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3 Jun 2002

Volume 80, Issue 22, pp. 4085-4270

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Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers

M. Rattunde, C. Mermelstein, J. Schmitz, R. Kiefer, W. Pletschen, M. Walther, and J. Wagner

Appl. Phys. Lett. 80, 4085 (2002); http://dx.doi.org/10.1063/1.1481979 (3 pages) | Cited 15 times

Online Publication Date: 23 May 2002

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Strained triple-quantum-well, large-optical-cavity GaInSb/AlGaAsSb/GaSb diode lasers emitting at 1.98 μm at 300 K are investigated with regard to their high-power capability. As the heating of the active region is a limiting factor for these devices, a quantitative model is derived to simulate the performance of these lasers including thermal effects. The standard laser parameters, deduced from measurements on ridge waveguide lasers, and the measured thermal resistance of the mounted devices were then taken as input parameters. The output power and power efficiency of the lasers calculated using the presented model. Good agreement was found between calculated data and the measurements for different heatsink temperatures as well as for different laser geometries and mounting techniques. The maximum output power achieved for p-side down mounted 1000×150 μm2 broad-area laser was 1.7 W at 300 K in cw operation. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Influence of the orientation of liquid crystalline poly(9,9-dioctylfluorene) on its lasing properties in a planar microcavity

T. Virgili, D. G. Lidzey, M. Grell, D. D. C. Bradley, S. Stagira, M. Zavelani-Rossi, and S. De Silvestri

Appl. Phys. Lett. 80, 4088 (2002); http://dx.doi.org/10.1063/1.1481977 (3 pages) | Cited 18 times

Online Publication Date: 23 May 2002

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We present a study of optically pumped laser emission from a microcavity containing an oriented layer of the liquid crystalline conjugated polymer poly(9,9-dioctylfluorene). The birefringence of the oriented polymer results in the definition of two cavity modes with electric vectors polarized perpendicular and parallel to the alignment direction. At high excitation density, the emission intensity from the cavity mode polarized parallel to the orientation direction increases rapidly compared to the orthogonal polarized mode and its linewidth narrows from 8 to 2 nm. We identify the parallel-polarized emission as laser action with a threshold excitation density of 7.8×1019 cm−3. © 2002 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Jk Polymers and organics
42.70.Df Liquid crystals
61.30.Vx Polymer liquid crystals
78.45.+h Stimulated emission
78.20.Fm Birefringence

High-power (λ ∼ 9 μm) quantum cascade lasers

S. Slivken, Z. Huang, A. Evans, and M. Razeghi

Appl. Phys. Lett. 80, 4091 (2002); http://dx.doi.org/10.1063/1.1482782 (3 pages) | Cited 20 times

Online Publication Date: 23 May 2002

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High-power quantum cascade lasers emitting at λ>9 μm are demonstrated. Accurate control of layer thickness and interfaces is evidenced by x-ray diffraction. Excellent peak power for uncoated lasers, up to 3.5 W per facet for a 25 μm emitter width, is obtained at 300 K for 75 period structures. The threshold current density at 300 K is only 1.4 kA/cm2. From 300 to 425 K, the laser exhibits a characteristic temperature, T0, of 167 K. Over 150 mW of average power is measured per facet for a duty cycle of 6%. Simulation of the average power output reveals a thermal resistance of 12 K/W for epilayer-up mounted ridges. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
68.65.Fg Quantum wells

Room-temperature operation of electrically pumped quantum-cascade microcylinder lasers

S. Anders, W. Schrenk, E. Gornik, and G. Strasser

Appl. Phys. Lett. 80, 4094 (2002); http://dx.doi.org/10.1063/1.1484246 (3 pages) | Cited 7 times

Online Publication Date: 23 May 2002

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We present the lasing properties of microcylinder lasers that were processed into a quantum-cascade heterostructure. At room temperature, the GaAs/Al0.45Ga0.55As superlattice structure lases at 12.55 μm. Low mirror losses, an inherent advantage of microcylinder lasers, result in a low threshold current density of 2.2 kA/cm2 at 78 K. The microcylinder lasers compare favorably to both Fabry–Pérot and distributed feedback cavities that were processed from the same material. The maximum operating temperature of the microcylinders, 54 °C, exceeds the previously reported maximum operating temperature, −3 °C, for an InP-based microlaser. © 2002 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.55.Px Semiconductor lasers; laser diodes
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Electro-optic characteristics of de Vries tilted smectic liquid crystals: Analog behavior in the smectic A∗ and smectic C∗ phases

