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29 Apr 2002

Volume 80, Issue 17, pp. 3033-3231

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Fast time-resolved x-ray diffraction in BaTiO3 films subjected to a strong high-frequency electric field

E. Zolotoyabko, J. P. Quintana, B. H. Hoerman, and B. W. Wessels

Appl. Phys. Lett. 80, 3159 (2002); http://dx.doi.org/10.1063/1.1476057 (3 pages) | Cited 16 times

Online Publication Date: 22 April 2002

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The pulsed synchrotron radiation from the Advanced Photon Source of Argonne National Laboratory was used to measure the dynamic structural response in 200-nm-thick BaTiO3 ferroelectric films, in situ, under the application of a high-frequency electric field. X-ray diffraction measurements were performed in the stroboscopic mode, i.e., by synchronizing the x-ray bursts with the electric-field periodicity. Time-dependent variations of lattice parameters were derived from the electric-field-induced distortions of the diffraction profiles. Drastic reduction of the relaxation time, from 6.9 ns at 71.69 MHz down to 0.7 ns at 521.36 MHz, was found with an increase of the electric-field frequency. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants

Field-cooled static nonlinear response of relaxor ferroelectrics

Z. Kutnjak, R. Pirc, and R. Blinc

Appl. Phys. Lett. 80, 3162 (2002); http://dx.doi.org/10.1063/1.1475771 (3 pages) | Cited 25 times

Online Publication Date: 22 April 2002

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The third-order static field-cooled nonlinear dielectric permittivity in relaxor ferroelectric PbMg1/3Nb2/3O3 has been measured as a function of temperature. It is shown that the observed behavior can be explained by a mechanism of nonlinear response within the framework of the spherical random bond-random field model. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)

Polarized Raman scattering of epitaxial PbTiO3 thin film with coexisting c and a domains

Sun-Hwa Lee, Hyun M. Jang, Seong M. Cho, and Gyu-Chul Yi

Appl. Phys. Lett. 80, 3165 (2002); http://dx.doi.org/10.1063/1.1473864 (3 pages) | Cited 14 times

Online Publication Date: 22 April 2002

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Effects of the orientation of ferroelectric domains on the characteristics of polarized Raman spectra were studied using an epitaxially grown PbTiO3 thin film in which the c-axis oriented domains coexist with the a-axis oriented domains on MgO (001). To obtain polarized spectra for both two distinctive c and a domains, we have employed scattering configurations in which the relevant phonon wave vector, k, is perpendicular to the c axis of the tetragonal unit cell. Compared with the mode frequencies of single-crystal PbTiO3, a softening of the E(TO) phonons was evident for both c and a domains, suggesting the presence of a strong tensile film stress. In addition to this, we observed a splitting of the degenerate “silent” mode into two distinctive B1 and E modes in an epitaxially grown film on MgO (001). © 2002 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
77.55.-g Dielectric thin films
78.66.Nk Insulators
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions

Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

San-Yuan Chen, Chia-Liang Sun, Shi-Bai Chen, and Albert Chin

Appl. Phys. Lett. 80, 3168 (2002); http://dx.doi.org/10.1063/1.1471937 (3 pages) | Cited 13 times

Online Publication Date: 22 April 2002

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We have investigated the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6 nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance–voltage characteristics and the same threshold voltage shift of 1.6 V at applied ±10 V bias. However, the leakage current of BLT on Al2O3/Si at −100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down. © 2002 American Institute of Physics.
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85.50.Gk Non-volatile ferroelectric memories
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Na0.5K0.5NbO3 thin films for voltage controlled acoustoelectric device applications

Choong-Rae Cho, Ilia Katardjiev, Michael Grishin, and Alex Grishin

Appl. Phys. Lett. 80, 3171 (2002); http://dx.doi.org/10.1063/1.1473689 (3 pages) | Cited 20 times

Online Publication Date: 22 April 2002

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Perovskite Na0.5K0.5NbO3 (NKN) thin films have been prepared on Y+36° cut single crystal quartz substrates using the pulsed laser ablation technique. X-ray diffraction θ–2θ and ω-scan data demonstrate almost perfectly c-axis oriented film textures with narrow mosaic broadening. Radio frequency dielectric spectroscopy showed that the films possess relatively high dielectric permittivities, low dielectric losses, and low frequency dispersions. Capacitance–voltage (C–V) measurements for a 2 μm slot NKN/quartz interdigital capacitor yield 23.1% tunability by applying 40 V bias at 1 MHz, while C–V hysteresis indicates polarization reversal. The considerable voltage tunability with superior crystallinity in piezoelectric NKN films on quartz substrates suggests their potential use for novel voltage tunable acoustoelectric devices. © 2002 American Institute of Physics.
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72.50.+b Acoustoelectric effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
73.50.Rb Acoustoelectric and magnetoacoustic effects

Piezoelectric properties and phase transitions of 〈001〉-oriented Pb(Zn1/3Nb2/3)O3–PbTiO3 single crystals

W. Ren, S-F. Liu, and B. K. Mukherjee

Appl. Phys. Lett. 80, 3174 (2002); http://dx.doi.org/10.1063/1.1474600 (3 pages) | Cited 36 times

