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27 May 2002

Volume 80, Issue 21, pp. 3883-4065

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Square-lattice photonic band-gap single-cell laser operating in the lowest-order whispering gallery mode

Han-Youl Ryu, Se-Heon Kim, Hong-Gyu Park, Jeong-Ki Hwang, Yong-Hee Lee, and Jeong-Soo Kim

Appl. Phys. Lett. 80, 3883 (2002); http://dx.doi.org/10.1063/1.1480103 (3 pages) | Cited 73 times

Online Publication Date: 20 May 2002

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Square-lattice photonic band-gap lasers are realized at room temperature from single-cell photonic crystal slab microcavities fabricated in InGaAsP quantum-well materials emitting at 1.5 μm. This single-cell photonic band-gap laser operates in a class of two-dimensional mode to be classified as the smallest possible whispering gallery mode with genuine energy null at the center. The low-loss nondegenerate mode with modal volume of 0.1 (λ/2)3 demonstrates a spectrometer-limited below-threshold quality factor >2000 and a theoretical quality factor >10 000. The other class of photonic crystal lasers is also observed outside the photonic band gap of the square lattice, operating in the dipole mode. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.70.Qs Photonic bandgap materials
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Comparison of heat-affected zones due to nanosecond and femtosecond laser pulses using transmission electronic microscopy

R. Le Harzic, N. Huot, E. Audouard, C. Jonin, P. Laporte, S. Valette, A. Fraczkiewicz, and R. Fortunier

Appl. Phys. Lett. 80, 3886 (2002); http://dx.doi.org/10.1063/1.1481195 (3 pages) | Cited 61 times

Online Publication Date: 20 May 2002

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This letter presents a method aimed at quantifying the dimensions of the heat-affected zone (HAZ), produced during nanosecond and femtosecond laser–matter interactions. According to this method, 0.1 μm thick Al samples were microdrilled and observed by a transmission electronic microscopy technique. The holes were produced at laser fluences above the ablation threshold in both nanosecond and femtosecond regimes (i.e., 5 and 2 J/cm2, respectively). The grain size in the samples was observed near the microholes. The main conclusion is that a 40 μm wide HAZ is induced by the nanosecond pulses, whereas the femtosecond regime does not produce any observable HAZ. It turns out that the width of the femtosecond HAZ is less than 2 μm, which is our observation limit. © 2002 American Institute of Physics.
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42.62.-b Laser applications
68.37.Lp Transmission electron microscopy (TEM)
79.20.Ds Laser-beam impact phenomena
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
81.20.Wk Machining, milling
52.38.Mf Laser ablation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Bg Metals and alloys
81.65.-b Surface treatments
78.47.-p Spectroscopy of solid state dynamics
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Tunable and coherent nanosecond radiation in the range of 2.7–28.7 μm based on difference-frequency generation in gallium selenide

Wei Shi, Yujie J. Ding, Xiaodong Mu, and Nils Fernelius

Appl. Phys. Lett. 80, 3889 (2002); http://dx.doi.org/10.1063/1.1482144 (3 pages) | Cited 15 times

Online Publication Date: 20 May 2002

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Show Abstract
Continuously tunable and coherent radiation in the mid-IR range of 2.7–28.7 μm has been achieved in GaSe through type-I difference-frequency generation (DFG). The two mixing beams used for the DFG consist of the idler beam (0.73–1.8 μm) of an optical parametric oscillator pumped by the nanosecond Nd:YAG laser and the residual Nd:YAG fundamental beam (1.064 μm). The maximum peak output power for type-I DFG is measured to be 2.2 kW at the wavelength of 4 μm. Moreover, the type-II DFG with the kilowatt peak power and output wavelength continuously tunable in the range of 4.14–28 μm has also been achieved. © 2002 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
42.72.Ai Infrared sources

Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power

A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts

Appl. Phys. Lett. 80, 3892 (2002); http://dx.doi.org/10.1063/1.1482143 (3 pages) | Cited 84 times

