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6 May 2002

Volume 80, Issue 18, pp. 3247-3450

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Beam steering in waveguide arrays

T. Pertsch, T. Zentgraf, U. Peschel, A. Bräuer, and F. Lederer

Appl. Phys. Lett. 80, 3247 (2002); http://dx.doi.org/10.1063/1.1476720 (3 pages) | Cited 18 times

Online Publication Date: 29 April 2002

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We demonstrate that highly efficient beam steering and switching can be achieved in thermo-optic waveguide arrays. For a given initial excitation, we find the position of the output field to depend on the transverse temperature gradient. By changing this gradient, we manage to steer the beam across the entire array. Diffractive spreading is almost suppressed and the beam retains its initial shape. © 2002 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Interferential coupling effect on the whispering-gallery mode lasing in a double-layered microcylinder

Hee-Jong Moon and Kyungwon An

Appl. Phys. Lett. 80, 3250 (2002); http://dx.doi.org/10.1063/1.1476399 (3 pages) | Cited 18 times

Online Publication Date: 29 April 2002

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Enhanced mode selection through a strong interferential coupling effect was observed in a double-layered cylindrical microcavity laser. The coupling was induced by partial reflection and recombination with refracted light on the internal circular boundary of the fused silica capillary tube, filled with a dye-doped liquid having lower reflective index than that of fused silica. The observed interference period agreed well with the prediction by a ray-optic model. © 2002 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Mv Dye lasers
42.25.Hz Interference

Mode identification in spherical microcavities doped with quantum dots

B. Möller, M. V. Artemyev, U. Woggon, and R. Wannemacher

Appl. Phys. Lett. 80, 3253 (2002); http://dx.doi.org/10.1063/1.1475364 (3 pages) | Cited 19 times

Online Publication Date: 29 April 2002

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Using imaging spectroscopy at the diffraction limit, a polarization-sensitive mode mapping allows the experimental identification of transverse electric and transverse magnetic modes for spherical microcavities. The method is applied to microspheres surface covered by CdSe quantum dots. A theoretical estimate of the minimum mode volume excited by a single, anisotropic quantum dot is given with Q/V larger than 1000 μm−3 for the parameters of the experimentally studied microcavities. © 2002 American Institute of Physics.
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78.67.Hc Quantum dots
78.40.Fy Semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.50.-p Quantum optics

Infrared electroluminescence from an organic ionic dye containing no rare-earth ions

Hiroyuki Suzuki

Appl. Phys. Lett. 80, 3256 (2002); http://dx.doi.org/10.1063/1.1476711 (3 pages) | Cited 23 times

Online Publication Date: 29 April 2002

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This paper reports the electroluminescence (EL) characteristics of a single-layer light-emitting diode (LED) with an organic functional layer, which is composed of an organic ionic emissive dye, IR1051, an electron transporting material, 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole, and poly(N-vinylcarbazole). The LED exhibits IR EL in the 0.9–1.5 μm range, which is ascribable to IR1051 with reference to steady-state absorption and photoluminescence measurements. The present study demonstrates a class of IR EL materials containing no rare earth ions and compatible with silicon-based photocircuits. © 2002 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials

Fiber Bragg gratings with enhanced thermal stability

Gilberto Brambilla and Harvey Rutt

Appl. Phys. Lett. 80, 3259 (2002); http://dx.doi.org/10.1063/1.1475366 (3 pages) | Cited 11 times

Online Publication Date: 29 April 2002

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Gratings written in tin-doped silica fibers by using a 248 nm excimer laser exhibit extremely high thermal stability. Isothermal measurements up to 1100 K demonstrate significant advantages over conventional fiber gratings. Extrapolations from experimental data indicated that gratings operating at 500 K for ten years will retain more than 99% of the initial strength. © 2002 American Institute of Physics.
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42.79.Dj Gratings
42.81.-i Fiber optics

Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

Y. Wei, A. Gin, M. Razeghi, and G. J. Brown

Appl. Phys. Lett. 80, 3262 (2002); http://dx.doi.org/10.1063/1.1476395 (3 pages) | Cited 42 times

Online Publication Date: 29 April 2002

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We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010 cm Hz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation–recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

