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Applied Physics Letters / Volume 80 / Issue 16 / INTERDISCIPLINARY AND GENERAL PHYSICS

Appl. Phys. Lett. 80, 3012 (2002); http://dx.doi.org/10.1063/1.1472472 (3 pages)

Multiplexing of radio-frequency single-electron transistors

T. R. Stevenson1, F. A. Pellerano1, C. M. Stahle1, K. Aidala2, and R. J. Schoelkopf2

1NASA Goddard Space Flight Center, Codes 553 and 555, Greenbelt, Maryland 20771
2Department of Applied Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520-8284

(Received 26 July 2001; accepted 1 March 2002)

We present results on wavelength division multiplexing of radio-frequency single-electron transistors. We use a network of resonant impedance matching circuits to direct applied rf carrier waves to different transistors depending on carrier frequency. A two-channel demonstration of this concept using discrete components successfully reconstructed input signals with small levels of crosscoupling. A lithographic version of the rf circuits had measured parameters in agreement with electromagnetic modeling, with reduced crosscapacitance and inductance, and should allow 20–50 channels to be multiplexed. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

single electron transistors, superconducting transistors, photolithography, wavelength division multiplexing, readout electronics, superconducting particle detectors

PACS

  • 85.35.Gv

    Single electron devices

  • 85.40.Hp

    Lithography, masks and pattern transfer

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1472472

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).


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