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13 May 2002

Volume 80, Issue 19, pp. 3467-3650

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Electron field emission from boron-nitride nanofilms

Takashi Sugino, Chiharu Kimura, and Tomohide Yamamoto

Appl. Phys. Lett. 80, 3602 (2002); http://dx.doi.org/10.1063/1.1477622 (3 pages) | Cited 45 times

Online Publication Date: 7 May 2002

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Hexagonal polycrystalline boron-nitride (BN) films are synthesized on Si substrates by plasma-assisted chemical-vapor deposition. In the case of BN films thicker than 20 nm, the turn-on electric field of the electron emission decreases with increasing surface roughness. On the other hand, in the case of BN film as thin as 8–10 nm, it is found that the turn-on electric field is reduced to 8.3 V/μm in spite of the surface of the BN nanofilm being flat, as well as the Si substrate. The Fowler–Nordheim (FN) plot of the field-emission characteristics of the BN nanofilm indicates a straight line, suggesting the presence of FN tunneling. This finding means that introduction of the BN nanofilm leads to a significant reduction in the effective potential barrier height. © 2002 American Institute of Physics.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.20.At Surface states, band structure, electron density of states
68.37.Ps Atomic force microscopy (AFM)

Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution

S. C. Qu, W. H. Zhou, F. Q. Liu, N. F. Chen, Z. G. Wang, H. Y. Pan, and D. P. Yu

Appl. Phys. Lett. 80, 3605 (2002); http://dx.doi.org/10.1063/1.1478152 (3 pages) | Cited 38 times

Online Publication Date: 7 May 2002

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Monodispersed ZnS and Eu3+-doped ZnS nanocrystals have been prepared through the co-precipitation reaction of inorganic precursors ZnCl2, EuCl3, and Na2S in a water/methanol binary solution. The mean particle sizes are about 3–5 nm. The structures of the as-prepared ZnS nanoparticles are cubic (zinc blende) as demonstrated by an x-ray powder diffraction. Photoluminescence studies showed a stable room temperature emission in the visible spectrum region for all the samples, with a broadening in the emission band and, in particular, a partially overlapped twin peak in the Eu3+-doped ZnS nanocrystals. The experimental results also indicated that Eu3+-doped ZnS nanocrystals, prepared by controlling synthetic conditions, were stable. © 2002 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
61.72.uj III-V and II-VI semiconductors
81.07.Bc Nanocrystalline materials
81.10.Dn Growth from solutions

Cerium-ion-doped yttrium aluminum garnet nanophosphors prepared through sol-gel pyrolysis for luminescent lighting

Chung-Hsin Lu and R. Jagannathan

Appl. Phys. Lett. 80, 3608 (2002); http://dx.doi.org/10.1063/1.1475772 (3 pages) | Cited 39 times

Online Publication Date: 7 May 2002

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Luminescent Y3Al5O12: Ce3+ [yttrium aluminum garnet (YAG):Ce3+] nanoceramics (5–50 nm) have been prepared through a facile sol-gel pyrolysis route. A blueshift of about 720 cm−1 in the reflectance spectra near the absorption edge can be observed for YAG:Ce3+ nanoparticles (having an average particle size around 5 nm) with respect to the submicron powders (∼0.9 μm). Furthermore, the scope of application for this important luminescent system can be extended by isostructural substitution with heavier cations such as Ba2+. This substitution giving rise to an oxygen-vacancy defect complex, that exhibits certain size-sensitive exciton-impurity energy-transfer property in YAG:Ce3+ nanoparticles. © 2002 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
75.50.Gg Ferrimagnetics
78.55.Hx Other solid inorganic materials
61.72.Yx Interaction between different crystal defects; gettering effect
71.35.-y Excitons and related phenomena

Synthesis of boron nitride nanowires

K. F. Huo, Z. Hu, F. Chen, J. J. Fu, Y. Chen, B. H. Liu, J. Ding, Z. L. Dong, and T. White

Appl. Phys. Lett. 80, 3611 (2002); http://dx.doi.org/10.1063/1.1479213 (3 pages) | Cited 29 times

Online Publication Date: 7 May 2002

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A chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale α-FeB particles at 1100 °C. Boron content in the product comes from the α-FeB catalyst itself. Transmission electron microscopic image indicates an abundant quantity of BN nanowires with diameter about 20 nm and length up to several tens of microns. The product has also been characterized by high-resolution electron microscopy and electron energy loss spectrometer. The perfectly straight lattice fringes with an interlayer spacing of about 0.333 nm corresponding to d0002 spacing of h-BN indicate that the BN nanowires are well crystallized. Also, a growth mechanism has been speculated. © 2002 American Institute of Physics.
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68.65.La Quantum wires (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.20.Uv Electron energy loss spectroscopy
68.37.Lp Transmission electron microscopy (TEM)
61.46.-w Structure of nanoscale materials

Nanoembossing of thermoplastic polymers for microfluidic applications

V. Studer, A. Pépin, and Y. Chen

Appl. Phys. Lett. 80, 3614 (2002); http://dx.doi.org/10.1063/1.1479202 (3 pages) | Cited 35 times

Online Publication Date: 7 May 2002

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We present a method for the fabrication of plastic microfluidic devices based on nanoembossing and thermal bonding. By nanoembossing of thermoplastic polymer pellets, both microfluidic deep channels and high resolution features can be formed using a silicon mold fabricated by electron beam lithography and reactive ion etching. By thermal bonding with another plastic sheet, the fabricated microfluidic devices can be sealed without clogging. Observation of pressure driven and electrokinetic flows through high density pillar arrays indicates the feasibility of nanofluidic analysis using plastic devices. © 2002 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.16.Nd Micro- and nanolithography
47.85.Np Fluidics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.Cf Surface cleaning, etching, patterning
81.10.Fq Growth from melts; zone melting and refining

