APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Apr 2002

Volume 80, Issue 14, pp. 2433-2611

Return to All Sections
back to top
RSS Feeds

Polarization charges at spontaneously ordered (In, Ga)P/GaAs interfaces

P. Krispin, A. Knauer, and S. Gramlich

Appl. Phys. Lett. 80, 2493 (2002); http://dx.doi.org/10.1063/1.1467978 (3 pages) | Cited 3 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The depth-resolved electrical characteristics of n- and p-type GaAs/(In, Ga)P/GaAs heterojunctions are examined by capacitance–voltage measurements. Different epitaxial growth conditions are chosen to produce heterointerfaces with (In, Ga)P layers of various degrees of order. Irrespective of the conduction type of the heterojunction studied, we find positive [negative] sheet charges at the (In, Ga)P-on-GaAs [GaAs-on-(In, Ga)P] interfaces. The density of both interfacial charges increases with increasing degree of (In, Ga)P order. The experimental results can be completely explained by taking into account the spontaneous polarization of ordered (In, Ga)P. The polarization difference between ordered (In, Ga)P and GaAs (no polarization) results in opposite sheet charges at the two complementary interfaces with GaAs, in accordance with theoretical predictions. © 2002 American Institute of Physics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
77.22.Ej Polarization and depolarization

Room-temperature 1.54-μm electroluminescence from the Au/nanometer (SiO2:Er/Si/SiO2:Er)/n+-Si structure

Y. Chen, G. Z. Ran, L. Dai, B. R. Zhang, G. G. Qin, Z. C. Ma, and W. H. Zong

Appl. Phys. Lett. 80, 2496 (2002); http://dx.doi.org/10.1063/1.1467623 (3 pages) | Cited 5 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The (SiO2:Er/Si/SiO2:Er) nanometer sandwich structure, in which the thickness of the Si layer between the two SiO2:Er barriers was varied from 1.0 to 4.0 nm with an interval of 0.2 nm, was deposited on both n+-Si and p-Si substrates using the magnetron sputtering technique. Electroluminescence (EL) from the Au/(SiO2:Er/Si/SiO2:Er) nanometer sandwich /n+-Si diodes under reverse biases has been observed. The EL spectrum of each diode can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 μm), 0.806 eV (1.54 μm), and 0.860 eV (1.44 μm), and full widths at half maximum of 0.052 eV, 0.045 eV, and 0.055 eV, respectively. The marked effect of the nanometer Si layer with suitable thickness on enhancing the EL from the Er3+ in the SiO2 layers has been demonstrated. Among the diodes with Si layers having various thicknesses, the intensities of the 1.64-, 1.54-, and 1.44-μm bands of the diode with a 1.6-nm Si layer attain maxima which are 22, 8, and 7 times larger than those of the control diode without any Si layer, respectively. © 2002 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.60.Fi Electroluminescence
68.65.Ac Multilayers

Interface-controlled gate of GaAs metal–semiconductor field-effect transistor

Min-Gu Kang, Hyung-Ho Park, and Haecheon Kim

Appl. Phys. Lett. 80, 2499 (2002); http://dx.doi.org/10.1063/1.1467975 (3 pages) | Cited 4 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A two-step passivation using sulfidation and hydrogenation has been reported to improve the gate leakage current and breakdown voltage of the GaAs metal–semiconductor field-effect transistor (MESFET). The combination of S passivation and interfacial hydrogenation was applied to the gate line in the MESFET; leakage current was reduced over an order and breakdown voltage was improved to a maximum level of 14 V from 10 V. It was revealed that the improvement of device properties after this two-step treatment resulted from the suppression of defective states such as oxides and excess As at the interface of the gate junction. The evolution of their bonding states through the treatment was found to have a close relationship with the device parameters. © 2002 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
81.65.Rv Passivation
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si

Young Hae Kwon, C. J. Park, W. C. Lee, D. J. Fu, Y. Shon, T. W. Kang, C. Y. Hong, H. Y. Cho, and Kang L. Wang

Appl. Phys. Lett. 80, 2502 (2002); http://dx.doi.org/10.1063/1.1467617 (3 pages) | Cited 27 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050 °C for 30 s. Metal–oxide–semiconductor (MOS) structures were fabricated and capacitance–voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29 eV (H1) and Ev+0.42 eV (H2), and the capture cross sections are 4.70×10−16 cm2 and 1.44×10−15 cm2, respectively. The presence of Si�H and Si�H2 bonds was confirmed by Fourier transform infrared spectroscopy. © 2002 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.63.Bd Nanocrystalline materials
73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Cn Elemental semiconductors
81.65.Mq Oxidation
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Am Elemental semiconductors and insulators

Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

V. Ortiz, J. Nagle, and A. Alexandrou

Appl. Phys. Lett. 80, 2505 (2002); http://dx.doi.org/10.1063/1.1463209 (3 pages) | Cited 7 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We study the influence of the carrier dynamics on the transient reflectivity of low-temperature-grown GaAs samples. We report a precise modeling of the recorded reflectivity data, which exhibit multiexponential decays and changes in sign, using a standard point defect model and taking into account the effects of the band filling, band gap renormalization, and trap absorption. We show that the valence-band hole population plays an important role in the behavior of the signals, and that it must be taken into account in order to optimize low-temperature-grown GaAs-based devices. © 2002 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
71.55.Eq III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

