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15 Apr 2002

Volume 80, Issue 15, pp. 2625-2806

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Local fluorescent probes for the fluorescence resonance energy transfer scanning near-field optical microscopy

G. T. Shubeita, S. K. Sekatskii, G. Dietler, and V. S. Letokhov

Appl. Phys. Lett. 80, 2625 (2002); http://dx.doi.org/10.1063/1.1467695 (3 pages) | Cited 7 times

Online Publication Date: 10 April 2002

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We present fluorescence resonance energy transfer (FRET) images of donor dye molecule clusters recorded using a local fluorescence probe for scanning near-field optical microscopy (SNOM): standard apertured SNOM fiber tip coated with the 30–100-nm-thick polymer layer stained with the acceptor dye molecules. The tip works as a “self-sharpening pencil”: the apical layers of the FRET-active tip coating are mechanically worn out during scanning thus continuously exposing a fresh active apex to continue imaging. Only a few tens of acceptor molecules are used to form the optical images, and using such an approach spatial resolution better than the size of the aperture is achievable. © 2002 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
33.50.Dq Fluorescence and phosphorescence spectra

Organic light-emitting diodes with improved hole-electron balance by using copper phthalocyanine/aromatic diamine multiple quantum wells

Yong Qiu, Yudi Gao, Peng Wei, and Liduo Wang

Appl. Phys. Lett. 80, 2628 (2002); http://dx.doi.org/10.1063/1.1468894 (3 pages) | Cited 45 times

Online Publication Date: 10 April 2002

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Organic light-emitting diodes (OLEDs) with multiple-quantum-well structures, which consist of copper phthalocyanine and N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′ biphenyl 4, 4′-diamine, have been fabricated. The effect of the MQW structure upon the performance of OLEDs with tris(8-hydroxyquinoline) aluminum as the emitting material has been investigated. Compared with the luminous efficiency of the conventional diode with the MQW number of 0, that of the diode with the MQW number of 4 has been sharply increased up to 10.8 cd/A. Such an improvement in the device performance was attributed to the improved hole-electron balance, which can be further attributed to the introduction of the MQW structure. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells

Modeling of Q-switched semiconductor lasers based on type-II quantum wells: Increasing the pulse energy and peak power

Jacob B. Khurgin, Igor Vurgaftman, and Jerry R. Meyer

Appl. Phys. Lett. 80, 2631 (2002); http://dx.doi.org/10.1063/1.1468920 (3 pages) | Cited 1 time

Online Publication Date: 10 April 2002

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We propose a semiconductor laser (λ ≈ 1.25 μm) whose active region is a type-II multiple-quantum-well structure (AlGaInAs/AlGaAsSb/AlInAs on InP) to lengthen the free-carrier lifetime. Simulations project an order-of-magnitude enhancement of the Q-switched energy per pulse without increasing the pump current. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Terahertz pulse propagation in a plastic photonic crystal fiber

H. Han, H. Park, M. Cho, and J. Kim

Appl. Phys. Lett. 80, 2634 (2002); http://dx.doi.org/10.1063/1.1468897 (3 pages) | Cited 108 times

Online Publication Date: 10 April 2002

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Guided-wave single-mode propagation of subpicosecond terahertz (THz) pulses in a plastic photonic crystal fiber has been experimentally demonstrated. The plastic photonic crystal fiber is fabricated from high-density polyethylene tubes and filaments. The fabricated fiber exhibits the low loss and relatively low dispersive propagation of THz pulses within the experimental bandwidth of 0.1–3 THz. © 2002 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons
42.70.Jk Polymers and organics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials

Retrieval of the dielectric function of thin films from femtosecond pump-probe experiments

J. Jasapara, M. Mero, and W. Rudolph

Appl. Phys. Lett. 80, 2637 (2002); http://dx.doi.org/10.1063/1.1468893 (3 pages) | Cited 4 times

