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24 Jun 2002

Volume 80, Issue 25, pp. 4687-4873

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Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon

B. T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, J. Lettieri, J. H. Haeni, D. G. Schlom, W. Tian, X. Q. Pan, F. J. Walker, and R. A. McKee

Appl. Phys. Lett. 80, 4801 (2002); http://dx.doi.org/10.1063/1.1484552 (3 pages) | Cited 32 times

Online Publication Date: 17 June 2002

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Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1−xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed {001}-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450 °C) sol–gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics.
Show PACS
85.50.Gk Non-volatile ferroelectric memories
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Unusual size effect on the polarization patterns in micron-size Pb(Zr,Ti)O3 film capacitors

Igor Stolichnov, Enrico Colla, Alexander Tagantsev, S. S. N. Bharadwaja, Seungbum Hong, Nava Setter, Jeffrey S. Cross, and Mineharu Tsukada

Appl. Phys. Lett. 80, 4804 (2002); http://dx.doi.org/10.1063/1.1489478 (3 pages) | Cited 31 times

Online Publication Date: 17 June 2002

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Direct observation of polarization distribution at nanoscale by scanning force microscopy across partially etched Pb(Zr,Ti)O3 film ferroelectric capacitors with size 2×3 μm and preferential orientation (111) has revealed an anomalous polarization pattern characterized by polarization inversion in the center of the capacitor. This self-structured pattern is reproducible and independent on the spontaneous polarization orientation, but strongly influenced by the film texture and capacitor size. In particular, capacitors of the same texture with size 0.5×0.5 μm as well as capacitors with (100) preferential orientation of any size did not exhibit such anomalous polarization distribution. A tentative explanation consistent with the essential features of the observed polarization behavior in terms of strain-induced phase transition is discussed. © 2002 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.55.-a Thin film structure and morphology
77.80.B- Phase transitions and Curie point

Low-temperature dielectric relaxation in the pyrochlore (Bi3/4Zn1/4)2(Zn1/4Ta3/4)2O7 compound

Chen Ang, Zhi Yu, H. J. Youn, C. A. Randall, A. S. Bhalla, L. E. Cross, J. Nino, and M. Lanagan

Appl. Phys. Lett. 80, 4807 (2002); http://dx.doi.org/10.1063/1.1486045 (3 pages) | Cited 19 times

Online Publication Date: 17 June 2002

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The dielectric behavior of the pyrochlore (Bi3/4Zn1/4)2(Zn1/4Ta3/4)2O7 compound has been studied. A low-temperature dielectric relaxation was observed in a low-permittivity matrix with ε = ∼ 60. The dielectric relaxation process follows a modified Debye model in the vicinity of the relaxation peak, and the relaxation rate follows the Arrhenius law in the wide frequency range 102 to ∼ 1010 Hz. The temperature intensity of dielectric peaks are independent of dc bias (⩽60 kV/cm). The dielectric relaxation is tentatively attributed to the hopping of Zn/Bi ions at A sites with more than one equivalent potential minima, and the reorientation of the dipoles probably formed through interactions with the “seventh oxygen” and the Bi/Zn A-site ions in the pyrochlore (Bi3/4Zn1/4)2(Zn1/4Ta3/4)2O7 compound. © 2002 American Institute of Physics.
Show PACS
77.22.Gm Dielectric loss and relaxation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity
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