to the alloy value, indicating the dominance of alloy scattering. This difference in thermal conductivity behavior between the two superlattices was attributed to interfacial acoustic impedance mismatch, which is much larger for Si/Si0.7Ge0.3 than for Si0.84Ge0.16/Si0.76Ge0.24. The thermal conductivity increased slightly up to about 200 K, but was relatively independent of temperature from 200 to 320 K. © 2002 American Institute of Physics.
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68.65.Cd Superlattices
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
68.35.Ct Interface structure and roughness
68.35.Iv Acoustical properties
81.05.Cy Elemental semiconductors

Radiative recombination mechanism in GaNxP1−x alloys

I. A. Buyanova, G. Yu. Rudko, W. M. Chen, H. P. Xin, and C. W. Tu

Appl. Phys. Lett. 80, 1740 (2002); http://dx.doi.org/10.1063/1.1455144 (3 pages) | Cited 34 times

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Based on the results of temperature-dependent photoluminescence (PL) and absorption measurements, the PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures with N composition up to 4% is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition, these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent redshift of the PL maximum position. © 2002 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.67.De Quantum wells
73.25.+i Surface conductivity and carrier phenomena

Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

S. Eguchi, J. L. Hoyt, C. W. Leitz, and E. A. Fitzgerald

Appl. Phys. Lett. 80, 1743 (2002); http://dx.doi.org/10.1063/1.1458047 (3 pages) | Cited 22 times

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The diffusion behavior of ion-implanted arsenic and phosphorus in relaxed Si0.8Ge0.2 has been investigated. Under equilibrium, extrinsic conditions, both dopants are observed to diffuse faster in SiGe than in Si. Simulations of the measured profiles suggest that the ratio of the effective diffusivity in Si0.8Ge0.2 compared to that in Si is roughly seven for arsenic, and roughly two for phosphorus. Under transient diffusion conditions, the arsenic diffusivity in SiGe is retarded, and the magnitude of the diffusion is roughly the same as that in Si. This result suggests that it is possible to optimize the diffusion conditions to achieve n+ source/drain junctions that are as shallow in SiGe as in Si. © 2002 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Giant magnetic-field-induced strain in NiMnGa seven-layered martensitic phase

A. Sozinov, A. A. Likhachev, N. Lanska, and K. Ullakko

Appl. Phys. Lett. 80, 1746 (2002); http://dx.doi.org/10.1063/1.1458075 (3 pages) | Cited 534 times

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Giant magnetic-field-induced strain of about 9.5% was observed at ambient temperature in a magnetic field of less than 1 T in NiMnGa orthorhombic seven-layered martensitic phase. The strain proved to be caused by magnetic-field-controlled twin boundary motion. According to an analysis of x-ray diffraction data, the crystal structure of this phase is nearly orthorhombic, having lattice parameters a = 0.619 nm, b = 0.580 nm, and c = 0.553 nm (in cubic parent phase coordinates) at ambient temperature. Seven-layer shuffling-type modulation along the (110)[1math0]p system was recorded. The results of mechanical tests and magnetic anisotropy property measurements are also reported. © 2002 American Institute of Physics.
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75.80.+q Magnetomechanical effects, magnetostriction
81.05.Bx Metals, semimetals, and alloys
61.66.Dk Alloys
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.72.Mm Grain and twin boundaries
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Cr Saturation moments and magnetic susceptibilities
62.20.F- Deformation and plasticity

Microstructure-controlled magnetic properties of the bulk glass-forming alloy Nd60Fe30Al10

S. Schneider, A. Bracchi, K. Samwer, M. Seibt, and P. Thiyagarajan

Appl. Phys. Lett. 80, 1749 (2002); http://dx.doi.org/10.1063/1.1458070 (3 pages) | Cited 47 times

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We report a combination of analytical transmission electron microscopy, small angle neutron scattering, and studies of magnetic properties of the glass-forming alloy Nd60Fe30Al10. These investigations show the existence of an in situ formed finely dispersed nanocrystalline Nd-rich phase embedded in a Fe-rich glassy matrix of a bulk sample. The crystalline phase forms an extended network over the whole sample but its volume fraction is small compared to that of compact phase. Small angle neutron scattering data exhibit power law behavior with an exponent of −2.5 indicating the formation of a mass fractal. The microstructure observed may be related to phase separation in the undercooled liquid which induces a microstructure that can explain the hard magnetic behavior of such an intrinsic composite. © 2002 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Bb Fe and its alloys
75.50.Tt Fine-particle systems; nanocrystalline materials
61.43.Fs Glasses
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
64.75.-g Phase equilibria
75.50.Ww Permanent magnets
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)

980 nm excited upconversion in an Er-doped ZnO–TeO2 glass

Fiorenzo Vetrone, John-Christopher Boyer, John A. Capobianco, Adolfo Speghini, and Marco Bettinelli

Appl. Phys. Lett. 80, 1752 (2002); http://dx.doi.org/10.1063/1.1458073 (3 pages) | Cited 68 times

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In this letter, we investigate the upconversion properties of 19ZnO–80TeO2–1Er2O3 glass after excitation into the 4I11/2 level using 980 nm radiation. At an excitation power density of 880 W/cm2, green emission [(2H11/2, 4S3/2)→4I15/2] dominates the upconversion spectrum with an efficiency of 0.16%. Temporal studies reveal that the 4I11/2 level is the intermediate state by which the two-step upconversion process occurs. Excited-state absorption and phonon-assisted energy transfer are discussed as possible mechanisms for the upconversion. © 2002 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
42.70.Ce Glasses, quartz
78.40.Ha Other nonmetallic inorganics

Polytype homogeneity and doping distribution in homoepitaxial 4H SiC grown on nonplanar substrates

N. Nordell, O. Bowallius, S. Anand, A. Kakanakova-Georgieva, R. Yakimova, L. D. Madsen, S. Karlsson, and A. O. Konstantinov

Appl. Phys. Lett. 80, 1755 (2002); http://dx.doi.org/10.1063/1.1458048 (3 pages) | Cited 3 times

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SiC was grown around stripe mesas, oriented along the 〈11math0〉 and 〈1math00〉 lattice directions on 4H SiC substrates. The grown layers were investigated with respect to polytype homogeneity by using cathodoluminescence. It was found that 3C inclusions rarely occur at normal growth conditions. However, 3C inclusions were prevalent at low growth temperatures and high C:Si ratios at the mesa tops, where the (0001) plane is revealed during growth. The doping distribution was recorded on cleaved mesa cross sections by using scanning capacitance spectroscopy. It was found that the p-type doping (using Al as the dopant) was considerably lower at the mesa walls than on the mesa tops or between the mesas, while the n-type doping (using N as the dopant) was independent of the substrate geometry. © 2002 American Institute of Physics.
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61.72.up Other materials
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification
61.72.Qq Microscopic defects (voids, inclusions, etc.)
78.66.Li Other semiconductors
81.05.Hd Other semiconductors
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