A. D. Stiff-Roberts, S. Chakrabarti, S. Pradhan, B. Kochman, and P. Bhattacharya

Appl. Phys. Lett. 80, 3265 (2002); http://dx.doi.org/10.1063/1.1476387 (3 pages) | Cited 14 times

Online Publication Date: 29 April 2002

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We demonstrate normal incidence infrared imaging with quantum dot infrared photodetectors using a raster-scan technique. The device heterostructure, containing multiple layers of InAs/GaAs self-organized quantum dots, were grown by molecular-beam epitaxy. Individual devices have been operated at temperatures as high as 150 K and, at 100 K, are characterized by λpeak = 3.72 μm, Jdark = 6×10−10 A/cm2 for a bias of 0.1 V, and D∗ = 2.94×109 cm Hz1/2/W at a bias of 0.2 V. Raster-scan images of heated objects and infrared light sources were obtained with a small (13×13) interconnected array of detectors (to increase the photocurrent) at 80 K. © 2002 American Institute of Physics.
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78.67.Hc Quantum dots
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics

Gianlorenzo Masini, Valentino Cencelli, Lorenzo Colace, Francesco De Notaristefani, and Gaetano Assanto

Appl. Phys. Lett. 80, 3268 (2002); http://dx.doi.org/10.1063/1.1477267 (3 pages) | Cited 15 times

Online Publication Date: 29 April 2002

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Using a low-temperature technology for polycrystalline Ge deposition, we report on the monolithic integration of an array of near-infrared Ge photodiodes on Si complementary metal–oxide–semiconductor (CMOS) electronics. The integrated microsystem consists of a linear array of 120×120 μm2 pixels, an analog CMOS multiplexer and a transimpedance amplifier. The resulting photoresponse covers the near-infrared up to 1.6 μm. © 2002 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.Tv Field effect devices

Light-controllable room temperature negative differential resistance in deep-trench type nitride–oxide tunneling device and its applications

Fen Chen, Baozhen Li, and Kai D Feng

Appl. Phys. Lett. 80, 3271 (2002); http://dx.doi.org/10.1063/1.1476959 (3 pages) | Cited 2 times

Online Publication Date: 29 April 2002

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This study presents the room-temperature operation of deep-trench type nitride–oxide metal–insulator–semiconductor three-terminal tunneling devices which were fabricated by a standard metal–oxide–semiconductor process. It is instructive to observe a photoinduced N-type negative differential resistance (NDR) with a high peak-to-valley current ratio for device operated under negative polysilicon node bias under tungsten lamp illumination. An explanation was provided for the NDR phenomenon with proper three-terminal biasing. The sudden current drop under light illumination was caused by the sudden reduction of the two-carrier conduction due to Esaki band-to-band tunneling. The NDR amplitude could be modulated by light intensity. The position of the NDR current peak was tunable at different voltages with different p-well biases. The optoelectronic response of nitride–oxide devices we investigate here may open an application window for the nitride–oxide system in silicon-based optoelectronic integrated circuits, wireless communications, and future quantum devices. © 2002 American Institute of Physics.
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85.60.Bt Optoelectronic device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate

L. Diehl, H. Sigg, G. Dehlinger, D. Grützmacher, E. Müller, U. Gennser, I. Sagnes, T. Fromherz, Y. Campidelli, O. Kermarrec, D. Bensahel, and J. Faist

Appl. Phys. Lett. 80, 3274 (2002); http://dx.doi.org/10.1063/1.1476723 (3 pages) | Cited 15 times

Online Publication Date: 29 April 2002

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We present intersubband absorption measurements performed on p-type quasistrain-compensated modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrates. Several intersubband absorption peaks are observed up to room temperature. A strong confinement shift of the resonance occuring between the ground and the first excited heavy hole states has been observed, with the absorption peak shifting from λ = 5.3 μm to as short as 3.8 μm. Excellent overall agreement with a 6 band k⋅p calculation is obtained, proving the accuracy of recently predicted values of band offsets. © 2002 American Institute of Physics.
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78.67.De Quantum wells
73.21.Fg Quantum wells
78.66.Db Elemental semiconductors and insulators
78.66.Li Other semiconductors
71.15.Qe Excited states: methodology

1.3 μm InAs quantum dot laser with To = 161 K from 0 to 80 °C

O. B. Shchekin and D. G. Deppe

Appl. Phys. Lett. 80, 3277 (2002); http://dx.doi.org/10.1063/1.1476708 (3 pages) | Cited 157 times

