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24 Jun 2002

Volume 80, Issue 25, pp. 4687-4873

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Dopant extraction from scanning capacitance microscopy measurements of p-n junctions using combined inverse modeling and forward simulation

W. K. Chim, K. M. Wong, Y. L. Teo, Y. Lei, and Y. T. Yeow

Appl. Phys. Lett. 80, 4837 (2002); http://dx.doi.org/10.1063/1.1487899 (3 pages) | Cited 5 times

Online Publication Date: 17 June 2002

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This article proposes a more accurate approach to dopant extraction using combined inverse modeling and forward simulation of scanning capacitance microscopy (SCM) measurements on p-n junctions. The approach takes into account the essential physics of minority carrier response to the SCM probe tip in the presence of lateral electric fields due to a p-n junction. The effects of oxide fixed charge and interface state densities in the grown oxide layer on the p-n junction samples were considered in the proposed method. The extracted metallurgical and electrical junctions were compared to the apparent electrical junction obtained from SCM measurements. © 2002 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.S- Impurities in crystals
85.30.De Semiconductor-device characterization, design, and modeling
81.65.Mq Oxidation
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Schottky energy barrier and charge injection in metal/copper–phthalocyanine/metal structures

Ajit Kumar Mahapatro and Subhasis Ghosh

Appl. Phys. Lett. 80, 4840 (2002); http://dx.doi.org/10.1063/1.1483388 (3 pages) | Cited 29 times

Online Publication Date: 17 June 2002

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We present experimental results on current injection from different metal electrodes into copper–phthalocyanine (Cu–Pc). The current–voltage (J–V) characteristics and current injected at the contact are investigated as a function of Schottky energy barrier, thickness of organic semiconductor, and temperature. These results are interpreted using a consistent description of J–V characteristics through the injection limited current in the case of high Schottky energy barriers and space charge limited current in the case of low Schottky energy barrier. © 2002 American Institute of Physics.
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73.40.Sx Metal-semiconductor-metal structures
73.61.Ph Polymers; organic compounds
73.30.+y Surface double layers, Schottky barriers, and work functions

Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

Hee Joon Kim, Gyuseong Cho, Joonhoo Choi, and Kwan-Wook Jung

Appl. Phys. Lett. 80, 4843 (2002); http://dx.doi.org/10.1063/1.1489485 (3 pages) | Cited 3 times

Online Publication Date: 17 June 2002

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In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cm×40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2–3 pA/mm2 at −5 V. This high current originates from the high injection current at the p-i junction. © 2002 American Institute of Physics.
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85.30.Kk Junction diodes
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

In situ photoluminescence investigation of doped Alq

G. Y. Zhong, J. He, S. T. Zhang, Z. Xu, Z. H. Xiong, H. Z. Shi, X. M. Ding, W. Huang, and X. Y. Hou

Appl. Phys. Lett. 80, 4846 (2002); http://dx.doi.org/10.1063/1.1489083 (3 pages) | Cited 21 times

Online Publication Date: 17 June 2002

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We report the photoluminescence (PL) properties measured in situ from vacuum-deposited organic films of tris-(8-hydroxyquinoline) aluminum (Alq) doped with 4-(dicyanomethylene)-2-methyl-6(p-dimethylaminostyryl)-4H-pyran (DCM), where the red emission from the guest molecules is due to Förster energy transfer of excited state energy from host to guest. Both bare DCM-doped Alq (Alq:DCM) and bilayer Alq/Alq:DCM films have been studied, with the thickness of the Alq overlayer continuously varied in the latter case. The PL spectra from the bilayer structure contain no Alq contribution when its thickness is below 2.4 nm. Taking the value as the maximum distance for which the Alq exciton can travel in the film and still transfer its energy to a DCM molecule, the minimum DCM concentration in Alq:DCM necessary to produce red emission only can be estimated at 0.31 wt %. The most efficient red emission appears at the DCM concentration of about 1.7 wt %, at which more than 90% Alq-originated excitons are involved in the Förster energy transfer process. There exists a gradual red shift of the PL spectra with increasing DCM concentration, which can be attributed to the polarization and accompanying aggregation tendency of DCM molecules in Alq during the formation of the doped films. © 2002 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Sensitivity of a platinum-polyyne-based sensor to low relative humidity and chemical vapors

Cinzia Caliendo, Ilaria Fratoddi, and Maria Vittoria Russo

Appl. Phys. Lett. 80, 4849 (2002); http://dx.doi.org/10.1063/1.1489095 (3 pages) | Cited 27 times

Online Publication Date: 17 June 2002

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The sensitivity to relative humidity (RH) variations in the range 0%–90% of a platinum polyyne, namely poly-[1,4-dihexadecyloxy-2,5-diethynylbenzene-bis(triphenylphosphine) platinum(II)] (Pt-P-HDOB) membrane was investigated by means of a surface acoustic wave (SAW) based sensor. A thin film of polymeric membrane was spin deposited on the free surface of the device and the resulting acoustic velocity and attenuation perturbations allowed the acoustic characterization of the membrane by means of the perturbation theory. The SAW sensor was able to reveal even very low (<10% RH) humidity conditions at room temperature, with high reproducibility, repeatability and stability. © 2002 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.07.Vx Hygrometers; hygrometry
68.35.Iv Acoustical properties

Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes

P. O. Å. Persson, L. Hultman, H. Jacobson, J. P. Bergman, E. Janzén, J. M. Molina-Aldareguia, W. J. Clegg, and T. Tuomi

Appl. Phys. Lett. 80, 4852 (2002); http://dx.doi.org/10.1063/1.1487904 (3 pages) | Cited 25 times

Online Publication Date: 17 June 2002

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Triangular structural defects are occasionally generated during the long-term operation of 4H-SiC pin diodes and degrade the forward characteristics of the diode. We have used synchrotron white beam x-ray topography, scanning electron microscopy, in situ cathodo luminescence, and transmission electron microscopy to characterize the structure and formation of these defects. It is shown that the defects are stacking faults on the (0001) basal planes, bound by partial dislocations with Burgers vectors 1/3〈10math0〉 and 1/3〈01math0〉. These partials are suggested to form by the dissociation of existing dislocations. © 2002 American Institute of Physics.
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85.30.Kk Junction diodes
61.72.Nn Stacking faults and other planar or extended defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Yz X-ray microscopy
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
78.60.Hk Cathodoluminescence, ionoluminescence
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