L. Hsu and W. Walukiewicz

Appl. Phys. Lett. 80, 2508 (2002); http://dx.doi.org/10.1063/1.1468260 (3 pages) | Cited 21 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have calculated ratios of the transport-to-quantum lifetimes τt/τq of the two-dimensional electron gas in AlGaN/GaN heterostructures at low temperatures. In contrast to conventional interpretations, we show that large values of this ratio do not necessarily indicate that long-range scattering mechanisms such as Coulomb scattering are the dominant carrier scattering mechanisms and that large ratios (>20) can be obtained even when short-range scattering mechanisms are dominant. © 2002 American Institute of Physics.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.63.Hs Quantum wells
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
68.35.Ct Interface structure and roughness

Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy

F. Barbo, M. Bertolo, A. Bianco, G. Cautero, S. Fontana, T. K. Johal, S. La Rosa, R. C. Purandare, N. Svetchnikov, A. Franciosi, D. Orani, M. Piccin, S. Rubini, and R. Cimino

Appl. Phys. Lett. 80, 2511 (2002); http://dx.doi.org/10.1063/1.1468264 (3 pages) | Cited 1 time

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An important application of photoemission spectromicroscopy would be to measure heterostructures and semiconductor devices in cross section to directly determine band offsets and band bending. We present here studies of p-n GaAs homojunctions and Al/GaAs Schottky junctions fabricated by molecular-beam epitaxy. Our results suggest that a minimum experimental uncertainty of about 0.15 eV will effect band offset determination. In general, useful quantitative information on the junction electrostatics can be obtained provided that the experimental data are analyzed to substract the diffuse photon background and take into account the intensity profile of the photon spot. © 2002 American Institute of Physics.
Show PACS
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
68.35.Ct Interface structure and roughness
73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

Dae-Gyu Park, Kwan-Yong Lim, Heung-Jae Cho, Tae-Ho Cha, In-Seok Yeo, Jae-Sung Roh, and Jin Won Park

Appl. Phys. Lett. 80, 2514 (2002); http://dx.doi.org/10.1063/1.1468273 (3 pages) | Cited 24 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the impact of atomic-layer-deposited TiN gate on the characteristics of W/TiN/SiO2/p-Si metal–oxide–semiconductor (MOS) systems. Damage-free gate oxide quality was attained with atomic-layer-deposition (ALD)–TiN as manifested by an excellent interface trap density (Dit) as low as ∼ 4×1010 eV−1 cm−2 near the Si midgap. ALD–TiN improved the Dit level of MOS systems on both thin SiO2 and high-permittivity (high-k) gate dielectrics. The leakage current of a MOS capacitor gated with ALD–TiN is remarkably lower than that with sputter-deposited TiN and poly-Si gate at the similar capacitance equivalent thickness (CET). Less chlorine content in ALD–TiN films appears to be pivotal in minimizing the CET increase against postmetal anneal and improving gate oxide reliability, paving a way for the direct metal gate process. © 2002 American Institute of Physics.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Sz Deposition technology
84.32.Tt Capacitors

N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

Patrick R. L. Malenfant, Christos D. Dimitrakopoulos, Jeffrey D. Gelorme, Laura L. Kosbar, Teresita O. Graham, Alessandro Curioni, and Wanda Andreoni

Appl. Phys. Lett. 80, 2517 (2002); http://dx.doi.org/10.1063/1.1467706 (3 pages) | Cited 215 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
N,N′-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors. Mobilities up to 0.6 cm2 V−1 s−1 and current on/off ratios >105 were obtained. Linear regime mobilities were typically half of those measured in the saturation regime. X-ray studies in reflection mode suggest a spacing of ∼20 Å for thin evaporated films of PTCDI-C8H, which is consistent with the value of ∼ 21±2 Å obtained from our simulations when an interdigitated packing structure is assumed. © 2002 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices

Enhancement of photoluminescence by microdisk formation from Si/Ge/Si single quantum wells

Suk-Ho Choi, Jung Nam Kim, Hea Young Kim, Young-Kyu Hong, Ja-Yong Koo, JangHyeon Seok, and JaeYon Kim

Appl. Phys. Lett. 80, 2520 (2002); http://dx.doi.org/10.1063/1.1468918 (3 pages) | Cited 3 times

Online Publication Date: 2 April 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A significant enhancement of photoluminescence (PL) intensity is observed in microdisks of 0.5 and 1 μm diam, which have been fabricated from Si/Ge/Si single quantum wells (SQWs) grown by molecular-beam epitaxy. The three major PL peaks found at 0.972, 0.957, and 0.920 eV are identified as a no-phonon transition of localized exciton, associated transverse-acoustical, and transverse-optical phonon replicas in Si, respectively. It is suggested that the formation of microdisks from the Si/Ge/Si SQWs enhances the intrinsic PL transitions significantly by suppressing the impurity-related ones. © 2002 American Institute of Physics.
Show PACS
78.55.Ap Elemental semiconductors
78.67.De Quantum wells
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close