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24 Jun 2002

Volume 80, Issue 25, pp. 4687-4873

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Comment on “Thermal annealing effect on the intersublevel transitions in InAs quantum dots” [Appl. Phys. Lett. 78, 2196 (2001)]

P. J. Poole and G. C. Aers

Appl. Phys. Lett. 80, 4867 (2002); http://dx.doi.org/10.1063/1.1489487 (2 pages) | Cited 6 times

Online Publication Date: 17 June 2002

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Abstract Unavailable
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
73.21.La Quantum dots
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing
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Response to “Comment on ‘Thermal annealing effect on the intersublevel transitions in InAs quantum dots’ ” [Appl. Phys. Lett. 80, 4867 (2002)]

Y. Berhane, M. O. Manasreh, H. Yang, and G. J. Salamo

Appl. Phys. Lett. 80, 4869 (2002); http://dx.doi.org/10.1063/1.1489488 (2 pages) | Cited 1 time

Online Publication Date: 17 June 2002

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
73.21.La Quantum dots
61.72.Cc Kinetics of defect formation and annealing
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