APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

29 Apr 2002

Volume 80, Issue 17, pp. 3033-3231

Return to All Sections
back to top
RSS Feeds
FREE

Erratum: “Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors” [Appl. Phys. Lett. 80, 1580 (2002)]

T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. S. Kline, and J. R. Tucker

Appl. Phys. Lett. 80, 3231 (2002); http://dx.doi.org/10.1063/1.1476066 (1 page)

Online Publication Date: 22 April 2002

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.05.Cy Elemental semiconductors
73.61.Cw Elemental semiconductors
71.55.Cn Elemental semiconductors
72.80.Cw Elemental semiconductors
61.72.S- Impurities in crystals
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
99.10.Cd Errata
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close