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22 Apr 2002

Volume 80, Issue 16, pp. 2821-3018

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Designing a heterostructure for the quantum receiver

A. A. Kiselev, K. W. Kim, and E. Yablonovitch

Appl. Phys. Lett. 80, 2857 (2002); http://dx.doi.org/10.1063/1.1472480 (3 pages) | Cited 5 times

Online Publication Date: 16 April 2002

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In this letter, we develop optimal parameters for a structure which is suitable for the realization of a coherent quantum receiver. Conditions including predefined photon wavelength, strain, small Zeeman splitting of the electron levels, and large Zeeman effect for quantum-confined light holes are satisfied simultaneously for the structure based on the InGaAsP solid solutions. We are able to achieve designs with wavelengths of 1.3 and 1.55 μm that are desirable for optoelectronic applications. © 2002 American Institute of Physics.
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42.50.-p Quantum optics
73.21.Fg Quantum wells
78.67.De Quantum wells
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
68.65.Fg Quantum wells

Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy

S. F. Chichibu, A. Tsukazaki, M. Kawasaki, K. Tamura, Y. Segawa, T. Sota, and H. Koinuma

Appl. Phys. Lett. 80, 2860 (2002); http://dx.doi.org/10.1063/1.1471374 (3 pages) | Cited 32 times

Online Publication Date: 16 April 2002

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Photoreflectance spectra of a high-quality ZnO epilayer on the ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy exhibited clear excitonic resonances due to three excitons associated with uppermost valence bands (A, B, and C excitons). The oscillator strengths of the B and C excitons are larger than that of the A exciton. Their broadening was interpreted to be due to the contribution by exciton–polaritons in terms of large longitudinal–transverse splitting of respective excitons. Dependence of the exciton energy on temperature was well fitted assuming the Bose–Einstein statistics giving the Einstein characteristic temperature ΘE of 380 K (33 meV). © 2002 American Institute of Physics.
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78.66.Hf II-VI semiconductors
71.35.Gg Exciton-mediated interactions
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.55.Et II-VI semiconductors

Influence of substrate bias voltage on surface morphology and nanocluster arrangement of gold containing amorphous hydrogenated carbon

Ivan R. Videnović, Verena Thommen, Peter Oelhafen, Daniel Mathys, Marcel Düggelin, and Richard Guggenheim

Appl. Phys. Lett. 80, 2863 (2002); http://dx.doi.org/10.1063/1.1471380 (3 pages) | Cited 2 times

Online Publication Date: 16 April 2002

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Gold containing amorphous hydrogenated carbon (a-C:H/Au) thin films are studied by means of ex situ atomic-force and scanning electron microscopy, and in situ x-ray photoelectron spectroscopy. Introducing a dc substrate bias voltage during magnetron plasma-assisted chemical-vapor deposition of a-C:H/Au results in significant changes of surface morphology and nanocluster arrangement, compared to films deposited on electrically grounded substrates. Grounded samples are rather flat (below 1 nm of roughness), with topmost Au clusters covered with a very thin, nanometer-range layer of a-C:H. On the other hand, the biased sample surface is characterized by large bump structures (up to 13 nm in height) and bald gold clusters. © 2002 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)
79.60.Dp Adsorbed layers and thin films

Microscopic evidence of point defect incorporation in laterally overgrown GaN

S. Gradečak, V. Wagner, M. Ilegems, T. Riemann, J. Christen, and P. Stadelmann

Appl. Phys. Lett. 80, 2866 (2002); http://dx.doi.org/10.1063/1.1470696 (3 pages) | Cited 3 times

Online Publication Date: 16 April 2002

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Electron microscopy techniques are applied to investigate structural and optical properties of GaN layers selectively grown by hydride vapor phase epitaxy on crystalline GaN seed layers deposited on (0001)Al2O3 substrates. Regions with different optical properties are observed in the cross- sections of the layers. They are defined by the crystallographic planes that serve as growth facets. We give a simple geometrical explanation of point defect incorporation occurring more easily for the {11math2} GaN than for the {0001} GaN growth facets. Microscopic evidences supporting the model are higher concentrations of point-like defects and local strain variations in laterally grown regions that are revealed by high-resolution electron microscopy. © 2002 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
61.72.J- Point defects and defect clusters
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO

Naoki Ohashi, Takamasa Ishigaki, Nobuhiro Okada, Takashi Sekiguchi, Isao Sakaguchi, and Hajime Haneda

Appl. Phys. Lett. 80, 2869 (2002); http://dx.doi.org/10.1063/1.1470703 (3 pages) | Cited 85 times

Online Publication Date: 16 April 2002

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A pulse-modulated plasma irradiation technique was applied to hydrogenation of ZnO. Three kinds of ZnO samples were employed to investigate the electronic state of hydrogen in ZnO. Secondary-ion-mass-spectroscopy analysis using isotope tracer revealed that the surface layer to 100 nm was doped with hydrogen after the irradiation and its concentration was in the order of 1016 cm−3. The efficiency of band edge emission was increased by the hydrogenation. However, the the degree of the improvements depended on impurity and defect concentration in the original samples. It was concluded that hydrogen in ZnO passivates deep donor and acceptor states by electron transfer from hydrogen to the defects. © 2002 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
81.05.Dz II-VI semiconductors
78.55.Et II-VI semiconductors
71.55.Gs II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.65.Rv Passivation
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.S- Impurities in crystals

Optical and luminescence characteristics of thermally evaporated pentacene films on Si

S. P. Park, S. S. Kim, J. H. Kim, C. N. Whang, and S. Im

Appl. Phys. Lett. 80, 2872 (2002); http://dx.doi.org/10.1063/1.1471929 (3 pages) | Cited 6 times

Online Publication Date: 16 April 2002

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We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120 °C. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior. © 2002 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.60.Fi Electroluminescence
78.55.Kz Solid organic materials

Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

Tadashige Sato and Megumi Imai

Appl. Phys. Lett. 80, 2875 (2002); http://dx.doi.org/10.1063/1.1473693 (3 pages)

Online Publication Date: 16 April 2002

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Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p+/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017 cm−3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Creation and suppression of point defects through a kick-out substitution process of Fe in InP

Y. W. Zhao, H. W. Dong, Y. H. Chen, Y. H. Zhang, J. H. Jiao, J. Q. Zhao, L. Y. Lin, and S. Fung

Appl. Phys. Lett. 80, 2878 (2002); http://dx.doi.org/10.1063/1.1473695 (2 pages) | Cited 8 times

Online Publication Date: 16 April 2002

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Indium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation of point defects in Fe-diffused SI InP can be explained in terms of the complete occupation by Fe at indium vacancy. The InP defect is enhanced by the indium interstitial that is caused by the kick out of In and the substitution at the indium site of Fe in the diffusion process. Through these Fe-diffusion results, the nature of the defects in annealed undoped SI InP is better understood. © 2002 American Institute of Physics.
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61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
78.55.Cr III-V semiconductors
66.30.J- Diffusion of impurities

Highly stressed carbon film coatings on silicon: Potential applications

T. Sharda, T. Soga, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 80, 2880 (2002); http://dx.doi.org/10.1063/1.1471379 (3 pages) | Cited 8 times

Online Publication Date: 16 April 2002

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Highly stressed and strongly adhered nanocrystalline diamond films are grown on Si substrates by providing controlled and continuous bias current density (BCD) in microwave plasma chemical vapor deposition system. The stress and hence the curvature of the films on Si substrates can be varied and controlled by changing the BCD. We propose applications for such stressed films in the areas in which bent crystals are being used for various purposes, i.e., particle physics, x-ray optics, etc. These bent Si substrates can replace crystal benders, a cumbersome mechanical arrangement, used for bending Si in those areas. © 2002 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.07.Bc Nanocrystalline materials
62.25.-g Mechanical properties of nanoscale systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Spectral profile of the two-photon absorption coefficients in CaF2 and BaF2

Toru Tsujibayashi, Koichi Toyoda, Shiro Sakuragi, Masao Kamada, and Minoru Itoh

Appl. Phys. Lett. 80, 2883 (2002); http://dx.doi.org/10.1063/1.1471939 (3 pages) | Cited 15 times

