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29 Apr 2002

Volume 80, Issue 17, pp. 3033-3231

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Artificial nanocluster crystal: Lattice of identical Al clusters

Jinfeng Jia, Jun-Zhong Wang, Xi Liu, Qi-Kun Xue, Zhi-Qiang Li, Y. Kawazoe, and S. B. Zhang

Appl. Phys. Lett. 80, 3186 (2002); http://dx.doi.org/10.1063/1.1474620 (3 pages) | Cited 62 times

Online Publication Date: 22 April 2002

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A two-dimensional artificial crystal, which is made up of artificial atoms—identical Al clusters with nanometer size and spacing, was fabricated by taking advantage of surface-mediated clustering on a growth template. In situ scanning tunneling microscopy analysis and first-principles total energy calculations were used to determine the atomic structure of the Al nanoclusters. The Al clusters exhibit more remarkable thermal stability than the In clusters we reported previously. Based on our systematic observations and calculations, the formation mechanism and the high stability of these magic clusters are discussed. © 2002 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
71.15.Nc Total energy and cohesive energy calculations

Field emission from nonaligned carbon nanotubes embedded in a polystyrene matrix

C. H. Poa, S. R. P. Silva, P. C. P. Watts, W. K. Hsu, H. W. Kroto, and D. R. M. Walton

Appl. Phys. Lett. 80, 3189 (2002); http://dx.doi.org/10.1063/1.1474608 (3 pages) | Cited 45 times

Online Publication Date: 22 April 2002

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Low threshold fields of 1.6 V/μm and 2.6 V/μm were obtained for field emission from multiwalled carbon nanotubes and boron-doped multiwalled carbon nanotubes embedded in polystyrene, respectively. A Fowler–Nordheim analysis of the results together with sheet resistivity data illustrate that the higher carbon nanotube concentrations in a polystyrene matrix result in larger effective emission areas, at the expense of higher operating threshold fields. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials

Performance projections for ballistic carbon nanotube field-effect transistors

Jing Guo, Mark Lundstrom, and Supriyo Datta

Appl. Phys. Lett. 80, 3192 (2002); http://dx.doi.org/10.1063/1.1474604 (3 pages) | Cited 63 times

Online Publication Date: 22 April 2002

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The performance limits of carbon nanotube field-effect transistors (CNTFETs) are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to ballistic MOSFETs, ballistic CNTFETs show similar I–V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNTFET with a planar gate geometry provides an on-current that is comparable to that expected for a ballistic MOSFET. Significantly better performance, however, could be achieved with high gate capacitance structures. Because the computed performance limits greatly exceed the performance of recently reported CNTFETs, there is considerable opportunity for progress in device performance. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices
85.30.De Semiconductor-device characterization, design, and modeling

Size effect in mesoscopic epitaxial ferroelectric structures: Increase of piezoelectric response with decreasing feature size

S. Bühlmann, B. Dwir, J. Baborowski, and P. Muralt

Appl. Phys. Lett. 80, 3195 (2002); http://dx.doi.org/10.1063/1.1475369 (3 pages) | Cited 84 times

Online Publication Date: 22 April 2002

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An epitaxial 200 nm thick film of Pb(Zr0.40Ti0.60)O3 (PZT) has been deposited by reactive rf magnetron sputtering on conductive Nb-doped SrTiO3 (100) (STO). The patterning process involved electron-beam lithography of polymethylmethacrylate, fabrication of a 75 nm thick Cr hard mask layer by means of a lift-off process, and dry etching of PZT. The smallest PZT features obtained were 100 nm in lateral dimensions. Piezoelectric sensitive scanning force microscopy in the contact mode revealed a strong increase of the piezoelectric response for feature sizes with lateral dimensions below 300 nm. It is proposed that this behavior is mainly due to vanishing a domains. © 2002 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
77.65.Bn Piezoelectric and electrostrictive constants
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
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