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3 Jun 2002

Volume 80, Issue 22, pp. 4085-4270

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Enhanced electroluminescence using polystyrene as a matrix

Gufeng He, Yongfang Li, Jie Liu, and Yang Yang

Appl. Phys. Lett. 80, 4247 (2002); http://dx.doi.org/10.1063/1.1480098 (3 pages) | Cited 33 times

Online Publication Date: 23 May 2002

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Poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH–PPV) blends with polystyrene (PS) were used as emitting layers in polymer light-emitting diodes. Studies of photoluminescence and electroluminescence (EL) of the blends indicate that interchain interactions were tremendously suppressed due to the dilution effect. The device of MEH–PPV/PS (50/50) shows much higher EL efficiency compared to pure MEH–PPV devices. Since there is neither energy transfer nor charge transfer involved in MEH–PPV/PS blends, the observed efficiency enhancement is mainly attributed to the suppressed interchain species, which are responsible for the low photoluminescence yields. In addition, the addition of PS into MEH–PPV improves the thermal stability of polymer thin films and reduces the sensitivity of device performance to processing conditions. © 2002 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics
78.55.Kz Solid organic materials
68.60.Dv Thermal stability; thermal effects

Single-photon detector in the microwave range

O. Astafiev, S. Komiyama, T. Kutsuwa, V. Antonov, Y. Kawaguchi, and K. Hirakawa

Appl. Phys. Lett. 80, 4250 (2002); http://dx.doi.org/10.1063/1.1482787 (3 pages) | Cited 37 times

Online Publication Date: 23 May 2002

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Single-photon counting at microwave frequencies around 500 GHz is demonstrated by using a single-electron transistor (SET) formed by two capacitively coupled GaAs/AlxGa1−xAs parallel quantum dots (QDs). A point contact separating the double QDs allows the prompt escape of an excited electron from one of the QDs to another. The resulting long-lived photoinduced ionization of the QD is detected as a change in the SET current. © 2002 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
78.67.Hc Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.63.Rt Nanoscale contacts

Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation

Reinhold Schörner, Peter Friedrichs, Dethard Peters, Dietrich Stephani, Sima Dimitrijev, and Philippe Jamet

Appl. Phys. Lett. 80, 4253 (2002); http://dx.doi.org/10.1063/1.1483125 (3 pages) | Cited 18 times

Online Publication Date: 23 May 2002

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This work presents improved channel mobility of n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on 4H–SiC, achieved by gate-oxide nitridation in nitric oxide. Lateral enhancement mode MOSFETs were fabricated using standard polycrystalline silicon gate process and 900 °C annealing for the source and drain contacts. The low field mobility of these MOSFETs was as high as 48 cm2/Vs together with a threshold voltage of 0.6 V, while the interface state density—determined from the subthreshold slope—was about 3×1011 eV−1 cm−2. The 43-nm-thick gate oxide of coprocessed metal–oxide–semiconductor structures exhibited a breakdown field strength of 9 MV/cm. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices
81.65.Rv Passivation
73.20.At Surface states, band structure, electron density of states
73.50.Dn Low-field transport and mobility; piezoresistance
61.72.Cc Kinetics of defect formation and annealing
81.05.Hd Other semiconductors

Effects of nonuniformity in thin-film photovoltaics

V. G. Karpov, A. D. Compaan, and Diana Shvydka

Appl. Phys. Lett. 80, 4256 (2002); http://dx.doi.org/10.1063/1.1483118 (3 pages) | Cited 24 times

Online Publication Date: 23 May 2002

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We discuss the physical origin and effects of micrononuniformities on thin-film photovoltaics. The key factors are the large device area and the presence of potential barriers in the grain boundaries (for polycrystalline films) and in device junctions. We model the nonuniformity effects in the terms of random microdiodes connected in parallel through a resistive electrode. The microdiodes of low open circuit voltages are shown to affect macroscopically large regions. They strongly reduce the device performance and induce its nonuniform degradation in several different modes. We support our predictions by experiments, which show that the device degradation is driven by the light-induced forward bias and is spatially nonuniform. © 2002 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices
61.72.Mm Grain and twin boundaries
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
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