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29 Apr 2002

Volume 80, Issue 17, pp. 3033-3231

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Visualization of low-frequency liquid surface acoustic waves by means of optical diffraction

Runcai Miao, Zongli Yang, Jingtao Zhu, and Changyu Shen

Appl. Phys. Lett. 80, 3033 (2002); http://dx.doi.org/10.1063/1.1475769 (3 pages) | Cited 12 times

Online Publication Date: 22 April 2002

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A technique for low-frequency liquid surface acoustic wave (LFLSAW) visualization is developed based on the light diffraction. The technique is capable of real-time characterization of wave amplitude, and it produces highly visible stationary diffraction pattern for a low-frequency wave (a few hundreds Hz). The disappearance of the zero-order diffraction fringe, which corresponding to the 100% diffraction efficiency, was experimentally observed for using this technique. The correlation of the diffraction pattern to the LFLSAW amplitude is also experimentally established. © 2002 American Institute of Physics.
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43.35.Pt Surface waves in solids and liquids

Broadband optical amplifier based on a conjugated polymer

J. R. Lawrence, G. A. Turnbull, and I. D. W. Samuel

Appl. Phys. Lett. 80, 3036 (2002); http://dx.doi.org/10.1063/1.1472479 (3 pages) | Cited 26 times

Online Publication Date: 22 April 2002

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We demonstrate a compact, broadband optical amplifier using the conjugated polymer poly[2-methoxy-5-(2′,6′-dimethyloctyloxy)-paraphenylenevinylene] (OC1C10–PPV) in dilute solution. Gains of 30–40 dB in a wavelength range of 575–640 nm, corresponding to a 50 THz bandwidth, are observed due to the broad luminescence spectrum and large cross section for stimulated emission of the polymer. The variation in gain as a function of solution concentration and probe intensity is examined. For a 1 cm path length we observe a small signal gain of 44±1 dB, and deduce a stimulated emission cross-section for OC1C10–PPV of (5.3±0.6)×10−17 cm2. © 2002 American Institute of Physics.
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42.70.Hj Laser materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Jk Polymers and organics
78.45.+h Stimulated emission
78.55.Bq Liquids

Wavelength stabilization of semiconductor lasers with a tunable photodetector

Lorenzo Colace, Gianlorenzo Masini, and Gaetano Assanto

Appl. Phys. Lett. 80, 3039 (2002); http://dx.doi.org/10.1063/1.1473877 (3 pages) | Cited 1 time

Online Publication Date: 22 April 2002

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We introduce an approach to stabilizing the wavelength of a semiconductor laser employing a voltage-tunable photodetector. The latter provides a bipolar error signal driving a feedback loop for the laser retuning. We demonstrate wavelength stabilization within ±25 pm in the 1.55 μm window. Performances, system compactness, and integrability make the approach quite appealing for use in dense wavelength division multiplexing networks. © 2002 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
85.60.Gz Photodetectors (including infrared and CCD detectors)

Polarization effects of a europium complex in stretched polyethylene

V. I. Srdanov, M. R. Robinson, M. H. Bartl, X. Bu, and G. C. Bazan

Appl. Phys. Lett. 80, 3042 (2002); http://dx.doi.org/10.1063/1.1470700 (3 pages) | Cited 8 times

Online Publication Date: 22 April 2002

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Polarization effects in photoluminescence spectra of Eu3+ ions in tris(dinaphthoylmethane) (monophenanthroline)europium(III) complex [abbreviated hereafter as Eu(dnm)3phen] dispersed in stretched polyethylene (PE) reveal quasi-uniaxial alignment of the molecular complex, not present in the unstretched PE. The ligand field structure of Eu3+ 5D0–7F2 transition in the Eu(dnm)3phen single crystal differs from that of a single molecule in stretched PE, indicating rearrangement of the organic ligands upon stretching. © 2002 American Institute of Physics.
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78.55.Kz Solid organic materials
71.70.Ch Crystal and ligand fields

Coupled-stripe quantum-well-assisted AlGaAs–GaAs–InGaAs–InAs quantum-dot laser

G. Walter, T. Chung, and N. Holonyak

Appl. Phys. Lett. 80, 3045 (2002); http://dx.doi.org/10.1063/1.1473686 (3 pages) | Cited 8 times

Online Publication Date: 22 April 2002

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Data are presented on the coupled-stripe laser operation (continuous wave, 300 K) of a single InAs quantum-dot (QD) layer coupled via a thin (5 Å) GaAs barrier to an auxiliary strained InGaAs quantum well (QW) grown (confined) in an AlGaAs–GaAs heterostructure. Because of strain-induced (QW strain) improvement of the QD growth and QD alignment along diagonal (reflecting) ridges, the InGaAs-QW+InAs-QD crystals exhibit high gain along and across laser stripes, which is advantageous for coupled-stripe laser operation. A twin-stripe single-QD-layer QW+QD laser (4 μm stripes on 6 μm centers) of usual cleaved length, < 500 μm, is capable of continuous 300 K operation, with only probe heat-sink clamping and testing, at >50 mW. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Intrinsic reduction of the depolarization loss in solid-state lasers by use of a (110)-cut Y3Al5O12 crystal

