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Applied Physics Letters / Volume 80 / Issue 14 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 80, 2445 (2002); http://dx.doi.org/10.1063/1.1467697 (3 pages)

Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio

T. Takeuchi1, Y.-L. Chang1, A. Tandon1, D. Bour1, S. Corzine1, R. Twist1, M. Tan1, and H.-C. Luan2

1Agilent Technologies Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
2Agilent Technologies, 350 West Trimble Road, San Jose, CA 95131

(Received 28 November 2001; accepted 6 February 2002)

We have achieved 160 A/cm2 threshold current density of a 1.21 μm InGaAs/GaAs quantum well (QW) laser grown under a very low As/III ratio. We investigated the As/III ratio dependence on the optical quality of InGaAs QWs grown with arsine and tertiarybutylarsine (TBA). We found that TBA allows us to grow high quality InGaAs QWs under a very low As/III ratio (∼3), while a higher As/III ratio (∼10) with arsine is necessary to obtain the similar quality QWs. This high quality InGaAs QW grown under the low As/III ratio leads to the realization of high quality InGaAsN QW which should be grown under a low As/III ratio and a high N/V ratio. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, III-V semiconductors, quantum well lasers, gallium arsenide, laser transitions, current density, photoluminescence, MOCVD, semiconductor growth

PACS

  • 42.60.By

    Design of specific laser systems

  • 81.07.St

    Quantum wells

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 78.67.De

    Quantum wells

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 78.55.Cr

    III-V semiconductors

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1467697

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. H. Chen, C. A. Larsen, and G. B. Stringfellow, Appl. Phys. Lett. 50, 218 (1987)APPLAB000050000004000218000001.


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