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29 Apr 2002

Volume 80, Issue 17, pp. 3033-3231

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Charge-density wave as an electro-optical switch and memory

N. Ogawa and K. Miyano

Appl. Phys. Lett. 80, 3225 (2002); http://dx.doi.org/10.1063/1.1474606 (3 pages) | Cited 7 times

Online Publication Date: 22 April 2002

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Switching and memory effects based on the deformation of the charge-density wave (CDW) in K0.3MoO3 are demonstrated. The deformations, which greatly affect the CDW dynamic phase transition from creep phase to slide phase, can be set by an external electric field and be removed by photoexcitation. This property can be exploited to realize an electrically readable switch or memory device without incorporating any circuitry but two electrical leads. © 2002 American Institute of Physics.
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71.45.Lr Charge-density-wave systems
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Ln Holographic recording materials; optical storage media
72.15.Nj Collective modes (e.g., in one-dimensional conductors)

Monte Carlo simulation of bremsstrahlung emission by electrons

E. Acosta, X. Llovet, and F. Salvat

Appl. Phys. Lett. 80, 3228 (2002); http://dx.doi.org/10.1063/1.1473684 (3 pages) | Cited 17 times

Online Publication Date: 22 April 2002

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An algorithm for the simulation of bremsstrahlung emission by fast electrons using numerical cross sections is described. It is based on natural factorization of the double-differential cross section and on the fact that the intrinsic angular distribution of photons with a given energy can be very closely approximated by a Lorentz-boosted dipole distribution. The parameters of this angular distribution vary smoothly with the atomic number of the target atom and with the energies of the projectile’s electron and the photon emitted. Results from simulations of thick-target bremsstrahlung are compared with experimental data. © 2002 American Institute of Physics.
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78.70.Ck X-ray scattering
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