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3 Jun 2002

Volume 80, Issue 22, pp. 4085-4270

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First-principles calculation of the piezoelectric tensor math of III–V nitrides

Fabio Bernardini and Vincenzo Fiorentini

Appl. Phys. Lett. 80, 4145 (2002); http://dx.doi.org/10.1063/1.1482796 (3 pages) | Cited 43 times

Online Publication Date: 23 May 2002

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We report direct first-principles density-functional calculations of the piezoelectric tensor math relating polarization to applied stress for the binary compounds AlN, GaN, and InN. The values of math are rather sensitive to the choice of the exchange-correlation functional, and results are presented for both the local-density and gradient approximations. A comparison with experiment and with values predicted indirectly from the elastic math and piezoconstant math tensors is also presented. © 2002 American Institute of Physics.
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77.65.Ly Strain-induced piezoelectric fields
81.05.Ea III-V semiconductors
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing

E. Tournié, M.-A. Pinault, and A. Guzmán

Appl. Phys. Lett. 80, 4148 (2002); http://dx.doi.org/10.1063/1.1481978 (3 pages) | Cited 51 times

Online Publication Date: 23 May 2002

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We have investigated by photoluminescence spectroscopy and x-ray diffraction the influence of ex situ postgrowth annealing on the properties of a series of dedicated Ga(In)(N)As ternary and quaternary quantum wells (QWs) confined by various barrier layers. We show that the low growth temperature and not N per se, is largely responsible for the low radiative efficiency of Ga(In)NAs QWs. Furthermore, postgrowth annealing induces a blueshift of the photoluminescence line in the case of quaternary GaInNAs QWs only, while x-ray diffraction reveals the absence of compositional change. We conclude with the occurrence of a local reorganization of the N-bonding configuration within the GaInNAs quaternary material during annealing. © 2002 American Institute of Physics.
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78.67.De Quantum wells
78.55.Cr III-V semiconductors
68.65.Fg Quantum wells
61.72.Cc Kinetics of defect formation and annealing
81.07.St Quantum wells

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

D. Vignaud, J. F. Lampin, E. Lefebvre, M. Zaknoune, and F. Mollot

Appl. Phys. Lett. 80, 4151 (2002); http://dx.doi.org/10.1063/1.1483126 (3 pages) | Cited 7 times

Online Publication Date: 23 May 2002

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The electron lifetime has been studied by a pump–probe optical transmission technique in heavily Be-doped InGaAs lattice matched to InP as a function of the growth temperature (350 ⩽ Tg ⩽ 500 °C) and doping (2×1019 ⩽ [Be] ⩽ 2.6×1020 cm−3). Reduction of the growth temperature to 350–400 °C induces the creation of electron recombining centers, efficient at the lowest doping studied here. But, for higher dopings, these defects have negligible effects compared to intrinsic Auger processes: the high diffusion of Be can thus be limited by growing heterostructures at reduced temperatures without compromising the electron lifetime. Subpicosecond electron lifetimes have been measured at the highest doping. © 2002 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
66.30.J- Diffusion of impurities

Electron field emission from excimer laser crystallized amorphous silicon

Y. F. Tang, S. R. P. Silva, B. O. Boskovic, J. M. Shannon, and M. J. Rose

Appl. Phys. Lett. 80, 4154 (2002); http://dx.doi.org/10.1063/1.1482141 (3 pages) | Cited 9 times

Online Publication Date: 23 May 2002

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We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 10−5 A (current densities ≈ 0.04 A/cm2) at threshold fields less than 15 V/μm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged. © 2002 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Crossover from in-plane to perpendicular anisotropy in Pt/CoFe/AlOx sandwiches as a function of Al oxidation: A very accurate control of the oxidation of tunnel barriers

S. Monso, B. Rodmacq, S. Auffret, G. Casali, F. Fettar, B. Gilles, B. Dieny, and P. Boyer

Appl. Phys. Lett. 80, 4157 (2002); http://dx.doi.org/10.1063/1.1483122 (3 pages) | Cited 23 times

Online Publication Date: 23 May 2002

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By measuring the extraordinary Hall effect on a series of naturally oxidized Pt3 nm/Co90Fe10 0.6 nm/Al tAl samples with 0<tAl<1.2 nm, a first crossover from in-plane to perpendicular magnetic anisotropy is observed when tAl is varied from 0 to 0.2 nm. The CoFe magnetization remains out of plane for 0.2<tAl<0.5 nm. When the Al thickness is further increased, a second crossover back to in plane takes place. In a series of samples in which the Al thickness is kept constant, the same behavior is observed as the time of exposure to an oxygen plasma is varied. The results clearly indicate that the degree of oxidation of Al at the CoFe/AlOx interface has a dramatic effect on the magnetic anisotropy of the transition-metal layer. These sharp crossovers of anisotropy provide a very accurate and convenient way to monitor the oxidation of the tunnel barrier in magnetic tunnel junctions. This technique is also applied to characterize the oxidation kinetics of various ultrathin metallic layers as well as the aging effect in alumina barriers. © 2002 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Bb Fe and its alloys
75.30.Gw Magnetic anisotropy
81.65.Mq Oxidation
75.45.+j Macroscopic quantum phenomena in magnetic systems
72.15.Gd Galvanomagnetic and other magnetotransport effects

Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility

F. Gámiz, J. B. Roldán, and A. Godoy

Appl. Phys. Lett. 80, 4160 (2002); http://dx.doi.org/10.1063/1.1483907 (3 pages) | Cited 1 time