Online Publication Date: 22 April 2002

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Electric-field-induced phase transitions and piezoelectric properties of 〈001〉-oriented Pb(Zn1/3Nb2/3)O3–xPbTiO3 single crystals for x = 4.5% and 8% (PZN–4.5%PT and PZN–8%PT) have been investigated as a function of temperature. It was found that the piezoelectric properties and phase transitions for both crystals are strongly dependent on temperature. The measurements of polarization and strain as a function of unipolar electric field show that the field for the rhombohedral–tetragonal phase transition decreases linearly with temperature in the range between 25 and 105 °C. Thus, raising the temperature can stabilize the tetragonal phase in 〈001〉-oriented PZN–PT crystals. Longitudinal piezoelectric constant d33 in the rhombohedral phase increases with temperature for both crystals; in PZN–4.5%PT the slope itself increases significantly at temperatures over 60 °C. In the field-induced tetragonal phase, there is little change in d33 for PZN–8%PT within the temperature range investigated, while in PZN–4.5%PT a slight increase of d33 with temperature was observed at temperatures above 80 °C. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
64.70.K- Solid-solid transitions
77.80.-e Ferroelectricity and antiferroelectricity
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
77.22.Ej Polarization and depolarization

Suppressed boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor structures

Heung-Jae Cho, Dae-Gyu Park, Kwan-Yong Lim, Jung-Kyu Ko, In-Seok Yeo, Jin Won Park, and Jae-Sung Roh

Appl. Phys. Lett. 80, 3177 (2002); http://dx.doi.org/10.1063/1.1474603 (3 pages) | Cited 7 times

Online Publication Date: 22 April 2002

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We demonstrate a suppressed boron penetration in p+ polycrystalline-Si (poly-Si)/Al2O3/n-Si metal–oxide–semiconductor (MOS) capacitors using a remote plasma nitridation (RPN) of Al2O3 surface. The B penetration was sufficiently suppressed for temperature to 850 °C in N2 for 30 min as manifested by the negligible flat band shift (ΔVFB) and insignificant B diffusion. The nitrogen (N) incorporation in Al2O3 surface appears to effectively impede the B diffusion into the Si channel. Increased gate leakage current for the n+ poly-Si/RPN-Al2O3/p-Si n-type MOS capacitors was observed and attributed to the reduced band gap energy of RPN-Al2O3 due to the formation of AlN and bulk defects due to RPN. Optimization of N concentration is required for the suppressed B penetration and leakage reduction. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Ty Semiconductor-insulator-semiconductor structures
84.32.Tt Capacitors
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

Determination of the optimal cation composition of ferroelectric (ZnxCd1−x)S thin films for applications to silicon-based nonvolatile memories

Y. Hotta, E. Rokuta, J.-H. Jhoi, H. Tabata, H. Kobayashi, and T. Kawai

Appl. Phys. Lett. 80, 3180 (2002); http://dx.doi.org/10.1063/1.1476710 (3 pages) | Cited 18 times

Online Publication Date: 22 April 2002

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Thin films of ferroelectric binary mixed II–VI compounds such as (ZnxCd1−x)S, as well as (ZnyCd1−y)Te and (ZnzCd1−z)Se (0 ⩽ x,y,z ⩽ 1), were examined from the standpoint of the application to Si-based nonvolatile memories. Electronic-band discontinuities at the ferroelectric–Si interface decreased significantly with increase in the atomic number of the constituent chalcogenide atoms, which favored (ZnxCd1−x)S as the most potential gate ferroelectrics among the three compounds. Polarization-field (P–E) characteristics of the (ZnxCd1−x)S films were found to largely depend on the cation composition. No hysteretic behaviors in the P–E curves were observed for high-Zn concentrations above x = 0.5, while the P–E curves traced hysteretic loops due to the ferroelectricity for x<0.5. The remnant polarization was greatly dependent on the Zn concentration, and yielded a maximum of 0.03 μC/cm2 for x = 0.3. On the other hand, the coercive field was not composition dependent, and was approximately 12 kV/cm. © 2002 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.Nq Composition and phase identification
77.55.-g Dielectric thin films
85.50.Gk Non-volatile ferroelectric memories
73.61.Ga II-VI semiconductors
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
73.20.At Surface states, band structure, electron density of states

Application of HfSiON as a gate dielectric material

M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo

Appl. Phys. Lett. 80, 3183 (2002); http://dx.doi.org/10.1063/1.1476397 (3 pages) | Cited 202 times

Online Publication Date: 22 April 2002

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Physical and electrical properties of HfSiON that make this material desirable as the gate dielectric in a standard metal–oxide–semiconductor flow are reported. Sputtering was used to deposit films with minimal low dielectric constant interface layers, equivalent oxide thicknesses below 13 Å, and leakage current density at least two orders of magnitude lower than SiO2. The presence of nitrogen in the film enhances the thermal stability relative to HfSiO, and no crystallization was observed for anneals up to 1100 °C. © 2002 American Institute of Physics.
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77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Cd Deposition by sputtering
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
61.72.Cc Kinetics of defect formation and annealing
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