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Applied Physics Letters / Volume 80 / Issue 23 / INTERDISCIPLINARY AND GENERAL PHYSICS

Appl. Phys. Lett. 80, 4458 (2002); doi:10.1063/1.1479456 (3 pages)

Use of near-surface channel conductance and differential capacitance versus potential measurements to correlate inversion layer formation with low effective surface recombination velocities at n-Si/liquid contacts

David J. Michalak and Nathan S. Lewis

Division of Chemistry and Chemical Engineering, 127-72 California Institute of Technology, Pasadena, California 91125

(Received 20 December 2001; accepted 20 March 2002)

Near-surface channel conductance measurements, differential capacitance versus potential measurements, and surface recombination velocity measurements have been performed on (111)- and (100)-oriented n-type Si samples in contact with nitrogen and/or liquid electrolyte solutions containing I2, I2/I−, ferrocene+/0, or decamethylferrocene+/0 in either methanol or tetrahydrofuran. Si/liquid contacts that displayed a low effective surface recombination velocity S corresponded to those that formed an inversion layer at the solid/liquid contact as indicated by channel conductance measurements or by differential capacitance versus potential measurements. Contacts that did not produce an inversion layer at the Si surface did not produce low effective S values. The observed behavior is consistent with the known energetics of Si/liquid contacts and provides an explanation for the low effective S values observed in these systems. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

silicon, elemental semiconductors, semiconductor-electrolyte boundaries, surface conductivity, capacitance, inversion layers, surface recombination, organic compounds

PACS

  • 73.40.Mr

    Semiconductor-electrolyte contacts

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

  • 73.25.+i

    Surface conductivity and carrier phenomena

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.1479456

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    W. J. Royea, D. J. Michalak, and N. S. Lewis, Appl. Phys. Lett. 77, 2566 (2000)APPLAB000077000016002566000001.

    A. G. Aberle, S. Glunz, and W. Warta, J. Appl. Phys. 71, 4422 (1992)JAPIAU000071000009004422000001.

    W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).

    W. J. Royea, A. Juang, and N. S. Lewis, Appl. Phys. Lett. 77, 1988 (2000)APPLAB000077000013001988000001.


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