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27 May 2002

Volume 80, Issue 21, pp. 3883-4065

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Strain-induced tuning of metal–insulator transition in NdNiO3

Ashutosh Tiwari, C. Jin, and J. Narayan

Appl. Phys. Lett. 80, 4039 (2002); http://dx.doi.org/10.1063/1.1480475 (3 pages) | Cited 15 times

Online Publication Date: 20 May 2002

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We have used the lattice-mismatch epitaxial strain, induced by the constraint of epitaxy, to tune the metal–insulator (M–I) transition temperature of NdNiO3 films grown on Si(100) substrate. Films were integrated with the Si(100) substrate using several combinations of thin buffer layers. A systematic variation in the electrical transport properties has been observed with the change in the lattice mismatch between NdNiO3 and the buffer layer just below it. It was shown that by the proper selection of the substrate and thickness of film, it is possible to control and precisely tune the M–I transition temperature of NdNiO3 to any desired value between 12 and 300 K (temperature range of this study). Fine control over the M–I transition temperature of these films is likely to boost the potential of these films for their applications in bolometers, actuators, and thermal/optical switches in next-generation perovskite-based microelectronic devices. © 2002 American Institute of Physics.
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72.60.+g Mixed conductivity and conductivity transitions
73.61.-r Electrical properties of specific thin films
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology

Investigation of the interfacial properties of laminated polymer diodes

Tzung-Fang Guo, Gufeng He, Seungmoon Pyo, and Yang Yang

Appl. Phys. Lett. 80, 4042 (2002); http://dx.doi.org/10.1063/1.1481542 (3 pages) | Cited 6 times

Online Publication Date: 20 May 2002

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Plastic lamination has become a promising approach to the fabrication of high-performance polymeric electronic devices. [T.-F. Guo, S. Pyo, S.-C. Chang, and Y. Yang, Adv. Funct. Mater. 11, 339 (2001)]. The major challenge for achieving high-performance laminated devices is the control of interface quality. In this letter, the various interfaces between two organic films have been investigated using atomic force microscope and impedance spectroscopy. Our results indicate the device performance is directly related to the formation of the interface. We attribute the better charge injection and higher electroluminescence efficiency of a laminated polymer light-emitting diode is due to the nanoscale surface roughness at the laminating interface. © 2002 American Institute of Physics.
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68.35.Ct Interface structure and roughness
85.60.Jb Light-emitting devices
61.41.+e Polymers, elastomers, and plastics
78.66.Qn Polymers; organic compounds
73.61.Ph Polymers; organic compounds
68.37.Ps Atomic force microscopy (AFM)
78.60.Fi Electroluminescence

Carbon nanotube electron emitters with a gated structure using backside exposure processes

Deuk-Seok Chung, S. H. Park, H. W. Lee, J. H. Choi, S. N. Cha, J. W. Kim, J. E. Jang, K. W. Min, S. H. Cho, M. J. Yoon, J. S. Lee, C. K. Lee, J. H. Yoo, Jong-Min Kim, J. E. Jung, et al.

Appl. Phys. Lett. 80, 4045 (2002); http://dx.doi.org/10.1063/1.1480104 (3 pages) | Cited 85 times

Online Publication Date: 20 May 2002

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We have fabricated fully vacuum-sealed 5 in. diagonal carbon nanotube field-emission displays of a gated structure with reliable electron emission characteristics. Single-walled carbon nanotube tips were implemented into the gate structure using self-aligned backside exposure of photosensitive carbon nanotube paste. An onset gate electrode voltage for emission was about 60 V and the luminance as high as 510 cd/m2 was exhibited under an application of 100 V and 1.5 kV to gate electrode and anode, respectively. © 2002 American Institute of Physics.
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85.45.Fd Field emission displays (FEDs)
85.35.Kt Nanotube devices
79.70.+q Field emission, ionization, evaporation, and desorption
81.07.De Nanotubes

High frequency components of current fluctuations in semiconductor tunneling barriers

Xavier Oriols, Ferran Martín, and Jordi Suñé

Appl. Phys. Lett. 80, 4048 (2002); http://dx.doi.org/10.1063/1.1482136 (3 pages) | Cited 7 times

Online Publication Date: 20 May 2002

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The power spectral density of current noise in phase-coherent semiconductor tunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An enhancement of the power spectral density of the current fluctuations is predicted for very high frequencies. The experimental measurement of this high frequency effect is discussed as a possible test of Bohm trajectories. © 2002 American Institute of Physics.
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73.50.Mx High-frequency effects; plasma effects
73.50.Td Noise processes and phenomena
73.40.Gk Tunneling

Nanolithography based on patterned metal transfer and its application to organic electronic devices

Changsoon Kim, Max Shtein, and Stephen R. Forrest

Appl. Phys. Lett. 80, 4051 (2002); http://dx.doi.org/10.1063/1.1481980 (3 pages) | Cited 45 times

Online Publication Date: 20 May 2002

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We demonstrate a patterning method capable of producing features of submicron scale based on the transfer of a metal film from a stamp to a substrate assisted by cold welding. The patterned metal film can be used as an etch mask to replicate the pattern on the substrate, or the film itself can serve as contact electrodes for a wide range of electronic devices. We demonstrate the versatility of the technique by fabricating a polymer grating on SiO2 with lateral dimensions <80 nm and a pattern resolution approaching 10 nm, and by fabricating organic solar cells and pentacene channel organic thin-film transistors with channel lengths as short as 1 μm. © 2002 American Institute of Physics.
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81.16.Nd Micro- and nanolithography
85.40.Hp Lithography, masks and pattern transfer
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Dj Gratings

Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors

Kian-Giap Gan, Jin-Wei Shi, Yen-Hung Chen, Chi-Kuang Sun, Yi-Jen Chiu, and John E. Bowers

Appl. Phys. Lett. 80, 4054 (2002); http://dx.doi.org/10.1063/1.1482139 (3 pages) | Cited 15 times

Online Publication Date: 20 May 2002

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High-output-power and high-bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors. In this letter, we report high peak-output-voltage (∼20 V) and peak-output-current (∼400 mA, 50 Ω load) together with ultrahigh-speed performances (1.5 ps, 220 GHz), observed in low-temperature-grown-GaAs (LTG-GaAs) based metal-semiconductor-metal (MSM) traveling-wave photodetectors (TWPDs) at a wavelength of 800 nm. Ultrahigh-peak-output-power and ultrahigh-electrical-bandwidth performances were achieved due to the superior MSM microwave guiding structure and a short carrier trapping time in the LTG-GaAs layer, which reduced the space-charge screening effect and increased the photoabsorption volume without sacrificing electrical bandwidth significantly. We also observed different bias-dependent nonlinear behaviors in MSM TWPDs under high and low illuminated optical power excitations, which are possibly dominated by the space-charge screening and the lifetime increasing effects, respectively. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Sx Metal-semiconductor-metal structures
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
77.22.Jp Dielectric breakdown and space-charge effects
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