Nanomechanical resonant structures as tunable passive modulators of light

L. Sekaric, M. Zalalutdinov, S. W. Turner, A. T. Zehnder, J. M. Parpia, and H. G. Craighead

Appl. Phys. Lett. 80, 3617 (2002); http://dx.doi.org/10.1063/1.1479209 (3 pages) | Cited 13 times

Online Publication Date: 7 May 2002

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We report on the optical parametric excitation of silicon nanomechanical resonant structures. The threshold laser power needed to set these structures into self-oscillation was estimated to be around 70 μW. We measured resonant frequencies of up to 38 MHz by optical excitation; this method should extend to much higher frequencies. Under optical amplification of motion, the spectral response at resonance narrowed to the equivalent of a mechanical quality factor >20 000 at room temperature. These structures act as frequency tunable passive modulators of light, requiring no additional drive. © 2002 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.82.Gw Other integrated-optical elements and systems
78.66.Db Elemental semiconductors and insulators

Field emission from crystalline copper sulphide nanowire arrays

Jun Chen, S. Z. Deng, N. S. Xu, Suhua Wang, Xiaogang Wen, Shihe Yang, Chunlei Yang, Jiannong Wang, and Weikun Ge

Appl. Phys. Lett. 80, 3620 (2002); http://dx.doi.org/10.1063/1.1478149 (3 pages) | Cited 82 times

Online Publication Date: 7 May 2002

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Straight crystalline copper sulphide (Cu2S) nanowire arrays have been grown by using a simple gas–solid reaction at room temperature. These were demonstrated to exhibit semiconductor properties. Field emission was observed at a field of ∼ 6 MV/m, and its current-field characteristics deviate from Fowler–Nordheim theory, i.e., showing a nonlinear Fowler–Nordheim plot. The uniform emission from the whole arrays was observed using transparent anode technique, and their variation with applied field was recorded. The emission from individual nanowires was also studied using a field emission microscope, and was found to consist of a number of spatially resolved diffuse spots. Finally, stable emission current at different levels and over time was recorded. These findings indicate that semiconductor nanowires as cold cathode have a potential future, worthy of further comprehensive investigation. The technical importance of using semiconductor nanowires as cold cathode emitter is given. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials

Evolution of Ge/Si(100) island morphology at high temperature

Yangting Zhang, Margaret Floyd, K. P. Driver, Jeff Drucker, P. A. Crozier, and David J. Smith

Appl. Phys. Lett. 80, 3623 (2002); http://dx.doi.org/10.1063/1.1479204 (3 pages) | Cited 17 times

Online Publication Date: 7 May 2002

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Atomic force microscopy, transmission electron microscopy, and electron energy-loss spectroscopy have been used to study the size, structure, and composition of Ge/Si(100) islands grown by molecular beam epitaxy at 700 °C. It is found that the island evolution is qualitatively different than for growth at lower substrate temperatures. For growth at 1.4 ML/min, the composition is determined to be Si0.56Ge0.44 and appears to be independent of island size. A higher growth rate, 4.8 ML/min, kinetically stabilizes pure Ge pyramids prior to Si interdiffusion taking place. These pure Ge clusters are absent at the lower growth rate, demonstrating the influence of deposition rate on island evolution. This result indicates that deposition kinetics can control island composition and morphology without varying growth temperature and associated thermally activated processes. © 2002 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.43.Fg Adsorbate structure (binding sites, geometry)
68.37.Ps Atomic force microscopy (AFM)
68.37.Lp Transmission electron microscopy (TEM)
79.20.Uv Electron energy loss spectroscopy

Surface-plasmon-resonance-induced absorption of a metal–oxide nanoparticle composite

J. P. Zhao, M. Lu, Z. Y. Chen, and J. W. Rabalais

Appl. Phys. Lett. 80, 3626 (2002); http://dx.doi.org/10.1063/1.1477935 (3 pages) | Cited 5 times

Online Publication Date: 7 May 2002

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A surface-plasmon-resonance (SPR)-induced absorption band has been found for low-energy Ti+ implanted (subplanted) into single-crystalline SiO2 at specific substrate temperatures. The observed SPR absorption band is in the 650–850 nm wavelength range, i.e., in the visible (red) and near-infrared regions, indicating the formation of Ti nanoparticles in the subsurface layer of the SiO2 matrix. This was confirmed by calculations based on the Mie scattering theory. The SPR absorption band becomes distinguishable only at temperatures ⩾600 °C and reached its maximum at 800 °C (1/2Tm of elemental Ti). The intensity is significantly reduced at a temperature of 1000 °C (2/3Tm). The evolution of the SPR absorption with substrate temperature is discussed. © 2002 American Institute of Physics.
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73.22.Lp Collective excitations
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
78.68.+m Optical properties of surfaces
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Pg Disordered solids
78.35.+c Brillouin and Rayleigh scattering; other light scattering

InAs self-assembled quantum-dot lasers grown on (100) InP

C. Nì. Allen, P. J. Poole, P. Marshall, J. Fraser, S. Raymond, and S. Fafard

Appl. Phys. Lett. 80, 3629 (2002); http://dx.doi.org/10.1063/1.1479200 (3 pages) | Cited 35 times

Online Publication Date: 7 May 2002

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Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on (100) InP substrate to form a laser diode. The QD ensemble has a density of 1.5×1010 cm−2 and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm×150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems
78.67.Hc Quantum dots
81.05.Ea III-V semiconductors
81.16.Dn Self-assembly
81.07.Ta Quantum dots
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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