Ichiro Shoji and Takunori Taira

Appl. Phys. Lett. 80, 3048 (2002); http://dx.doi.org/10.1063/1.1475365 (3 pages) | Cited 16 times

Online Publication Date: 22 April 2002

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The depolarization caused by thermally induced birefringence in Y3Al5O12 lasers is intrinsically reduced without any compensation by use of rods cut in other directions than (111). Using a (110)-cut crystal, one can expect the depolarization to become less than 1/10 of that caused in a conventional (111)-cut crystal. © 2002 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
78.20.Fm Birefringence
42.25.Lc Birefringence

Unidirectional bistability in semiconductor waveguide ring lasers

M. Sorel, P. J. R. Laybourn, G. Giuliani, and S. Donati

Appl. Phys. Lett. 80, 3051 (2002); http://dx.doi.org/10.1063/1.1474619 (3 pages) | Cited 53 times

Online Publication Date: 22 April 2002

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Large-diameter ridge-guided semiconductor lasers weakly coupled to a straight output waveguide show unidirectional operation and directional bistability at currents up to about twice the threshold. The direction of lasing in the ring may be controlled by biasing contacts at either end of the coupled guide. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Wd Fiber lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

E.-M. Pavelescu, C. S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, M. Dumitrescu, and S. Spânulescu

Appl. Phys. Lett. 80, 3054 (2002); http://dx.doi.org/10.1063/1.1470223 (3 pages) | Cited 42 times

Online Publication Date: 22 April 2002

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Show Abstract
We present a 1.3-μm GaInNAs/GaAs quantum-well heterostructure, which consists of a strain-mediating GaInNAs layer grown between a compressive-strained quantum well and a tensile-strained GaNAs layer. Compared to a similar sample with no strain-mediating layer, this heterostructure exhibits improved material properties and remarkable redshift of emission with enhanced light intensity. The observations are based on photoluminescence spectra and x-ray diffraction data measured for the active region of the samples. © 2002 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.67.De Quantum wells

Rate equations of vertical-cavity semiconductor optical amplifiers

P. Royo, R. Koda, and L. A. Coldren

Appl. Phys. Lett. 80, 3057 (2002); http://dx.doi.org/10.1063/1.1476056 (3 pages) | Cited 1 time

Online Publication Date: 22 April 2002

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We rigorously establish the rate equations for vertical-cavity semiconductor optical amplifiers, starting from a general energy rate equation. Our results show that the conventional rate equation used so far in the literature is incorrect because of an inappropriate calculation of the mirror losses. Our calculations include the effect of amplified spontaneous emission and can be used to describe the properties of resonant-cavity-enhanced photodetectors. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.30.De Semiconductor-device characterization, design, and modeling
42.79.Bh Lenses, prisms and mirrors
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
85.60.Gz Photodetectors (including infrared and CCD detectors)

Quantum cascade lasers with double metal-semiconductor waveguide resonators

Karl Unterrainer, Raffaele Colombelli, Claire Gmachl, Federico Capasso, Harold Y. Hwang, A. Michael Sergent, Deborah L. Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 80, 3060 (2002); http://dx.doi.org/10.1063/1.1469657 (3 pages) | Cited 38 times

Online Publication Date: 22 April 2002

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Quantum cascade (QC) lasers with double metal-semiconductor waveguide resonators are reported for operating wavelengths of 19, 21, and 24 μm. The waveguides are based on surface-plasmon modes confined at the metal–semiconductor interfaces on both sides of the active region/injector stack and are not restricted by a cutoff wavelength for the TM polarized intersubband radiation. The double metal-semiconductor resonator devices are fabricated using an epilayer transfer process. Optical confinement factors close to 1 are obtained, with low waveguide losses. The performance of the devices is compared with that of QC lasers based on single-sided surface-plasmon waveguides. The concept of QC laser with double metal-semiconductor waveguide is applicable to a much wider wavelength range. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.40.Ns Metal-nonmetal contacts
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Gn Optical waveguides and couplers

Symmetry-induced perfect transmission of light waves in quasiperiodic dielectric multilayers

R. W. Peng, X. Q. Huang, F. Qiu, Mu Wang, A. Hu, S. S. Jiang, and M. Mazzer

Appl. Phys. Lett. 80, 3063 (2002); http://dx.doi.org/10.1063/1.1468895 (3 pages) | Cited 49 times

Online Publication Date: 22 April 2002

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Resonant transmission of light has been observed in symmetric Fibonacci TiO2/SiO2 multilayers, which is characterized by many perfect transmission peaks. The perfect transmission dramatically decreases when the mirror symmetry in the multilayer structure is deliberately disrupted. Actually, the feature of perfect transmission peaks can be considered as general evidence for dielectric multilayers with symmetric internal structure. It opens a unique way to control light propagation. © 2002 American Institute of Physics.
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78.66.Nk Insulators
42.79.Wc Optical coatings
68.65.Ac Multilayers
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
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