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6 May 2002

Volume 80, Issue 18, pp. 3247-3450

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Structure and piezoelectric properties of sol–gel-derived 0.5 Pb[Yb1/2Nb1/2]O3–0.5 PbTiO3 thin films

Q. Q. Zhang, Q. F. Zhou, and S. Trolier-McKinstry

Appl. Phys. Lett. 80, 3370 (2002); http://dx.doi.org/10.1063/1.1472476 (3 pages) | Cited 10 times

Online Publication Date: 29 April 2002

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0.5 Pb[Yb1/2Nb1/2]O3–0.5 PbTiO3 thin films were deposited on (111) Pt/Ti/SiO2/Si substrates by sol–gel processing using a thin Pb(Zr0.52Ti0.48)O3 seed layer. X-ray diffraction analysis and scanning electron microscopy revealed that the films were strongly (111) oriented, mimicking the orientation of the (111) Pt/Ti/SiO2/Si substrate. No pyrochlore phase was observed by x-ray diffraction and the films had a uniform grain size of about 50–60 nm. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100–10 000 Hz. At 1 kHz, the dielectric permittivity was 1025 and dielectric loss was 0.028. The films exhibited good ferroelectric and piezoelectric properties. The remanent polarization (Pr) was 30 μC/cm2. The effective transverse piezoelectric e31,f coefficient (−4.8 C/m2) of the films was measured using a modified wafer flexure method. © 2002 American Institute of Physics.
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77.55.-g Dielectric thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity
77.65.Bn Piezoelectric and electrostrictive constants
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Depoling a ferroelectric capacitor

M. J. Higgins, A. Krishnan, M. M. J. Treacy, and S. Bhattacharya

Appl. Phys. Lett. 80, 3373 (2002); http://dx.doi.org/10.1063/1.1476063 (3 pages) | Cited 5 times

Online Publication Date: 29 April 2002

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A “shrinking hysteresis loop” method, analogous to degaussing a ferromagnet, is used to depolarize a ferroelectric thin film and reach the origin, nominally the zero polarization-zero applied field state. Scanning piezoresponse imaging of the depoled state shows fragmentation into domains of up and down polarization that constitute the zero polarization state. Furthermore, the depoling method improves the left–right symmetry of the coercive field in “imprinted” samples. © 2002 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects

Epitaxial growth and planar dielectric properties of compositionally graded (Ba1−xSrx)TiO3 thin films prepared by pulsed-laser deposition

Xinhua Zhu, Nui Chong, Helen Lai-Wah Chan, Chung-Loong Choy, Kin-Hung Wong, Zhiguo Liu, and Naiben Ming

Appl. Phys. Lett. 80, 3376 (2002); http://dx.doi.org/10.1063/1.1475367 (3 pages) | Cited 37 times

Online Publication Date: 29 April 2002

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We have heteroepitaxially deposited compositionally graded (Ba1−xSrx)TiO3 (BST) thin films with increasing x from 0.0 to 0.25 on (100)-oriented MgO substrates using pulsed-laser deposition. The compositional gradients along the depth in the graded films were characterized by Rutherford backscattering spectroscopy. By using surface interdigital electrodes, the planar dielectric response of epitaxial graded BST films was measured as a function of frequency, temperature, and dc applied voltage. At room temperature, the dielectric constant of the graded BST film was about 450 with a dielectric loss, tan δ of 0.007 at 100 kHz. Measurements varying the dc bias voltage showed hysteresis of the dielectric response and a tunability of 25% at an applied electric field of 80 kV/cm. The graded BST films undergo a diffuse phase transition with a broad and flat profile of the capacitance versus temperature. Such behavior of the dielectric response in graded BST films is attributed to the presence of the compositional and/or residual strain gradients in the epitaxial graded films. With such a graded structure, it is possible to a build a dielectric thin-film capacitor with a low-temperature dependence of the capacitor over a broad temperature regime. © 2002 American Institute of Physics.
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68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.80.-e Ferroelectricity and antiferroelectricity
61.66.Bi Elemental solids
61.66.Dk Alloys
81.15.Fg Pulsed laser ablation deposition
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
84.32.Tt Capacitors
68.60.Bs Mechanical and acoustical properties

Time-resolved study of SrTiO3 homoepitaxial pulsed-laser deposition using surface x-ray diffraction

G. Eres, J. Z. Tischler, M. Yoon, B. C. Larson, C. M. Rouleau, D. H. Lowndes, and P. Zschack

Appl. Phys. Lett. 80, 3379 (2002); http://dx.doi.org/10.1063/1.1477279 (3 pages) | Cited 25 times

Online Publication Date: 29 April 2002

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Homoepitaxy of SrTiO3 by pulsed-laser deposition has been studied using in situ time-resolved surface x-ray diffraction in the temperature range of 310 °C to 780 °C. Using a two-detector configuration, surface x-ray diffraction intensities were monitored simultaneously at the (0 0 ½) specular and the (0 1 ½) off-specular truncation rod positions. Abrupt intensity changes in both the specular and off-specular rods after laser pulses indicated prompt crystallization into SrTiO3 layers followed by slower intra- and interlayer surface rearrangements on time scales of seconds. Specular rod intensity oscillations indicated layer-by-layer growth, while off-specular rod intensity measurements suggested the presence of transient in-plane lattice distortions for depositions above 600 °C. © 2002 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology
78.47.-p Spectroscopy of solid state dynamics
68.49.Uv X-ray standing waves

Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures

T. Kado

Appl. Phys. Lett. 80, 3382 (2002); http://dx.doi.org/10.1063/1.1476707 (3 pages) | Cited 1 time

Online Publication Date: 29 April 2002

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Resonant tunneling through metal (Ag–Ti)/insulator (MgO) triple barrier structures has been demonstrated. The multilayers with the triple barrier structures were epitaxially grown on MgO (001) substrates under 473 K by the electron beam evaporation method. For the measurement of current–voltage characteristics, the mesa-isolated diodes were fabricated by photolithography. The observed current peaks in the current–voltage characteristics of the diodes could be explained as the resonant tunneling current. © 2002 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application

Hyo Sik Chang, Sanghun Jeon, Hyunsang Hwang, and Dae Won Moon

Appl. Phys. Lett. 80, 3385 (2002); http://dx.doi.org/10.1063/1.1477266 (3 pages) | Cited 12 times

Online Publication Date: 29 April 2002

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The thermal stability of a nanolaminate (Al2O3/ZrO2/Al2O3) gate stack prepared by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy, and x-ray photoelectron spectroscopy. We observed that the structure was stable up to 1000 °C under ultrahigh vacuum conditions. However, annealing in a nitrogen or oxygen ambient at 1 atm yielded the formation of an interfacial Zr–Al silicate layer at much lower temperatures. The growth of the interfacial silicate layer could be significantly reduced during furnace annealing via the use of plasma nitridation. © 2002 American Institute of Physics.
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68.60.Dv Thermal stability; thermal effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Cc Kinetics of defect formation and annealing
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Rapid biaxial texture development during nucleation of MgO thin films during ion beam-assisted deposition

Rhett T. Brewer and Harry A. Atwater

Appl. Phys. Lett. 80, 3388 (2002); http://dx.doi.org/10.1063/1.1476385 (3 pages) | Cited 16 times

Online Publication Date: 29 April 2002

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We propose a mechanism for the nucleation of highly aligned biaxially textured MgO on amorphous Si3N4 during ion beam-assisted deposition. Using transmission electron microscopy, reflection high-energy electron diffraction, energy dispersive x-ray analysis, and ellipsometery, we have observed that highly aligned biaxially textured grains emerge from a “diffraction-amorphous” film when the film thickens from 3.5 to 4.5 nm. Transmission electron microscopy dark-field images also show the onset of rapid grain growth during this same film thickness interval. These results suggest biaxial texturing through aligned solid phase crystallization. © 2002 American Institute of Physics.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Dielectric nonlinearity and stochastic effects in strontium titanate

Alp T. Findikoğlu, Roberto Camassa, Grant Lythe, and Q. X. Jia

Appl. Phys. Lett. 80, 3391 (2002); http://dx.doi.org/10.1063/1.1477278 (3 pages) | Cited 8 times

Online Publication Date: 29 April 2002

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We report on experiments using compact coplanar waveguide devices, incorporating thin-film superconducting YBa2Cu3O7 electrodes. The substrate is strontium titanate, whose nonlinear dielectric properties are dependent on temperature and applied electric field. Close to zero dc bias, the frequency-doubled microwave power output increases by several orders of magnitude with modest broadband noise input. Experimental results are supported by analytical and numerical calculations based on a nonlinear wave equation. © 2002 American Institute of Physics.
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84.40.Az Waveguides, transmission lines, striplines
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Optical limiting in SrBi2Ta2O9 and PbZrxTi1−xO3 ferroelectric thin films

Pingxiong Yang, Jianfeng Xu, John Ballato, Robert W. Schwartz, and David L. Carroll

Appl. Phys. Lett. 80, 3394 (2002); http://dx.doi.org/10.1063/1.1477618 (3 pages) | Cited 28 times

Online Publication Date: 29 April 2002

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Optical limiting effects in SrBi2Ta2O9 (SBT) and PbZrxTi1−xO3 (PZT) ferroelectric thin films have been observed with nanosecond laser pulses at 1.064 μm. Limiting thresholds were found to be 5.84 J/cm2 for SBT and between 4.53 and 5.93 J/cm2 for PZT, depending on composition, whereas saturation thresholds for the films were about 2.92 J/cm2 and between 2.27 J/cm2 to 2.97 J/cm2, respectively. Damage thresholds around 10.0 J/cm2 and between 10.37 J/cm2 to 10.54 J/cm2, respectively for SBT and PZT, were also determined. A possible mechanism for the observed limiting, nonlinear optical scattering from the ferroelectric domains, is discussed. These results elucidate the origin of the nonlinear optical properties in perovskite-type ferroelectric thin films and show the potential role such materials can play in photonic devices based on nonlinear optical effects. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.70.Qs Photonic bandgap materials
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
77.80.Dj Domain structure; hysteresis
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