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24 Jun 2002

Volume 80, Issue 25, pp. 4687-4873

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Spectral-dependent cross-section determination for singlet excited states using z scan

Yuhua Huang, Yizhong Yuan, Jingxin Ding, Zhenrong Sun, and Heping Zeng

Appl. Phys. Lett. 80, 4855 (2002); http://dx.doi.org/10.1063/1.1489707 (3 pages) | Cited 5 times

Online Publication Date: 17 June 2002

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We report a method to determine the spectral-dependent cross section of the first excited singlet state (S1) of dye molecules in solution. The method is based on the z-scan technique and requires the duration of the excitation laser pulses much shorter than the interband relaxation of S1 of the dye molecule. The method was used to determine the cross-section spectra of the first singlet excited state of an indoletricarboncyanine dye using 35 ps laser pulses. © 2002 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors

Sufi Zafar, Cyril Cabral, R. Amos, and A. Callegari

Appl. Phys. Lett. 80, 4858 (2002); http://dx.doi.org/10.1063/1.1489098 (3 pages) | Cited 25 times

Online Publication Date: 17 June 2002

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A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors. © 2002 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states

Comparison of electromagnetic scattering measurements to simulation for microelectronic structures

David P. Paul, Edward W. Conrad, Daniel C. Cole, and Eytan Barouch

Appl. Phys. Lett. 80, 4861 (2002); http://dx.doi.org/10.1063/1.1489708 (3 pages) | Cited 2 times

Online Publication Date: 17 June 2002

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We present an electromagnetic-based method that enables prediction of microlithographic structures of 100 nm and below, for analyzing manufacturability of next-generation microchip technology in real time, in situ. The method is robust, versatile, precise, and fast, and experimentally verified by using both scanning electron microscopy and atomic force microscopy. © 2002 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
87.64.Cc Scattering of visible, uv, and infrared radiation
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

A variable-emittance radiator based on a metal–insulator transition of (La,Sr)MnO3 thin films

Y. Shimakawa, T. Yoshitake, Y. Kubo, T. Machida, K. Shinagawa, A. Okamoto, Y. Nakamura, A. Ochi, S. Tachikawa, and A. Ohnishi

Appl. Phys. Lett. 80, 4864 (2002); http://dx.doi.org/10.1063/1.1489079 (3 pages) | Cited 15 times

Online Publication Date: 17 June 2002

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Variable-emittance radiators based on the metal–insulator transition of (La,Sr)MnO3 thin films have been developed. The emittance property of the films was evaluated from infrared reflectance spectra; that is, the (La,Sr)MnO3 thin films show low emittance at low temperature but high emittance at high temperature. Moreover, the emittance property significantly changes at the metal–insulator transition temperature, where the material changes from a highly reflective (i.e., low emissive) metal to a less reflective (i.e., high emissive) insulator. The (La,Sr)MnO3 thin films fitted on a spacecraft surface can, therefore, be used to automatically control the emissive heat transfer from the spacecraft without the need for any electrical power. The developed radiators also greatly reduce the weight and production cost of the thermal control devices. The dependence of the emittance property on film thickness reveals that 1500-nm-thick films can be used for variable-emittance radiators. © 2002 American Institute of Physics.
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07.20.-n Thermal instruments and apparatus
71.30.+h Metal-insulator transitions and other electronic transitions
78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics
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