Intraband relaxation time is investigated theoretically for a wurtzite InGaN/GaN quantum well (QW) with a (100)
crystal orientation. The results are compared with those of (0001)-oriented QW structures. It is found that the linewidths for the h–h scattering of the (100)
-oriented QW is largely reduced compared to that of the (0001)-oriented QW. This is because the hole effective mass of the (100)
-oriented QW is reduced due to the inclusion of the anisotropic strain in the QW plane. In the case of the (0001)-oriented QW, considering only the h–h scattering near subband edges is a good approximation. On the other hand, in the case of the (100)
-oriented QW, linewidths for the e–e and e–h scatterings are comparable to that for the h–h scattering. The intraband relaxation times near band edges for (0001)- and (100)
-oriented QWs are about 20 and 25 fs at a sheet carrier density of 2×1012 cm−2,
respectively. These values are shorter than those (40–100 fs) reported for InP and GaAs. © 2002 American Institute of Physics.