Online Publication Date: 16 April 2002

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Two-photon absorption spectra due to the valence excitons in CaF2 and BaF2 have been measured using the second harmonic of the output of a XeCl-excimer-laser pumped dye laser as a light source. The band gap energies of CaF2 and BaF2 are obtained as 11.8 and 10.6 eV at 298 K, respectively. The two-photon absorption coefficient β in the spectral region below the 2P exciton is expressed by an exponential function of the photon energy in both crystals. The values of β at the 2P exciton peak are about 2×10−9 cm/W for CaF2 and 3×10−9 cm/W for BaF2. © 2002 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Ps Other inorganic compounds
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates

S. Mikroulis, A. Georgakilas, A. Kostopoulos, V. Cimalla, E. Dimakis, and Ph. Komninou

Appl. Phys. Lett. 80, 2886 (2002); http://dx.doi.org/10.1063/1.1472481 (3 pages) | Cited 19 times

Online Publication Date: 16 April 2002

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The nitridation of Al2O3 (0001) substrate surfaces by radio-frequency nitrogen plasma has been investigated. A 1.5-nm-thick surface nitride layer occurred for 100 min nitridation at high substrate temperature, while the nitridation appeared to be limited to a surface atomic plane at low temperature. In-plane lattice constant relaxation was observed in both cases. A high nitridation temperature resulted into a Ga face and a low temperature to N-face polarity of overgrown GaN films. However, low temperature nitridation and an AlN buffer layer also produced a Ga-face polarity. The results are consistent with low formation energy of AlN/sapphire films with Ga-face polarity. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Surface segregation of bulk oxygen on oxidation of epitaxially grown Nb-doped SrTiO3 on SrTiO3(001)

Fan Chen, Tong Zhao, Y. Y. Fei, Huibin Lu, Zhenghao Chen, Guozhen Yang, and X. D. Zhu

Appl. Phys. Lett. 80, 2889 (2002); http://dx.doi.org/10.1063/1.1473694 (3 pages) | Cited 17 times

Online Publication Date: 16 April 2002

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We studied the epitaxy of 10 mol % Nb:SrTiO3 on a SrTiO3(100) substrate under an interrupted pulsed-laser-deposition condition. By monitoring the recovery behaviors of reflection high-energy electron diffraction intensity and an optical reflectance difference signal from the growth surface, we observed that, at temperatures above 630 °C, the oxidation of an as-deposited Nb:SrTiO3 monolayer was achieved by the diffusion of oxygen vacancies in the monolayer into the substrate. © 2002 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
81.65.Mq Oxidation
81.15.Fg Pulsed laser ablation deposition

Vaporization thermodynamics of MgB2 and MgB4

S. Brutti, A. Ciccioli, G. Balducci, G. Gigli, P. Manfrinetti, and A. Palenzona

Appl. Phys. Lett. 80, 2892 (2002); http://dx.doi.org/10.1063/1.1471382 (3 pages) | Cited 27 times

Online Publication Date: 16 April 2002

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The vaporization behavior of MgB2 and MgB4 under thermodynamic conditions has been studied by the Knudsen effusion-mass spectrometry technique. In the temperature range explored (883–1154 K), magnesium borides are observed to decompose by loss of gaseous Mg only. The equilibrium pressures of Mg(g) have been measured during high-temperature decompositions involving MgB2/MgB4 and MgB4/MgB7 two-phase mixtures and the corresponding standard reaction enthalpies were determined. The decomposition temperatures for MgB2 and MgB4 were also inferred by the relevant Van’t Hoff plots. © 2002 American Institute of Physics.
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64.70.Hz Solid-vapor transitions
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
65.40.G- Other thermodynamical quantities
82.60.Cx Enthalpies of combustion, reaction, and formation

Short-time thermoelastic contributions to picosecond-time scale reflectivity measurements of metals

C. J. K. Richardson and J. B. Spicer

Appl. Phys. Lett. 80, 2895 (2002); http://dx.doi.org/10.1063/1.1472464 (3 pages) | Cited 11 times

