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29 Apr 2002

Volume 80, Issue 17, pp. 3033-3231

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Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, and J.-F. Hochedez

Appl. Phys. Lett. 80, 3198 (2002); http://dx.doi.org/10.1063/1.1475362 (3 pages) | Cited 31 times

Online Publication Date: 22 April 2002

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We report on the fabrication and characterization of low dark-current GaN metal–semiconductor–metal (MSM) photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explain and control the performance as a function of residual doping and geometry are applied to GaN-based MSM photodiodes. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Sx Metal-semiconductor-metal structures

Anthracene derivatives for stable blue-emitting organic electroluminescence devices

Jianmin Shi and Ching W. Tang

Appl. Phys. Lett. 80, 3201 (2002); http://dx.doi.org/10.1063/1.1475361 (3 pages) | Cited 178 times

Online Publication Date: 22 April 2002

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A class of anthracene derivative which is suitable used as emitting materials for producing efficient and stable blue emission for full color organic electroluminescence (EL) devices has been developed. Multilayer organic EL devices using these fluorescent materials as an emitting layer produced blue emissions with good chromaticity and luminous efficiency as high as 3.5 cd/A. The half life of 4000 h of blue emission EL device with initial light output 700 cd/m2 has been achieved. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices

Three-terminal gated magnetoelectronic device

S. Zelakiewicz and Mark Johnson

Appl. Phys. Lett. 80, 3204 (2002); http://dx.doi.org/10.1063/1.1467700 (3 pages) | Cited 5 times

Online Publication Date: 22 April 2002

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In a Hybrid Hall device, magnetic fringe fields from the edge of a single, patterned ferromagnetic film generate a Hall voltage in a two-dimensional electron gas. By adding an electrostatic gate to this passive device and applying an electric field, we demonstrate the reduction of the carrier density by 50% and the consequent enhancement of the bistable output levels by 100%. This modulation of magnetoelectronic characteristics by using a gate voltage shows the possibility of creating an active spintronic device. The gated Hybrid Hall device may also be used as a nonvolatile memory cell with the unique attribute that isolation and storage are provided by a single device.
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85.75.Nn Hybrid Hall devices
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.

Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse

Appl. Phys. Lett. 80, 3207 (2002); http://dx.doi.org/10.1063/1.1473701 (3 pages) | Cited 31 times

Online Publication Date: 22 April 2002

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The gate leakage behavior in AlGaN/GaN heterostructure field-effect transistors was studied as a function of applied bias, temperature, and surface periphery. A surface hopping conduction mechanism with an activation energy of 0.21 eV is proposed for the gate–drain leakage for voltages that exceed pinchoff. The reverse breakdown voltage of the device exhibited a negative temperature coefficient of −0.11 V K−1, suggesting that a breakdown mechanism other than impact ionization, such as thermal runaway, may be responsible. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
84.30.Jc Power electronics; power supply circuits
73.50.Fq High-field and nonlinear effects
81.15.Kk Vapor phase epitaxy; growth from vapor phase

High speed data link between digital superconductor chips

Quentin P. Herr, Andrew D. Smith, and Michael S. Wire

Appl. Phys. Lett. 80, 3210 (2002); http://dx.doi.org/10.1063/1.1473687 (3 pages) | Cited 28 times

Online Publication Date: 22 April 2002

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Superconductor digital devices using single-flux-quantum (SFQ) data encoding offer higher speed at lower power than any other integrated circuit technology. For this very reason, interconnect is challenging. We report SFQ data transfer between chips flip chip mounted on a passive microstrip carrier. The flip-chip structure achieves bandwidths greater than 250 GHz. Unlike previous designs, our signal lines are terminated at both ends; this is accomplished using a driver that produces a double-flux-quantum signal. We measured the circuit for pseudorandom data in the range of 10–60 Gb/s. Bit error rates are measured down to 1E−10 and extrapolate to negligible values. The signal power on the microstrip is only 30 nW at 60 Gb ps. © 2002 American Institute of Physics.
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85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
74.40.-n Fluctuation phenomena

Quantitative analysis of one-dimensional dopant profile by electron holography

M. R. McCartney, M. A. Gribelyuk, Jing Li, P. Ronsheim, J. S. McMurray, and David J. Smith

Appl. Phys. Lett. 80, 3213 (2002); http://dx.doi.org/10.1063/1.1473702 (3 pages) | Cited 34 times

Online Publication Date: 22 April 2002

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The one-dimensional dopant profile of a silicon p–n junction was characterized using off-axis electron holography in a transmission electron microscope (TEM). Quantitative comparisons were made with simulated voltage profiles based on data obtained from secondary-ion mass spectroscopy. Close agreement was obtained over a range of sample thicknesses, and a spatial resolution of 5 nm and sensitivity of 0.1 V were established. By using a sample that had been wedge polished and briefly ion milled, depleted surface layers did not need to be taken into account, and beam-induced charging was removed by carbon coating one exposed surface of the TEM specimen. © 2002 American Institute of Physics.
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61.72.S- Impurities in crystals
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling
61.05.jp Electron holography

Maximum current in nitride-based heterostructure field-effect transistors

A. Koudymov, H. Fatima, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, and R. Gaska

Appl. Phys. Lett. 80, 3216 (2002); http://dx.doi.org/10.1063/1.1476054 (3 pages) | Cited 22 times

Online Publication Date: 22 April 2002

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We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructure field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate length, in qualitative agreement with the model that accounts for the velocity saturation in the channel and for the effect of the source series resistance. The maximum current as high as 2.6 A/mm can be achieved in MOSHFETs with a submicron gate. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

N. S. Saks, M. G. Ancona, and R. W. Rendell

Appl. Phys. Lett. 80, 3219 (2002); http://dx.doi.org/10.1063/1.1473867 (3 pages) | Cited 17 times

Online Publication Date: 22 April 2002

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A technique is presented for measuring the density of interface traps versus energy DIT(E) using the Hall effect in metal-oxide-semiconductor samples. Good agreement is obtained between this Hall approach and standard C–V techniques in both SiC and silicon test devices. DIT(E) is found to be much higher in 4H–SiC compared to 6H devices oxidized at the same time. DIT(E) in both SiC poly types increases exponentially with energy approaching the conduction bandedge. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.My Galvanomagnetic and other magnetotransport effects

Resonant-cavity-enhanced heterostructure metal–semiconductor–metal photodetector

Xiying Chen, Bahram Nabet, Fabio Quaranta, Adriano Cola, and Marc Currie

Appl. Phys. Lett. 80, 3222 (2002); http://dx.doi.org/10.1063/1.1470224 (3 pages) | Cited 8 times

Online Publication Date: 22 April 2002

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We report a GaAs-based high-speed, resonant-cavity-enhanced, heterostructure metal–semiconductor–metal photodetector with Al0.24Ga0.76As/Al0.9Ga0.1As distributed Bragg reflector operating around 850 nm. The photocurrent spectrum shows a clear peak at this wavelength with full width at half maximum (FWHM) of around 30 nm. At resonance wavelength, a seven-fold increase can be achieved in quantum efficiency compared to a detector of the same absorption depth. The top reflector is a delta modulation doped Al0.24Ga0.76As that also acts as the barrier enhancement layer thus providing very low dark current values. The breakdown voltage is above 20 V. Time response measurements show rise time, fall time, and FWHM of 8.8 ps, 9 ps, and 8.1 ps, respectively, giving a 3-dB bandwidth of about 33 GHz. Combination of low dark current, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device especially suitable for short haul communications purposes. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
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