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17 Jun 2002

Volume 80, Issue 24, pp. 4483-4665

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Laser diode structure for the generation of high-power picosecond optical pulses

Sergey Vainshtein, Juha Kostamovaara, Larisa Shestak, Mikhail Sverdlov, and Vladimir Tretyakov

Appl. Phys. Lett. 80, 4483 (2002); http://dx.doi.org/10.1063/1.1486478 (3 pages) | Cited 6 times

Online Publication Date: 10 June 2002

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A laser diode structure is designed and tested that permits the generation of high-power ( ∼ 100 W) picosecond-range optical pulses. Direct current pumping is used with a current pulse duration of a few nanoseconds and a current amplitude of ∼ 105 A/cm2. The main distinguishing feature of the structure is separation of the electron injector (p–n junction) from the active region by a potential barrier. The optical gain in the active region is controlled by the transverse electric field, which is determined by the magnitude of the current at each instant. The design allows emission wavelength control by means of band gap engineering. © 2002 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Dye-doped polymers for blue organic diode lasers

María A. Díaz-García, Susana Fernández De Ávila, and Mark G. Kuzyk

Appl. Phys. Lett. 80, 4486 (2002); http://dx.doi.org/10.1063/1.1485303 (3 pages) | Cited 17 times

Online Publication Date: 10 June 2002

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Amplified spontaneous emission (ASE) in optically pumped polymeric films containing the luminescent and hole-transporting organic molecule N,N′-Bis(3-methylphenyl)-N,N′diphenylbenzidine (TPD) is demonstrated. ASE is observed in polymer films of polystyrene and poly(N-vinylcarbazole) doped up to 20% with TPD. From these results, we conclude that TPD-based films are candidates for blue-emitting organic diode lasers. © 2002 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Qn Polymers; organic compounds
78.45.+h Stimulated emission
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

On-chain defect emission in electroluminescent polyfluorenes

J. M. Lupton, M. R. Craig, and E. W. Meijer

Appl. Phys. Lett. 80, 4489 (2002); http://dx.doi.org/10.1063/1.1486482 (3 pages) | Cited 93 times

Online Publication Date: 10 June 2002

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We present time-resolved photoluminescence measurements on a range of poly- and oligofluorenes with different molecular weights in both dilute solution and thin films. The commonly observed parasitic broad green emission band, which has previously been attributed to an excimer, is identified in all solution and film samples and assigned to an on-chain emissive defect. By comparison of the luminescence decay in the solid state at different temperatures it is shown that, at room temperature, intramolecular relaxation is faster in these polyphenylenes than intermolecular exciton diffusion. © 2002 American Institute of Physics.
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78.55.Kz Solid organic materials
78.55.Bq Liquids
71.55.Jv Disordered structures; amorphous and glassy solids
36.20.Cw Molecular weights, dispersity
78.60.Fi Electroluminescence
36.20.Kd Electronic structure and spectra
78.47.-p Spectroscopy of solid state dynamics
78.66.Qn Polymers; organic compounds

Parametric fluorescence in periodically poled LiNbO3 buried waveguides

Katia Gallo, Marc De Micheli, and Pascal Baldi

Appl. Phys. Lett. 80, 4492 (2002); http://dx.doi.org/10.1063/1.1486265 (3 pages) | Cited 11 times

Online Publication Date: 10 June 2002

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We report on the periodic poling of LiNbO3 buried waveguides fabricated by reverse proton exchange. We evaluate their linear and nonlinear quadratic properties with the aid of parametric fluorescence. © 2002 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.65.Wi Nonlinear waveguides
81.05.Mh Cermets, ceramic and refractory composites
78.55.Hx Other solid inorganic materials
78.60.-b Other luminescence and radiative recombination
77.22.Ej Polarization and depolarization

Photonic band schemes of opals composed of periodic arrays of cored spheres depending on thickness of outer shells

Hiroyuki Takeda and Katsumi Yoshino

Appl. Phys. Lett. 80, 4495 (2002); http://dx.doi.org/10.1063/1.1487448 (3 pages) | Cited 11 times

Online Publication Date: 10 June 2002

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Photonic band schemes of opals as pseudophotonic crystals composed of three-dimensional arrays of cored spheres are calculated theoretically. Pseudophotonic band gaps are confirmed to be dependent on the thickness of outer shells and also refractive indices of the inner core and outer shells. Tunabilities of photonic band schemes of these types of opals are also discussed. © 2002 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Ps Other inorganic compounds

Tunable photonic strength in porous GaP

J. Gómez Rivas, A. Lagendijk, R. W. Tjerkstra, D. Vanmaekelbergh, and J. J. Kelly

Appl. Phys. Lett. 80, 4498 (2002); http://dx.doi.org/10.1063/1.1485316 (3 pages) | Cited 20 times

Online Publication Date: 10 June 2002

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The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications. © 2002 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
81.05.Rm Porous materials; granular materials
81.65.Cf Surface cleaning, etching, patterning
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