APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

24 Jun 2002

Volume 80, Issue 25, pp. 4687-4873

Return to All Sections
back to top
RSS Feeds

Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range

A. Verevkin, J. Zhang, Roman Sobolewski, A. Lipatov, O. Okunev, G. Chulkova, A. Korneev, K. Smirnov, G. N. Gol’tsman, and A. Semenov

Appl. Phys. Lett. 80, 4687 (2002); http://dx.doi.org/10.1063/1.1487924 (3 pages) | Cited 103 times

Online Publication Date: 17 June 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications. © 2002 American Institute of Physics.
Show PACS
85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
74.40.-n Fluctuation phenomena
74.78.-w Superconducting films and low-dimensional structures
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)

Third order mode optically pumped semiconductor laser

A. De Rossi, N. Semaltianos, E. Chirlias, B. Vinter, V. Ortiz, and V. Berger

Appl. Phys. Lett. 80, 4690 (2002); http://dx.doi.org/10.1063/1.1482799 (3 pages) | Cited 9 times

Online Publication Date: 17 June 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lasing action on a third order waveguide mode is demonstrated at room temperature under optical pumping, in a specifically designed quantum well laser structure. The AlGaAs heterostructure involves barriers which ensure that the third order waveguide mode has a higher overlap with the single quantum well emitter than the fundamental mode. Third order mode operation of a laser structure opens the way to modal phase matched parametric down conversion inside the semiconductor laser itself. It is a first step towards the realization of semiconductor twin photon laser sources, needed for quantum information experiments. © 2002 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.65.Yj Optical parametric oscillators and amplifiers
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.De Quantum wells
73.21.Fg Quantum wells

Laser-induced surface patterning by means of microspheres

K. Piglmayer, R. Denk, and D. Bäuerle

Appl. Phys. Lett. 80, 4693 (2002); http://dx.doi.org/10.1063/1.1489085 (3 pages) | Cited 46 times

Online Publication Date: 17 June 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A regular lattice of SiO2 microspheres on a quartz support is used as a microlens array for laser-induced surface patterning of polyimide foils. © 2002 American Institute of Physics.
Show PACS
42.62.Cf Industrial applications
81.65.Ps Polishing, grinding, surface finishing
42.79.Bh Lenses, prisms and mirrors
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

A. V. Gopal, H. Yoshida, T. Simoyama, N. Georgiev, T. Mozume, and H. Ishikawa

Appl. Phys. Lett. 80, 4696 (2002); http://dx.doi.org/10.1063/1.1489479 (3 pages) | Cited 12 times

Online Publication Date: 17 June 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report 1.35 μm intersubband absorption, in InGaAs/AlAsSb multiquantum wells, obtained by introducing a one monolayer AlAs layer at the well-barrier interface. The observed peak covers the useful communication wavelength range of 1.2–1.6 μm. Polarization-resolved, room-temperature absorption spectra and 77 K photoluminescence spectra measured on a series of samples reveal this short wavelength intersubband absorption peak ( ≈ 1.35 μm) in 7 and 9 monolayer wells that are doped in the well region to a density ⩽ 2×1018 cm−3. For heavier doping and in narrower wells, we do not observe this transition. © 2002 American Institute of Physics.
Show PACS
78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors

Polarization-sensitive photoconductivity in aligned polyfluorene layers

A. Zen, D. Neher, C. Bauer, U. Asawapirom, U. Scherf, R. Hagen, S. Kostromine, and R. F. Mahrt

Appl. Phys. Lett. 80, 4699 (2002); http://dx.doi.org/10.1063/1.1489482 (3 pages) | Cited 12 times

Online Publication Date: 17 June 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Polarization-sensitive photodiodes have been constructed utilizing an aligned polyfluorene layer oriented on a photoaligned liquid crystalline photoaddressable polymer. The diodes exhibit a pronounced dependence of the photocurrent on the polarization of the incident light, yielding a polarization sensitivity of more than a factor of 10 at the onset of the absorption. The action spectrum is symbatic for light polarized perpendicular to the polymer alignment direction whereas it does not simply correlate with the absorption characteristics for parallel polarized light. The data can be explained utilizing Ghosh’s model taking into account interference effects within the polyfluorene layer. © 2002 American Institute of Physics.
Show PACS
73.61.Ph Polymers; organic compounds
73.50.Pz Photoconduction and photovoltaic effects
78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
42.70.Jk Polymers and organics

Three-dimensional dielectric photonic crystals of body-centered-tetragonal lattice structure

R. Tao and D. Xiao

Appl. Phys. Lett. 80, 4702 (2002); http://dx.doi.org/10.1063/1.1488691 (3 pages) | Cited 13 times

Online Publication Date: 17 June 2002

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Numerical calculation has been carried out for three-dimensional (3D) dielectric photonic crystals of body-centered-tetragonal (bct) lattice structure, which can be produced by utilizing the electrorheological and magnetorheological effect. The calculation shows that there is a complete band gap between the fifth band and the sixth band if the ratio of the dielectric constant of the host medium ϵh to the dielectric constant of the spheres ϵa is high enough, ϵh/ϵa>15.7. Therefore, 3D bct dielectric photonic crystals will be suitable for various optical applications. © 2002 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close