Online Publication Date: 10 April 2002

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The retrieval of the complex dielectric function from time-resolved pump-probe reflection and transmission experiments on thin films is investigated. A general approach is presented that takes into account interference effects of both the pump and the probe pulse. The influence of the pulse duration is investigated. The retrieval technique is exemplified with experimental data from a Ta2O5 film. © 2002 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.-w Optical properties of specific thin films
77.22.Ch Permittivity (dielectric function)

Lowering of operational voltage of organic electroluminescent devices by coating indium-tin-oxide electrodes with a thin CuOx layer

Wenping Hu, Kaoru Manabe, Takumi Furukawa, and Michio Matsumura

Appl. Phys. Lett. 80, 2640 (2002); http://dx.doi.org/10.1063/1.1469697 (2 pages) | Cited 27 times

Online Publication Date: 10 April 2002

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We devised a method of modifying indium-tin-oxide (ITO) electrodes for organic electroluminescent devices. It consists of deposition of a nanometer-thick Cu layer on the ITO electrode and an oxygen plasma treatment. By this modification, the surface of the ITO substrate is covered with a partly oxidized Cu layer (CuOx). The CuOx-coated ITO electrode possesses strong hole-injection ability, which leads to lowered operational voltage and high luminance from the devices consisting of tris(8-quinolinato)aluminum and diamine hole-transport layers. The hole-injection ability of the CuOx-coated ITO electrode is better than that of the ITO electrode modified by conventional methods, such as insertion of a Cu-phthalocyanine buffer layer. Moreover, the CuOx layer is effective to improve the durability of the devices. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.65.Mq Oxidation
73.61.Le Other inorganic semiconductors
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
73.61.Ph Polymers; organic compounds

Optical and luminescence properties of Sm3+-doped cadmium–aluminum–silicate glasses

H. Lin, E. Y. B. Pun, L. H. Huang, and X. R. Liu

Appl. Phys. Lett. 80, 2642 (2002); http://dx.doi.org/10.1063/1.1468919 (3 pages) | Cited 21 times

Online Publication Date: 10 April 2002

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Sm3+-doped cadmium–aluminum–silicate glasses (CdO–Al2O3–SiO2) have been fabricated and characterized optically. Intense visible lights and near-infrared emissions were observed under ultraviolet light and 488 nm laser excitation. The density, refractive index, optical absorption, Judd–Ofelt parameters, and spontaneous transition probabilities have been measured and calculated. Intense fluorescences at 1.2 and 1.29 μm wavelengths were observed, indicating that the glasses are promising materials for laser and optical amplifier applications operating in the 1.2–1.3 μm low-loss window of telecommunication fiber. © 2002 American Institute of Physics.
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42.70.Ce Glasses, quartz
78.55.Hx Other solid inorganic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Pg Disordered solids

High-efficiency green phosphorescence from spin-coated single-layer dendrimer light-emitting diodes

J. P. J. Markham, S.-C. Lo, S. W. Magennis, P. L. Burn, and I. D. W. Samuel

Appl. Phys. Lett. 80, 2645 (2002); http://dx.doi.org/10.1063/1.1469218 (3 pages) | Cited 89 times

Online Publication Date: 10 April 2002

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We demonstrate very high-efficiency green phosphorescence from a single-layer dendrimer organic light-emitting diode formed by spin-coating. A first generation fac-tris(2-phenylpyridine) iridium cored dendrimer doped into a wide-gap 4,4′-bis(N-carbazole) biphenyl host displays a peak external quantum efficiency of 8.1% (28 Cd/A) at a brightness of 3450 Cd/m2 and a current density of 13.1 mA/cm2. A peak power efficiency of 6.9 lm/W was measured at 1475 Cd/m2 and 5 mA/cm2. We attribute this exceptionally high quantum efficiency for a single-layer device to the excellent film forming properties and high photoluminescence quantum yield of the dendrimer blend and efficient injection of charge into the emissive layer. These results suggest that dendrimers are an effective method for producing efficient phosphorescent devices by spin-coating. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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