Online Publication Date: 16 April 2002

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The thermoelastic transients observed in aluminum during the first few picoseconds after absorption of a subpicosecond duration laser pulse are described through numerical simulations using a nonlinear, two-temperature parabolic model of thermal stresses. Comparisons between these simulations and experimental measurements obtained from a single-crystal aluminum sample and polycrystalline aluminum films on silicon illustrate that the thermal and elastic transients must both be considered at all times in order for the physical properties that are interpreted from the experimental measurements to be consistent with those obtained from other measurements made at various time scales. © 2002 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
78.66.Bz Metals and metallic alloys
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.60.Bs Mechanical and acoustical properties
62.20.D- Elasticity
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

“Resonance” phenomena in thermal diffusion processes in two-layer structures

Yu. G. Gurevich, G. N. Logvinov, N. Muñoz Aguirre, and L. Martínez Pérez

Appl. Phys. Lett. 80, 2898 (2002); http://dx.doi.org/10.1063/1.1468899 (3 pages) | Cited 4 times

Online Publication Date: 16 April 2002

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The dependence on the chopper frequency of the effective thermal diffusivity and effective thermal conductivity in photoacoustic experiments is discussed. The theoretical model of a two-layer structure at rear-surface illumination in the high frequency limit is considered. It is shown that the effective thermal diffusivity presents “resonance” while the effective thermal conductivity sharply changes its magnitude and sign. Such “resonant” behavior strongly depends on the surface thermal conductivities associated with the interface thermal contacts. © 2002 American Institute of Physics.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
62.65.+k Acoustical properties of solids
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Stimulated-emission-induced enhancement of the decay rate of longitudinal optical phonons in III–V semiconductors

Jing Chen, Jacob B. Khurgin, and R. Merlin

Appl. Phys. Lett. 80, 2901 (2002); http://dx.doi.org/10.1063/1.1471567 (3 pages) | Cited 8 times

Online Publication Date: 16 April 2002

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We explore the feasibility of reducing the lifetime of longitudinal optical phonons in InP by injecting coherent longitudinal acoustic modes of frequency given by the difference between those of the longitudinal and transverse optical phonons. Calculations show that a ten-fold reduction in the lifetime can be attained using a 40 mW acoustic source. The increase in the phonon decay should reduce the scattering rate of hot electrons in fast devices. © 2002 American Institute of Physics.
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63.20.K- Phonon interactions
72.20.Ht High-field and nonlinear effects
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
72.80.Ey III-V and II-VI semiconductors

Structure and properties of spinel Fe3N4 and comparison to zinc blende FeN

W. Y. Ching, Yong-Nian Xu, and Paul Rulis

Appl. Phys. Lett. 80, 2904 (2002); http://dx.doi.org/10.1063/1.1473691 (3 pages) | Cited 5 times

Online Publication Date: 16 April 2002

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Show Abstract
The structure and properties of iron nitride with a cubic spinel structure are predicted. Spin-polarized calculations show it to be weakly ferromagnetic with a total magnetic moment of 3.26 μB per formula unit. Total energy versus volume calculations yield a large bulk modulus of 304 GPa, which is attributed to the strong covalent bonding between Fe and N. These results differ significantly from those of stoichiometric FeN in a zinc blende structure. © 2002 American Institute of Physics.
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61.66.Fn Inorganic compounds
62.20.D- Elasticity
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Dd Nonmetallic ferromagnetic materials
72.25.Ba Spin polarized transport in metals
61.50.Lt Crystal binding; cohesive energy

Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

Giuliano Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 80, 2907 (2002); http://dx.doi.org/10.1063/1.1471932 (3 pages) | Cited 19 times

Online Publication Date: 16 April 2002

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In this work, we report a study of the behavior of linewidths of excitonic photoluminescence transitions measured at 10 K in AlGaN alloys for high Al concentrations of 0.5 and 0.7. Our samples were grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates. We find that the values of the excitonic linewidths we measure agree very well with those calculated using a model in which the broadening effect is assumed to be due to compositional disorder in completely random semiconductor alloys thus attesting to an excellent quality of our samples even with high Al concentrations. © 2002 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
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