Online Publication Date: 20 May 2002

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We report on femtosecond operation of a broadband diode-pumped external-cavity surface-emitting semiconductor laser, passively mode locked with a fast quantum–well Semiconductor Saturable Absorber Mirror grown at 735 °C. We obtained 477 fs pulses at 1.21 GHz. The average output power is 100 mW at 1040 nm, the pulse peak power 152 W, with ∼ 1 W of 830 nm pump. The rf spectrum shows a linewidth <50 kHz at the noise level (−65 dB). We believe that the group-delay dispersion is compensated by the negative self-phase modulation in the absorber structure, leading to soliton-like mode locking. This system requires no additional technological step after the growth of the structures. © 2002 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.65.Tg Optical solitons; nonlinear guided waves
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.79.Bh Lenses, prisms and mirrors
42.60.By Design of specific laser systems

Improving the thermal stability of organic light-emitting diodes by using a modified phthalocyanine layer

Tomohiko Mori, Takuya Mitsuoka, Masahiko Ishii, Hisayoshi Fujikawa, and Yasunori Taga

Appl. Phys. Lett. 80, 3895 (2002); http://dx.doi.org/10.1063/1.1481540 (3 pages) | Cited 28 times

Online Publication Date: 20 May 2002

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Remarkable improvement in thermal stability has been demonstrated in an organic light-emitting diode (OLED) using a metal-free phthalocyanine (H2Pc)-doped copper phthalocyanine (CuPc) layer as a hole injection layer. Compared to an OLED using a CuPc layer, approximately twice the lifetime has been achieved in the OLED using the H2Pc-doped CuPc layer at a high temperature of 85 °C, operating under a constant current and starting at a luminance of 400 cd/m2. Atomic force microscopy measurements show that the dopant of H2Pc depresses the crystallization of a CuPc layer. It is suggested that the improved thermal stability of the OLED is attributable to that of the phthalocyanine layer in morphology. © 2002 American Institute of Physics.
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85.60.Jb Light-emitting devices
68.60.Dv Thermal stability; thermal effects
78.66.Qn Polymers; organic compounds
68.55.-a Thin film structure and morphology

Characterization of rapid-thermal-annealed InAs/In0.15Ga0.85As dots-in-well heterostructure using double crystal x-ray diffraction and photoluminescence

S. Krishna, S. Raghavan, A. L. Gray, A. Stintz, and K. J. Malloy

Appl. Phys. Lett. 80, 3898 (2002); http://dx.doi.org/10.1063/1.1482421 (3 pages) | Cited 17 times

Online Publication Date: 20 May 2002

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The effect of rapid thermal annealing on a 10-layer InAs/In0.15Ga0.85As dots-in-a-well (DWELL) heterostructure was studied using double crystal x-ray diffraction (DCXRD) and photoluminescence (PL). From the x-ray rocking curves obtained for symmetric (004) and asymmetric (224) scans, the change in the in-plane and out-of-plane lattice constant and average composition in the DWELL structure were calculated. Thermally induced strain relaxation, which leads to an enhanced In/Ga interdiffusion preferentially along the growth direction, is believed to be the main mechanism for the changes in the structural and optical properties of the sample. Excellent correlation was observed between the PL and the DCXRD measurements. © 2002 American Institute of Physics.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.65.Fg Quantum wells
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
78.67.De Quantum wells
61.72.Cc Kinetics of defect formation and annealing
68.35.Fx Diffusion; interface formation

Single-fundamental-mode photonic-crystal vertical-cavity surface-emitting lasers

Dae-Sung Song, Se-Heon Kim, Hong-Gyu Park, Chang-Kyu Kim, and Yong-Hee Lee

Appl. Phys. Lett. 80, 3901 (2002); http://dx.doi.org/10.1063/1.1481984 (3 pages) | Cited 94 times

Online Publication Date: 20 May 2002

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A photonic-crystal vertical-cavity surface-emitting laser (PC-VCSEL) is proposed and demonstrated. The 850-nm-PC-VCSEL shows single-mode continuous-wave operation in the entire current range. The side-mode suppression ratio is 35–40 dB for the sample with the hole pitch (Λ) 5 μm and the hole diameter (a) 3.5 μm. The guiding effect of the single-defect triangular-lattice two-dimensional photonic crystal structure is experimentally observed and is explained by the effective index model. © 2002 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.70.Qs Photonic bandgap materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.50.-p Quantum optics
42.55.Ah General laser theory
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.60.Pk Continuous operation
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