Online Publication Date: 23 May 2002

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We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed (as experimentally observed). However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi, due to an increase of the phonon scattering, which partially counteracts the increase in the mobility achieved by the strain. This effect is less important as the germanium mole fraction, x, is reduced, and as the value of TSi increases. © 2002 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Effects of amorphizing species’ ion mass on the end-of-range damage formation in silicon

Mark H. Clark, Kevin S. Jones, Tony E. Haynes, Charles J. Barbour, Kenneth G. Minor, and Ebrahim Andideh

Appl. Phys. Lett. 80, 4163 (2002); http://dx.doi.org/10.1063/1.1483383 (3 pages) | Cited 8 times

Online Publication Date: 23 May 2002

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The effects of preamorphizing ion mass on the end-of-range (EOR) damage and subsequent enhanced diffusivity have been investigated. Amorphizing silicon with implants of 22 keV 28Si+, 32 keV 73Ge+, 40 keV 119Sn+, and 45 keV 207Pb+ provided the mass comparisons. Cross-sectional transmission electron microscopy analysis showed that the amorphous layer depths were approximately 400 Å. After postimplantation annealing at 750 °C for 30 min, plan-view transmission electron microscopy (PTEM) revealed that increasing the ion mass decreased the defect size and density. Quantitative analysis of PTEM results also showed that increasing ion mass decreased the population of interstitials trapped in the EOR. Secondary ion mass spectrometry depth profiles of grown-in boron marker layers showed that increasing the ion mass decreased the time average diffusivity enhancements of boron (〈DB〉/DB∗). © 2002 American Institute of Physics.
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61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing

Piezoresponse force microscopy for polarity imaging of GaN

B. J. Rodriguez, A. Gruverman, A. I. Kingon, R. J. Nemanich, and O. Ambacher

Appl. Phys. Lett. 80, 4166 (2002); http://dx.doi.org/10.1063/1.1483117 (3 pages) | Cited 44 times

Online Publication Date: 23 May 2002

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The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution. © 2002 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ej Polarization and depolarization
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.55.-g Dielectric thin films

Electron conduction through quasi-one-dimensional indium wires on silicon

Takashi Uchihashi and Urs Ramsperger

Appl. Phys. Lett. 80, 4169 (2002); http://dx.doi.org/10.1063/1.1483929 (3 pages) | Cited 40 times

Online Publication Date: 23 May 2002

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Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4×1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a conductance per square as high as 100 μS, with global conduction despite numerous surface steps. A complete growth of indium wires up to both the surface steps and the lithographically printed electrodes is essential for the macroscopic transport. The system exhibits a metal–insulator transition at 130 K, consistent with a recent ultraviolet photoemission study [H. W. Yeom, S. Takeda, E. Rotenberg, I. Matsuda, K. Horikoshi, J. Schaefer, C. M. Lee, S. D. Kevan, T. Ohta, T. Nagao, and S. Hasegawa, Phys. Rev. Lett. 82, 4898 (1999)]. © 2002 American Institute of Physics.
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73.63.Nm Quantum wires
81.07.Vb Quantum wires
73.40.Ns Metal-nonmetal contacts
71.30.+h Metal-insulator transitions and other electronic transitions
68.65.La Quantum wires (patterned in quantum wells)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.25.+i Surface conductivity and carrier phenomena
72.60.+g Mixed conductivity and conductivity transitions

Fast time response from Si–SiGe undulating layer superlattices

D. Buca, S. Winnerl, S. Lenk, Ch. Buchal, and D.-X. Xu

Appl. Phys. Lett. 80, 4172 (2002); http://dx.doi.org/10.1063/1.1483121 (3 pages) | Cited 9 times

Online Publication Date: 23 May 2002

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We have grown Si–Si1−xGex undulating layer superlattices with x = 0.39 and 0.45 by molecular-beam epitaxy on top of epitaxial implanted CoSi2 layers and fabricated vertical metal–semiconductor–metal detectors. The detectors show a quantum efficiency of 5% for the wavelength of 1320 nm and 0.9% for 1550 nm. We performed temporal response measurements, using a Ti:sapphire laser and an optical parametric oscillator which generates ultrafast pulses at infrared wavelengths. An electrical response time of 16 ps full width at half maximum was obtained at a wavelength of 1300 nm. © 2002 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
73.40.Sx Metal-semiconductor-metal structures
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.De Semiconductor-device characterization, design, and modeling

Effects of postmetallization annealing on ultrathin SiO2 layer properties

Asuha, Toshiro Yuasa, Osamu Maida, and Hikaru Kobayashi

Appl. Phys. Lett. 80, 4175 (2002); http://dx.doi.org/10.1063/1.1482147 (3 pages) | Cited 14 times

Online Publication Date: 23 May 2002

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Observation of both longitudinal optical and transverse optical phonons of ∼1.3 nm ultrathin silicon dioxide (SiO2) layers formed by immersion in nitric acid shows that the SiO2 density increases by 16% after postoxidation annealing (POA) at 900 °C. For the SiO2 layers without POA, postmetalization annealing (PMA) greatly decreases the SiO2 thickness from 1.3 to 0.2 nm, the effect of which is attributable to the reaction of aluminum with SiO2 to form a metallic mixture of aluminum oxide and Si. For SiO2 layers with POA, PMA decreases the SiO2 thickness to a lesser extent (from 1.4 to 0.9 nm), because of the suppression of aluminum diffusion into SiO2 due to its dense structure. PMA is found to decrease the interface state density but increase the leakage current density. © 2002 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
85.40.Ls Metallization, contacts, interconnects; device isolation
63.20.-e Phonons in crystal lattices
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Ns Metal-nonmetal contacts
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