APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

27 May 2002

Volume 80, Issue 21, pp. 3883-4065

Return to All Sections
back to top
RSS Feeds

Diffuse phase transition and relaxor behavior in (PbLa)TiO3 thin films

S. Bhaskar, S. B. Majumder, and R. S. Katiyar

Appl. Phys. Lett. 80, 3997 (2002); http://dx.doi.org/10.1063/1.1481981 (3 pages) | Cited 16 times

Online Publication Date: 20 May 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Room-temperature micro-Raman scattering and temperature-dependent dielectric measurements were carried out on sol-gel-derived ferroelectric Pb1−xLaxTi1−x/4O3 (PLT x = 0.05–0.30) thin films. Results indicate that the crystal structure and the electrical properties of PLT films were strongly influenced by the La contents. The dielectric properties of PLT thin films were studied in the temperature range of 80–700 K and frequencies in the range of 1 kHz–1 MHz. Results show that PLT thin films undergo normal-to-relaxor ferroelectric transformation with 30 at. % La contents. The observed relaxor behavior is established in terms of diffuse phase transition characteristics and Vögel–Fulcher relationship. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators

Effect of domain structure on thermal stability of nanoscale ferroelectric domains

Jungwon Woo, Seungbum Hong, Dong Ki Min, Hyunjung Shin, and Kwangsoo No

Appl. Phys. Lett. 80, 4000 (2002); http://dx.doi.org/10.1063/1.1481537 (3 pages) | Cited 12 times

Online Publication Date: 20 May 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We performed piezoelectric force microscopy (PFM) measurements on arrays of poled nanosize domains in 150 nm thick 〈111〉 preferentially oriented Pb(Zr0.4Ti0.6)O3 films grown by chemical solution deposition. Each domain of arrays was characterized by dot, egg, and ring structures depending on the pulse width ranging from 1 to 5 ms. The PFM measurements were followed by heat treatments at successively higher temperatures of 100 °C, 130 °C, and 160 °C for 30 min with rapid cooling down to room temperature before each measurement. The retention loss phenomena of the bits were characterized by measuring the number and dimension change of the remaining data bits. It was concluded that the ring-structured bit arrays, which represent fully penetrating domains through the film thickness, were the most stable form in terms of retention loss characteristics. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
85.50.Gk Non-volatile ferroelectric memories
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
68.60.Dv Thermal stability; thermal effects

Near-electrode model of transient currents in (Ba,Sr)TiO3 thin film capacitor structures

Yu. A. Boikov, B. M. Goltsman, V. K. Yarmarkin, and V. V. Lemanov

Appl. Phys. Lett. 80, 4003 (2002); http://dx.doi.org/10.1063/1.1482140 (3 pages) | Cited 6 times

Online Publication Date: 20 May 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Transient currents in SrRuO3//Ba0.8Sr0.2TiO3//SrRuO3 thin film capacitors, in the time interval 0.05–2.5 s after the step voltage switching on and off, have been investigated. The origin of these currents is proposed, including two components: charging (discharging) of near-electrode potential barriers and oxygen vacancy migration. It has been established that transient current of capacitor charging is mainly determined by the barrier component, and transient current of capacitor discharging is due to both components. The parameters of potential barriers were determined giving a good agreement of the calculated time dependences of transient currents with the experimental data. © 2002 American Institute of Physics.
Show PACS
84.32.Tt Capacitors
61.72.J- Point defects and defect clusters
66.30.H- Self-diffusion and ionic conduction in nonmetals

Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition

Ill Won Kim, Chang Won Ahn, Jin Soo Kim, Tae Kwon Song, Jong-Sung Bae, Byung Chun Choi, Jung-Hyun Jeong, and Jae Shin Lee

Appl. Phys. Lett. 80, 4006 (2002); http://dx.doi.org/10.1063/1.1482138 (3 pages) | Cited 37 times

Online Publication Date: 20 May 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Bi-excess SrBi2Ta2O9 (SBT) thin films on Pt/Ti/SiO2/Si substrate were prepared by pulsed laser deposition technique. The SBT structure was characterized by x-ray diffraction studies. The ferroelectric properties were confirmed by P–E hysteresis loops at different applied electric fields. The dielectric constant and the ac conductivity of the Pt/SBT/Pt capacitor were investigated in the frequency range from 0.01 Hz to 100 kHz and in the temperature range from 25 to 400 °C. The thermal activation energy of 0.90 eV is observed in the frequency dependent dielectric constant. The activation energy for conduction process is calculated as 0.91 eV from the slope of ac conductivity at the lowest frequency. The low-frequency dielectric relaxation and the ac conductivity of Bi-excess SBT thin film are discussed in relation to the electrical conduction of SBT/Pt junction. © 2002 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.Fg Pulsed laser ablation deposition
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
73.61.Ng Insulators
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close