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3 Jun 2002

Volume 80, Issue 22, pp. 4085-4270

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Dielectric and piezoelectric enhancement due to 90° domain rotation in the tetragonal phase of Pb(Mg1/3Nb2/3)O3-PbTiO3

T. Y. Koo and S-W. Cheong

Appl. Phys. Lett. 80, 4205 (2002); http://dx.doi.org/10.1063/1.1483120 (3 pages) | Cited 26 times

Online Publication Date: 23 May 2002

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The anomalous enhancement in dielectric (ϵ>6000) and piezoelectric constant (d33>600 pC/N) in the tetragonal side (x = 35%) of morphotropic phase boundary (MPB) has been observed in polycrystalline (1−x)Pg(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT). On the other hand, x-ray peak position shifts under electric field (E) demonstrate that the intrinsic piezoelectric response becomes maximum at MPB (x = 33%–34%), which may be associated with the recently discovered monoclinic phase. Intensity change of Bragg peaks under E indicates that 90° domain rotation is the main contribution to additional strain in the tetragonal side of MPB, which dominates the intrinsic contribution of monoclinic phase in polycrystalline PMN-PT. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point

Anomalous isothermal charging and discharging currents in polytetrafluoroethylene

Eugen R. Neagu and Jose N. Marat-Mendes

Appl. Phys. Lett. 80, 4208 (2002); http://dx.doi.org/10.1063/1.1483928 (3 pages) | Cited 3 times

Online Publication Date: 23 May 2002

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Transient charging and discharging currents in polytetrafluoroethylene have been investigated at various temperatures and field strengths in a vacuum. Anomalous charging and discharging currents have been identified. At low electric fields, the anomalous discharging current is almost the mirror image of the anomalous charging current. Three characteristic zones have been identified that can provide information about dielectric polarization, bulk conduction, electrode effects, and diffusion. The mobility at 140 °C and 16 MV m−1 was determined to be 5.4×10−16 m2 V−1 s−1. © 2002 American Institute of Physics.
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77.22.Ej Polarization and depolarization
77.84.Jd Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)

Nonlinear macroscopic polarization in GaN/AlxGa1−xN quantum wells

G. Vaschenko, D. Patel, C. S. Menoni, H. M. Ng, and A. Y. Cho

Appl. Phys. Lett. 80, 4211 (2002); http://dx.doi.org/10.1063/1.1483906 (3 pages) | Cited 12 times

Online Publication Date: 23 May 2002

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We present experimental evidence of the nonlinear behavior of the macroscopic polarization in GaN/AlxGa1−xN quantum wells. This behavior is revealed by determining the barrier-well polarization difference as a function of applied hydrostatic pressure. The polarization difference and corresponding built-in electric field in the wells increase with applied pressure at a much higher rate than expected from the linear model of polarization. This result, universally observed in the quantum well structures with different AlN mole fraction in the barriers, is explained by the nonlinear dependence of the piezoelectric polarization in GaN and AlN on the strain generated by pressure. © 2002 American Institute of Physics.
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77.22.Ej Polarization and depolarization
77.65.Ly Strain-induced piezoelectric fields
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.07.St Quantum wells
62.50.-p High-pressure effects in solids and liquids
73.61.Ey III-V semiconductors

Effect of annealing on dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition

Tomohiko Sugiyama, Tomoyoshi Tai, and Takashi Sugino

Appl. Phys. Lett. 80, 4214 (2002); http://dx.doi.org/10.1063/1.1482788 (3 pages) | Cited 12 times

Online Publication Date: 23 May 2002

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Polycrystalline boron carbon nitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition. The dielectric constant is estimated from the accumulation region of capacitance–voltage characteristics of Cu/BCN/p-Si samples. It is found that the dielectric constant of the BCN film is reduced by annealing at 400 °C. The BCN film before and after annealing is characterized by Fourier transform infrared absorption measurements. The infrared absorption intensities due to the C�H and C�C bonds decrease after annealing. It is suggested that the C�H and C�C bonds are undesirable to obtain a low dielectric constant. A dielectric constant as low as 2.1 is achieved for the BCN film which is treated by annealing process. © 2002 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
61.72.Cc Kinetics of defect formation and annealing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics

Importance of structural irregularity on dielectric loss in (1−x)Pb(Mg1/3Nb2/3)O3−(x)PbTiO3 crystals

Shashank Priya, D. Viehland, and K. Uchino

Appl. Phys. Lett. 80, 4217 (2002); http://dx.doi.org/10.1063/1.1482791 (3 pages) | Cited 19 times

Online Publication Date: 23 May 2002

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The dielectric properties of (1−x)Pb(Mg1/3Nb2/3)O3−(x)PbTiO3 (PMN–PT) crystals have been investigated over a temperature range of 4 to 450 K at various frequencies. At low temperatures, an unusual frequency dependent plateau region in the absorption was observed between 75 and 175 K. At both higher and lower temperatures, the absorption was frequency independent. Analysis of the relaxation time constant revealed power-law divergence, typical of fractal behavior in disordered magnetic systems. The results demonstrate the importance of structural irregularities on the dielectric loss mechanism in poled oriented PMN–PT crystals. © 2002 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
61.66.Fn Inorganic compounds
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