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17 Jun 2002

Volume 80, Issue 24, pp. 4483-4665

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Rotors produced and driven in laser tweezers with reversed direction of rotation

Péter Galajda and Pál Ormos

Appl. Phys. Lett. 80, 4653 (2002); http://dx.doi.org/10.1063/1.1480885 (3 pages) | Cited 36 times

Online Publication Date: 10 June 2002

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Micrometer size rotors are produced by light induced polymerization of light curing resin. The propeller shaped rotors trapped in laser tweezers are rotated by the trapping light. A rotor is built that changes the direction of rotation by changing its position relative to the focus. The design is based on the very high numerical aperture of the focused light in the tweezers: the light has a large average component of momentum pointing perpendicular to the optical axis, in the opposite direction before and behind the focus. This perpendicular component drives the rotation and the direction changes when the rotor is moving around the focus. © 2002 American Institute of Physics.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
78.20.Fm Birefringence
78.20.Ek Optical activity
42.25.Ja Polarization
82.35.Ej Nonlinear optics with polymers

Flat panel imagers with pixel level amplifiers based on polycrystalline silicon thin-film transistor technology

J. P. Lu, K. Van Schuylenbergh, J. Ho, Y. Wang, J. B. Boyce, and R. A. Street

Appl. Phys. Lett. 80, 4656 (2002); http://dx.doi.org/10.1063/1.1481788 (3 pages) | Cited 14 times

Online Publication Date: 10 June 2002

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We report here the realization of a large-area compatible, flat panel imager with pixel level amplifiers. The imager is based on excimer-laser crystallized, polycrystalline silicon (poly-Si) thin-film transistors. By incorporating pixel level amplification, flat panel imagers are expected to be able to achieve unprecedented noise performance, with the hope of achieving single photon detection. We have demonstrated good noise performance of 1300 erms, exceeding the commonly accepted industry standard of 2000 erms. We also briefly discuss the source of the extra noise, as well as the possibility of further reducing the noise level. © 2002 American Institute of Physics.
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07.85.-m X- and γ-ray instruments
85.30.Tv Field effect devices

Improvement of hole injection in phenyl-substituted electroluminescent devices by reduction of oxygen deficiency near the indium tin oxide surface

Beeling Low, Furong Zhu, Keran Zhang, and Soojin Chua

Appl. Phys. Lett. 80, 4659 (2002); http://dx.doi.org/10.1063/1.1484544 (3 pages) | Cited 21 times

Online Publication Date: 10 June 2002

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We report the use of an in situ four-point probe method to investigate the relation between oxygen plasma treatment on indium tin oxide (ITO) and the variation in its sheet resistance. Analyses on the ITO surface composition made with time-of-flight secondary ion mass spectroscopy probe a dual-layer parallel resistor model for oxygen plasma-treated ITO anodes. We have shown that the increase in the ITO sheet resistance can be attributed to the reduction of oxygen deficiency near the surface. The improvement in carrier injection in phenyl-substituted poly(p-phenylenevinylene)-based light-emitting diodes correlates directly with a layer of low conductivity, several nanometers thick. This was induced on the ITO surface and serves as an efficient hole injecting anode. © 2002 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
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