N. A. Clark, T. Bellini, R.-F. Shao, D. Coleman, S. Bardon, D. R. Link, J. E. Maclennan, X.-H. Chen, M. D. Wand, D. M. Walba, P. Rudquist, and S. T. Lagerwall

Appl. Phys. Lett. 80, 4097 (2002); http://dx.doi.org/10.1063/1.1480472 (3 pages) | Cited 49 times

Online Publication Date: 23 May 2002

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Chiral smectic A liquid crystal materials of the de Vries type (with molecules tilted relative to the layer normal) exhibit analog field-induced (electroclinic) optic axis rotation accompanied by an increase in birefringence. We identify two such de Vries smectic A∗ materials and use them to develop and test models for these characteristic electro-optic effects. These materials also exhibit colossal analog field-induced optic axis rotation in the lower temperature smectic C∗ phase, a consequence of polarization charge stabilization, and of polarization screening of the applied field in the liquid crystal. © 2002 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Fm Birefringence
78.20.Jq Electro-optical effects

Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes

J. C. Jackson, P. K. Hurley, B. Lane, A. Mathewson, and A. P. Morrison

Appl. Phys. Lett. 80, 4100 (2002); http://dx.doi.org/10.1063/1.1483119 (3 pages) | Cited 6 times

Online Publication Date: 23 May 2002

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This letter presents an experimental study of dark count rates and leakage current in Geiger-mode avalanche photodiodes (GM APD). Experimental results from circular diodes over a range of areas (20–500 μm diam), exhibit leakage current levels orders of magnitude higher than anticipated from dark count rates. Measurements of the area and peripheral components of the leakage current indicate that the majority of the current in reverse bias does not enter the high-field region of the diode, and therefore, does not contribute to the dark count rate. Extraction of the area leakage current term from large-area devices (500 μm) corresponds well with the measured dark count rates on smaller devices (20 μm). Finally, the work indicates how dark count measurements represent 10−18 A levels of leakage current detection in GM APDs. © 2002 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects

Mid-infrared (λ≈7.4 μm) quantum cascade laser amplifier for high power single-mode emission and improved beam quality

Mariano Troccoli, Claire Gmachl, Federico Capasso, Deborah L. Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 80, 4103 (2002); http://dx.doi.org/10.1063/1.1479453 (3 pages) | Cited 22 times

Online Publication Date: 23 May 2002

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A quantum cascade laser amplifier has been developed. It was used to obtain high power single-mode emission at λ ≈ 7.4 μm from a quantum cascade distributed feedback laser, together with enhanced beam quality. Laser and amplifier are directly coupled in a master oscillator power amplifier configuration. Peak optical powers of 0.5 W at 80 K have been obtained. Ninety percent of the total power is thereby emitted within a divergence of 20° in the lateral direction. The device showed single mode operation with a side mode suppression ratio of 30 dB in the temperature range from 10 to 280 K. This allowed tuning of the emission wavelength in the range from 7.36 to 7.46 μm. The estimated peak amplifier gain is 6.4 and 4.9 dB at 80 and 300 K, respectively, and the cavity losses are 12.5 and 22 cm−1 at the corresponding temperatures. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Subwavelength patterns and high detection efficiency in fluorescence correlation spectroscopy using photonic structures

P.-F. Lenne, E. Etienne, and H. Rigneault

Appl. Phys. Lett. 80, 4106 (2002); http://dx.doi.org/10.1063/1.1483116 (3 pages) | Cited 8 times

Online Publication Date: 23 May 2002

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We present theoretical and experimental evidence of subwavelength resolution and high detection efficiency in fluorescence correlation spectroscopy (FCS) using photonic structures. We show that multilayered dielectric mirrors or metallic mirrors may be used in a conventional FCS setup to improve fluorescence detection and fluctuation analysis. © 2002 American Institute of Physics.
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07.60.-j Optical instruments and equipment
42.79.Wc Optical coatings
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.55.-m Photoluminescence, properties and materials
42.79.Bh Lenses, prisms and mirrors
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