Online Publication Date: 29 April 2002

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Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 μm InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 °C. 1.3 μm ground state lasing is obtained up to a temperature of 167 °C. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.La Quantum dots

Hybrid time-resolved spectroscopic system for evaluating laser material using a table-top-sized, low-jitter, 3-MeV picosecond electron-beam source with a photocathode

Yuji Suzuki, Toshimasa Kozeki, Shingo Ono, Hidetoshi Murakami, Hideyuki Ohtake, Nobuhiko Sarukura, Terunobu Nakajyo, Fumio Sakai, and Yasushi Aoki

Appl. Phys. Lett. 80, 3280 (2002); http://dx.doi.org/10.1063/1.1476384 (3 pages) | Cited 3 times

Online Publication Date: 29 April 2002

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Hybrid time-resolved spectroscopy of laser media comparing electron-beam excitation and optically excited cases is performed using a newly developed, table-top-sized, low-jitter, 3-MeV picosecond electron-beam source with a photocathode. The properties of an electron-beam-pumped Ce3+:LiCaAlF6 (Ce:LiCAF) ultraviolet laser medium significant differ from those of an optically pumped medium. © 2002 American Institute of Physics.
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07.60.Rd Visible and ultraviolet spectrometers
42.55.Rz Doped-insulator lasers and other solid state lasers

Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator

Michael Kneissl, Thomas L. Paoli, Peter Kiesel, David W. Treat, Mark Teepe, Naoko Miyashita, and Noble M. Johnson

Appl. Phys. Lett. 80, 3283 (2002); http://dx.doi.org/10.1063/1.1477270 (3 pages) | Cited 15 times

Online Publication Date: 29 April 2002

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Q-switching is demonstrated in a two-section InGaN multiple-quantum-well (MQW) laser diode consisting of an electroabsorption modulator and amplifier (gain) section. The modulator and gain sections are optically coupled and share the same InGaN MQW active region, but they are electrically separated by a narrow dry-etched trench. Applying a reverse bias voltage to the modulator section controls the absorption in the modulator portion of the device by compensating the piezoelectric field in the InGaN quantum wells. Changes in the absorption coefficient as large as 5000 cm−1 were realized with a moderate reverse bias of 7.2 V. By forward biasing, the amplifier section at a constant current of 225 mA and by controlling the reverse bias modulator voltage, the output power of the two-section laser diode could be switched between <0.5 mW (off state) and more than 3 mW (on state) with a laser emission wavelength near 401 nm. © 2002 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Hp Optical processors, correlators, and modulators
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.82.Gw Other integrated-optical elements and systems
42.60.Fc Modulation, tuning, and mode locking

Near field imaging with negative dielectric constant lenses

J. T. Shen and P. M. Platzman

Appl. Phys. Lett. 80, 3286 (2002); http://dx.doi.org/10.1063/1.1471933 (3 pages) | Cited 60 times

Online Publication Date: 29 April 2002

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A recent analysis by Pendry [J. B. Pendry, Phys. Rev. Lett. 85, 3966 (2000)] shows that a dielectric slab with a dielectric constant ϵ = −1 can produce a perfect image in the electrostatic limit (c→∞), independent of the permeability μ, and therefore is a perfect lens. Here we include retardation effects and show how distance and dissipation make the lens no longer perfect. Nevertheless we conclude that very significant improvements over conventional near field imaging may be obtained in the microwave regime. © 2002 American Institute of Physics.
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42.30.Wb Image reconstruction; tomography
42.79.Bh Lenses, prisms and mirrors

Tunable diode-pumped continuous-wave Cr2+:ZnSe laser

Evgeni Sorokin and Irina T. Sorokina

Appl. Phys. Lett. 80, 3289 (2002); http://dx.doi.org/10.1063/1.1479214 (3 pages) | Cited 19 times

Online Publication Date: 29 April 2002

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A midinfrared broadly tunable around 2.5 μm room-temperature continuous-wave diode-pumped Cr:ZnSe laser is reported. The laser is tunable over 350 nm and delivers up to 70 mW of the output radiation at 460 mW of the absorbed pump power and 17.5% slope efficiency. We observe the analog of the optical switching process, where the laser output is strongly modulated by only a few milliwatts of the visible radiation. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
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