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3 Jun 2002

Volume 80, Issue 22, pp. 4085-4270

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Absolute emission current density of O− from 12CaO⋅7Al2O3 crystal

Q. X. Li, K. Hayashi, M. Nishioka, H. Kashiwagi, M. Hirano, Y. Torimoto, H. Hosono, and M. Sadakata

Appl. Phys. Lett. 80, 4259 (2002); http://dx.doi.org/10.1063/1.1476958 (3 pages) | Cited 39 times

Online Publication Date: 23 May 2002

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Strong and high purity O− negative ion emission has been observed from a synthesized crystal 12CaO⋅7Al2O3 surface. A μA/cm2-level O− emission from this material has been achieved at the surface temperature of 800 °C and the extraction field over 1000 V/cm, which is about three orders of magnitude higher than the current density emitted from the Y2O3-stabilized ZrO2 electrolyte surface. The strong emissivity of this material, as well as easy and economical fabrication, may provide a useful tool to generate the O− negative ion, which is expected to be one of the most important radicals for chemical syntheses and material modifications. © 2002 American Institute of Physics.
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79.40.+z Thermionic emission
07.77.Ka Charged-particle beam sources and detectors

Quasistationary states of a relativistic field-emission-limited diode employing a high-transparency mesh anode

Ming-Chieh Lin and Der-San Chuu

Appl. Phys. Lett. 80, 4262 (2002); http://dx.doi.org/10.1063/1.1482789 (3 pages) | Cited 11 times

Online Publication Date: 23 May 2002

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A relativistic field-emission-limited diode employing a high-transparency mesh anode is investigated via a self-consistent approach. The field emission process is described quantum mechanically by the Fowler–Nordheim equation. The cathode plasma and surface properties are considered within the framework of the effective work function approximation. Space-charge effects are described by Poisson’s equation including relativistic effects. Ionization effects at the high-transparency mesh anode are ignored. The numerical calculations are carried out on a time scale much shorter than the emergence of the gap closure. The quasistationary state of the diode exhibits a cutoff voltage. The electric field on the cathode surface is found to be saturated in the high-voltage regime and determined by the effective work function only. © 2002 American Institute of Physics.
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85.45.Bz Vacuum microelectronic device characterization, design, and modeling
79.70.+q Field emission, ionization, evaporation, and desorption
52.59.Mv High-voltage diodes
52.27.Ny Relativistic plasmas
52.65.-y Plasma simulation

Optimization of resonant two-photon absorption with adaptive quantum control

Taro Ando, Tsuneyuki Urakami, Haruyasu Itoh, and Yutaka Tsuchiya

Appl. Phys. Lett. 80, 4265 (2002); http://dx.doi.org/10.1063/1.1481188 (3 pages) | Cited 12 times

Online Publication Date: 23 May 2002

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Adaptive quantum control is applied to the resonant two-photon absorption of Rb atoms, which includes an intermediate state between the initial and final states. The phase distribution of incident laser pulses in the frequency domain is decided adaptively free from a priori knowledge on the phase distribution with the help of a simulated annealing algorithm to achieve the maximum luminescence intensity from the state associated with the excited state. The optimized phase pattern acquired in our system matches a theoretical prediction based on the perturbative treatment of the semiclassical model on the absorption of light. © 2002 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Qk Coherent control of atomic interactions with photons
32.80.Wr Other multiphoton processes
02.60.Pn Numerical optimization
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
32.50.+d Fluorescence, phosphorescence (including quenching)
32.70.Fw Absolute and relative intensities
42.79.Hp Optical processors, correlators, and modulators

Calorimetric studies of the A1 to L10 transformation in FePt and CoPt thin films

K. Barmak, J. Kim, S. Shell, E. B. Svedberg, and J. K. Howard

Appl. Phys. Lett. 80, 4268 (2002); http://dx.doi.org/10.1063/1.1483924 (3 pages) | Cited 55 times

Online Publication Date: 23 May 2002

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Using differential scanning calorimetry, the enthalpy (activation energy) for the A1 to L10 transformation in FePt and CoPt thin films have been measured as −10.2±2.1 kJ/g -atom (1.7±0.1 eV) and −3.1±0.2 kJ/g-atom (2.8±0.2 eV), respectively. FePt is further seen to transform at temperatures that are approximately 120 °C lower than those for CoPt. The enthalpy of grain growth that accompanies the transformation is shown to be negligibly small by comparison to the transformation enthalpy in both films. The impact of our findings on alloy development for ultrahigh density magnetic storage media is discussed. © 2002 American Institute of Physics.
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68.55.Nq Composition and phase identification
64.70.K- Solid-solid transitions
82.60.Fa Heat capacities and heats of phase transitions
75.50.Ss Magnetic recording materials
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